GB1417484A - Semiconductor device and method of making the same - Google Patents

Semiconductor device and method of making the same

Info

Publication number
GB1417484A
GB1417484A GB110773A GB110773A GB1417484A GB 1417484 A GB1417484 A GB 1417484A GB 110773 A GB110773 A GB 110773A GB 110773 A GB110773 A GB 110773A GB 1417484 A GB1417484 A GB 1417484A
Authority
GB
United Kingdom
Prior art keywords
arsenide
epitaxial
layer
gallium
aluminium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB110773A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1417484A publication Critical patent/GB1417484A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02466—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02477—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
GB110773A 1972-01-10 1973-01-09 Semiconductor device and method of making the same Expired GB1417484A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21637672A 1972-01-10 1972-01-10

Publications (1)

Publication Number Publication Date
GB1417484A true GB1417484A (en) 1975-12-10

Family

ID=22806816

Family Applications (1)

Application Number Title Priority Date Filing Date
GB110773A Expired GB1417484A (en) 1972-01-10 1973-01-09 Semiconductor device and method of making the same

Country Status (10)

Country Link
JP (1) JPS5228634B2 (cs)
AU (1) AU466927B2 (cs)
BE (1) BE793800A (cs)
CA (1) CA973976A (cs)
DE (1) DE2300921A1 (cs)
FR (1) FR2167831B1 (cs)
GB (1) GB1417484A (cs)
IT (1) IT978097B (cs)
NL (1) NL7300350A (cs)
SE (1) SE387473B (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215514A (en) * 1988-03-04 1989-09-20 Plessey Co Plc Terminating dislocations in semiconductor epitaxial layers
GB2234633A (en) * 1989-07-10 1991-02-06 Sharp Kk Electroluminescent device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264272A (en) * 1975-11-22 1977-05-27 Fujitsu Ltd Semiconductor crystal
CA1256590A (en) * 1985-03-15 1989-06-27 Yuichi Matsui Compound semiconductor device with layers having different lattice constants

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493811A (en) * 1966-06-22 1970-02-03 Hewlett Packard Co Epitaxial semiconductor material on dissimilar substrate and method for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215514A (en) * 1988-03-04 1989-09-20 Plessey Co Plc Terminating dislocations in semiconductor epitaxial layers
GB2234633A (en) * 1989-07-10 1991-02-06 Sharp Kk Electroluminescent device
GB2234633B (en) * 1989-07-10 1993-02-24 Sharp Kk Electroluminescent device of compound semiconductor

Also Published As

Publication number Publication date
NL7300350A (cs) 1973-07-12
FR2167831A1 (cs) 1973-08-24
DE2300921A1 (de) 1973-07-19
JPS5228634B2 (cs) 1977-07-27
SE387473B (sv) 1976-09-06
AU5094273A (en) 1974-07-11
IT978097B (it) 1974-09-20
BE793800A (fr) 1973-05-02
JPS504977A (cs) 1975-01-20
AU466927B2 (en) 1975-11-13
CA973976A (en) 1975-09-02
FR2167831B1 (cs) 1977-12-30

Similar Documents

Publication Publication Date Title
GB1283793A (en) Depositing successive epitaxial semiconductive layers from the liquid phase
GB1457585A (en) Semiconductor superlattice crystals
US3433684A (en) Multilayer semiconductor heteroepitaxial structure
GB1378327A (en) Iii-v compound on insulating substrate
GB1320773A (en) Method for forming epitaxial crystals or wafers in selected regions of substraes
GB1414254A (en) Epitaxial growth of semiconductor material from the liquid phase
BE791927A (fr) Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs
GB1282167A (en) Process for vapour growing thin films
GB1299237A (en) Composite structure of zinc oxide deposited epitaxially on sapphire
IE39656L (en) Semiconductors
GB1288940A (cs)
GB1368315A (en) Method for producing semiconductor on-insulator electronic devices
GB1417484A (en) Semiconductor device and method of making the same
GB1176691A (en) High Resistivity Compounds and Alloys and Methods of Making Same.
GB1016723A (en) Piezoelectric transducers and devices using them
GB1355852A (en) Growing semiconductor crystals
US4314873A (en) Method for depositing heteroepitaxially InP on GaAs semi-insulating substrates
FR2369685A1 (fr) Procede de production de couches de silicium cristallin sur un substrat et produits ainsi obtenus
GB1441851A (en) Method of depositing epitaxial layers on a substrate from the liquid phase
GB1370292A (en) Method for growing crystals
GB1393337A (en) Method of growing a single crystal film
GB1457962A (en) Method of epitaxially depositing a semi-conductor material on a substrate
US5595960A (en) Method of depositing a superconductor layer on a substrate through an intermediate layer of doped CeO2
JPS5710223A (en) Semiconductor device
NL6913797A (cs)

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee