NL7300350A - - Google Patents

Info

Publication number
NL7300350A
NL7300350A NL7300350A NL7300350A NL7300350A NL 7300350 A NL7300350 A NL 7300350A NL 7300350 A NL7300350 A NL 7300350A NL 7300350 A NL7300350 A NL 7300350A NL 7300350 A NL7300350 A NL 7300350A
Authority
NL
Netherlands
Application number
NL7300350A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7300350A publication Critical patent/NL7300350A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/0242Crystalline insulating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02463Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02466Antimonides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02469Group 12/16 materials
    • H01L21/02477Selenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02549Antimonides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
NL7300350A 1972-01-10 1973-01-10 NL7300350A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21637672A 1972-01-10 1972-01-10

Publications (1)

Publication Number Publication Date
NL7300350A true NL7300350A (cs) 1973-07-12

Family

ID=22806816

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7300350A NL7300350A (cs) 1972-01-10 1973-01-10

Country Status (10)

Country Link
JP (1) JPS5228634B2 (cs)
AU (1) AU466927B2 (cs)
BE (1) BE793800A (cs)
CA (1) CA973976A (cs)
DE (1) DE2300921A1 (cs)
FR (1) FR2167831B1 (cs)
GB (1) GB1417484A (cs)
IT (1) IT978097B (cs)
NL (1) NL7300350A (cs)
SE (1) SE387473B (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264272A (en) * 1975-11-22 1977-05-27 Fujitsu Ltd Semiconductor crystal
CA1256590A (en) * 1985-03-15 1989-06-27 Yuichi Matsui Compound semiconductor device with layers having different lattice constants
GB2215514A (en) * 1988-03-04 1989-09-20 Plessey Co Plc Terminating dislocations in semiconductor epitaxial layers
JP2588280B2 (ja) * 1989-07-10 1997-03-05 シャープ株式会社 化合物半導体発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493811A (en) * 1966-06-22 1970-02-03 Hewlett Packard Co Epitaxial semiconductor material on dissimilar substrate and method for producing the same

Also Published As

Publication number Publication date
CA973976A (en) 1975-09-02
DE2300921A1 (de) 1973-07-19
IT978097B (it) 1974-09-20
AU5094273A (en) 1974-07-11
BE793800A (fr) 1973-05-02
AU466927B2 (en) 1975-11-13
JPS5228634B2 (cs) 1977-07-27
FR2167831B1 (cs) 1977-12-30
JPS504977A (cs) 1975-01-20
GB1417484A (en) 1975-12-10
FR2167831A1 (cs) 1973-08-24
SE387473B (sv) 1976-09-06

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