GB1410728A - Etching methods to their application and to devices produced thereby - Google Patents
Etching methods to their application and to devices produced therebyInfo
- Publication number
- GB1410728A GB1410728A GB5435573A GB5435573A GB1410728A GB 1410728 A GB1410728 A GB 1410728A GB 5435573 A GB5435573 A GB 5435573A GB 5435573 A GB5435573 A GB 5435573A GB 1410728 A GB1410728 A GB 1410728A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- metal
- plasma
- nov
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11746472A JPS5441870B2 (https=) | 1972-11-22 | 1972-11-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1410728A true GB1410728A (en) | 1975-10-22 |
Family
ID=14712315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5435573A Expired GB1410728A (en) | 1972-11-22 | 1973-11-22 | Etching methods to their application and to devices produced thereby |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5441870B2 (https=) |
| DE (1) | DE2357913B2 (https=) |
| FR (1) | FR2208191B1 (https=) |
| GB (1) | GB1410728A (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5127833A (ja) * | 1974-09-02 | 1976-03-09 | Nippon Telegraph & Telephone | Chitaniumunoshokukokuhoho |
| JPS5190274A (en) * | 1975-02-05 | 1976-08-07 | Fuotomasukuno seizohoho | |
| US3994793A (en) * | 1975-05-22 | 1976-11-30 | International Business Machines Corporation | Reactive ion etching of aluminum |
| JPS5287985A (en) * | 1976-01-19 | 1977-07-22 | Mitsubishi Electric Corp | Plasma etching method |
| JPS5325244A (en) * | 1976-08-20 | 1978-03-08 | Nichiden Varian Kk | Method of plasma etching molybdenum |
| US4211601A (en) * | 1978-07-31 | 1980-07-08 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| JPS5679449A (en) * | 1979-11-30 | 1981-06-30 | Mitsubishi Electric Corp | Production of semiconductor device |
| JP3526651B2 (ja) * | 1995-04-28 | 2004-05-17 | ローム株式会社 | 半導体装置および配線方法 |
| US5973342A (en) * | 1996-04-25 | 1999-10-26 | Rohm Co., Ltd. | Semiconductor device having an iridium electrode |
| JP6739187B2 (ja) | 2016-02-22 | 2020-08-12 | 株式会社神戸製鋼所 | 溶接用Ni基合金ソリッドワイヤおよびNi基合金溶接金属の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3615956A (en) * | 1969-03-27 | 1971-10-26 | Signetics Corp | Gas plasma vapor etching process |
-
1972
- 1972-11-22 JP JP11746472A patent/JPS5441870B2/ja not_active Expired
-
1973
- 1973-11-20 DE DE19732357913 patent/DE2357913B2/de not_active Ceased
- 1973-11-20 FR FR7341234A patent/FR2208191B1/fr not_active Expired
- 1973-11-22 GB GB5435573A patent/GB1410728A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4975270A (https=) | 1974-07-19 |
| FR2208191A1 (https=) | 1974-06-21 |
| JPS5441870B2 (https=) | 1979-12-11 |
| FR2208191B1 (https=) | 1978-11-10 |
| DE2357913B2 (de) | 1976-06-24 |
| DE2357913A1 (de) | 1974-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3971684A (en) | Etching thin film circuits and semiconductor chips | |
| US4269654A (en) | Silicon nitride and silicon oxide etchant | |
| US4164461A (en) | Semiconductor integrated circuit structures and manufacturing methods | |
| US3271286A (en) | Selective removal of material using cathodic sputtering | |
| US4107726A (en) | Multilayer interconnected structure for semiconductor integrated circuit | |
| US4285761A (en) | Process for selectively forming refractory metal silicide layers on semiconductor devices | |
| US3474021A (en) | Method of forming openings using sequential sputtering and chemical etching | |
| GB1410728A (en) | Etching methods to their application and to devices produced thereby | |
| NO119149B (https=) | ||
| US3442701A (en) | Method of fabricating semiconductor contacts | |
| GB1319682A (en) | Thin film metallization process for microcircuits | |
| US4370359A (en) | Fabrication technique for junction devices | |
| US3519504A (en) | Method for etching silicon nitride films with sharp edge definition | |
| US3642548A (en) | Method of producing integrated circuits | |
| US4374699A (en) | Method of manufacturing a semiconductor device | |
| RU98115928A (ru) | Способ изготовления полупроводникового прибора | |
| GB1488329A (en) | Semiconductor devices | |
| US3639186A (en) | Process for the production of finely etched patterns | |
| US3436285A (en) | Coatings on germanium bodies | |
| US3526555A (en) | Method of masking a semiconductor with a liftable metallic layer | |
| US3615947A (en) | Method of selective etching | |
| JPS57157545A (en) | Manufacture of semiconductor device | |
| US3592707A (en) | Precision masking using silicon nitride and silicon oxide | |
| JPS5750429A (en) | Manufacture of semiconductor device | |
| GB1312464A (en) | Method of preventing a chemical reaction between aluminium and silicon dioxide in a semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19931121 |