GB1386226A - Method for the controlled formation of the layer of copper sulphide on a cadmium sulphide substrate - Google Patents

Method for the controlled formation of the layer of copper sulphide on a cadmium sulphide substrate

Info

Publication number
GB1386226A
GB1386226A GB2665173A GB2665173A GB1386226A GB 1386226 A GB1386226 A GB 1386226A GB 2665173 A GB2665173 A GB 2665173A GB 2665173 A GB2665173 A GB 2665173A GB 1386226 A GB1386226 A GB 1386226A
Authority
GB
United Kingdom
Prior art keywords
sulphide
substrate
copper
layer
controlled formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2665173A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Publication of GB1386226A publication Critical patent/GB1386226A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/169Photovoltaic cells having only PN heterojunction potential barriers comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2913Materials being Group IIB-VIA materials
    • H10P14/2915Sulfides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
GB2665173A 1972-06-06 1973-06-05 Method for the controlled formation of the layer of copper sulphide on a cadmium sulphide substrate Expired GB1386226A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7220214A FR2188303B1 (https=) 1972-06-06 1972-06-06

Publications (1)

Publication Number Publication Date
GB1386226A true GB1386226A (en) 1975-03-05

Family

ID=9099730

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2665173A Expired GB1386226A (en) 1972-06-06 1973-06-05 Method for the controlled formation of the layer of copper sulphide on a cadmium sulphide substrate

Country Status (5)

Country Link
US (1) US3884779A (https=)
JP (1) JPS5120274B2 (https=)
FR (1) FR2188303B1 (https=)
GB (1) GB1386226A (https=)
NL (1) NL166158C (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137096A (en) * 1977-03-03 1979-01-30 Maier Henry B Low cost system for developing solar cells
JPS53123665U (https=) * 1977-03-11 1978-10-02
JPS5524904A (en) * 1978-06-23 1980-02-22 Natl Res Inst For Metals Removal of heavy metals in aqueous solution by electrolysis
US4167805A (en) * 1978-07-17 1979-09-18 Photon Power, Inc. Cuprous sulfide layer formation for photovoltaic cell
US4376016A (en) * 1981-11-16 1983-03-08 Tdc Technology Development Corporation Baths for electrodeposition of metal chalconide films
FR2529716B1 (fr) * 1982-06-30 1985-06-28 Centre Nat Rech Scient Methode de fabrication des photopiles sulfure de cadmium-sulfure de cuivre
DE3743288A1 (de) 1986-12-30 2015-06-18 Société Anonyme de Télécommunications Bispektrale Empfangsvorrichtung für elektromagnetische Strahlung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US602873A (en) * 1898-04-26 Process of electrolytically manufacturing metallic sulfids
US602872A (en) * 1898-04-26 Process of producing chemical compounds by electrolysis
US1261023A (en) * 1917-06-07 1918-04-02 Charles Owen Griffith Process for the production of metallic sulfids.
US3051636A (en) * 1960-03-30 1962-08-28 Minnesota Mining & Mfg Electrolytic preparation of cadmium salts

Also Published As

Publication number Publication date
NL166158C (nl) 1981-06-15
FR2188303B1 (https=) 1977-04-01
NL7307862A (https=) 1973-12-10
JPS4957783A (https=) 1974-06-05
DE2325723A1 (de) 1973-12-20
FR2188303A1 (https=) 1974-01-18
US3884779A (en) 1975-05-20
DE2325723B2 (de) 1976-07-15
JPS5120274B2 (https=) 1976-06-23
NL166158B (nl) 1981-01-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee