JPS4894378A - - Google Patents

Info

Publication number
JPS4894378A
JPS4894378A JP47025644A JP2564472A JPS4894378A JP S4894378 A JPS4894378 A JP S4894378A JP 47025644 A JP47025644 A JP 47025644A JP 2564472 A JP2564472 A JP 2564472A JP S4894378 A JPS4894378 A JP S4894378A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47025644A
Other languages
Japanese (ja)
Other versions
JPS5321275B2 (enrdf_load_html_response
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2564472A priority Critical patent/JPS5321275B2/ja
Priority to NL7303449.A priority patent/NL159536B/xx
Priority to GB1184073A priority patent/GB1419695A/en
Priority to DE2312162A priority patent/DE2312162C3/de
Publication of JPS4894378A publication Critical patent/JPS4894378A/ja
Priority to US05/612,103 priority patent/US4142160A/en
Publication of JPS5321275B2 publication Critical patent/JPS5321275B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
JP2564472A 1972-03-13 1972-03-13 Expired JPS5321275B2 (enrdf_load_html_response)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2564472A JPS5321275B2 (enrdf_load_html_response) 1972-03-13 1972-03-13
NL7303449.A NL159536B (nl) 1972-03-13 1973-03-12 Halfgeleiderlaser en werkwijze voor het vervaardigen daarvan.
GB1184073A GB1419695A (enrdf_load_html_response) 1972-03-13 1973-03-12
DE2312162A DE2312162C3 (de) 1972-03-13 1973-03-12 Halbleiterlaserplättchen und Verfahren zu seiner Herstellung
US05/612,103 US4142160A (en) 1972-03-13 1975-09-10 Hetero-structure injection laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2564472A JPS5321275B2 (enrdf_load_html_response) 1972-03-13 1972-03-13

Publications (2)

Publication Number Publication Date
JPS4894378A true JPS4894378A (enrdf_load_html_response) 1973-12-05
JPS5321275B2 JPS5321275B2 (enrdf_load_html_response) 1978-07-01

Family

ID=12171529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2564472A Expired JPS5321275B2 (enrdf_load_html_response) 1972-03-13 1972-03-13

Country Status (4)

Country Link
JP (1) JPS5321275B2 (enrdf_load_html_response)
DE (1) DE2312162C3 (enrdf_load_html_response)
GB (1) GB1419695A (enrdf_load_html_response)
NL (1) NL159536B (enrdf_load_html_response)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51104287A (ja) * 1975-03-12 1976-09-14 Hitachi Ltd Handotaireezasochi
JPS5215280A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Cleavage semiconductor laser equipped with side surface light take-out waveguide
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS5842283A (ja) * 1981-09-04 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> 埋込み型半導体レ−ザの製法
JPS62157339A (ja) * 1986-11-28 1987-07-13 Hitachi Ltd 情報再生装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
NL176323C (nl) * 1975-03-11 1985-03-18 Philips Nv Halfgeleiderinrichting voor het opwekken van incoherente straling.
DE2760112C2 (enrdf_load_html_response) * 1976-07-02 1989-05-18 N.V. Philips' Gloeilampenfabrieken, Eindhoven, Nl
NL7607299A (nl) * 1976-07-02 1978-01-04 Philips Nv Injektielaser.
US4328508A (en) 1979-04-02 1982-05-04 Rca Corporation III-V Quaternary alloy photodiode
US5250471A (en) * 1988-12-26 1993-10-05 The Furukawa Electric Co. Method for manufacturing compound semiconductor devices including a step where the semiconductor is etched without exposure to light
US5359619A (en) * 1992-02-20 1994-10-25 Sumitomo Electric Industries, Ltd. Multi-beam semiconductor laser and method for producing the same
JP4189610B2 (ja) * 1998-05-08 2008-12-03 ソニー株式会社 光電変換素子およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51104287A (ja) * 1975-03-12 1976-09-14 Hitachi Ltd Handotaireezasochi
JPS5215280A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Cleavage semiconductor laser equipped with side surface light take-out waveguide
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS5842283A (ja) * 1981-09-04 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> 埋込み型半導体レ−ザの製法
JPS62157339A (ja) * 1986-11-28 1987-07-13 Hitachi Ltd 情報再生装置

Also Published As

Publication number Publication date
NL159536B (nl) 1979-02-15
JPS5321275B2 (enrdf_load_html_response) 1978-07-01
GB1419695A (enrdf_load_html_response) 1975-12-31
DE2312162C3 (de) 1978-03-09
NL7303449A (enrdf_load_html_response) 1973-09-17
DE2312162A1 (de) 1973-10-04
DE2312162B2 (de) 1977-07-14

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