GB1379478A - Electrical resistors - Google Patents
Electrical resistorsInfo
- Publication number
- GB1379478A GB1379478A GB1164772A GB1164772A GB1379478A GB 1379478 A GB1379478 A GB 1379478A GB 1164772 A GB1164772 A GB 1164772A GB 1164772 A GB1164772 A GB 1164772A GB 1379478 A GB1379478 A GB 1379478A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cathode
- tin
- produced
- per cent
- mole per
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physical Vapour Deposition (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
1379478 Resistors MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 13 March 1972 [11 March 1971 17 March 1971 (2)] 11647/72 Heading HIS [Also in Division C7] A resistive film consisting essentially of A1N and a solid solution of TiN and ZrN is produced by the disintegration of a composite cathode. In one embodiment cathodic disintegration of a cathode comprising Al, Ti and Zr in conditions to procure nitriding results in deposition of the film on a substrate. The cathodic sputtering is carried out at low residual gas pressure, below 1 x 10<SP>-6</SP> torr, and at an elevated temperature, 100-300‹ C., in an ionizable medium of nitrogen or nitrogen and argon, the composition of the resistive film produced, and hence the resistivity and temperature coefficient, being dependent upon the structure of the surface of the cathode, a film consisting of 10-50 mole per cent of A1N, 10-80 mole per cent of TiN, and 10-80 mole per cent of ZrN, the ratio of A1N to TiN being less than 1À2, with a resistivity of 350-10,000 Á#cm. and a temperature coefficient of -200 to + 150 ppm/‹C. being produced from a cathode having a surface area 5-40% Al, 15-85% Ti, and 10-80% Zr the ratio of Al to Ti being less than 0À7. Further percentage compositions resistivities and temperature coefficients are given. In an alternative embodiment the resistive film is produced by r.f. sputtering of a cathode consisting of A1N, TiN, and ZrN in low pressure apparatus, examples of the mole per cent of each constituent being given, both for the cathode and the resulting film, together with resistivities and temperature coefficients. Ion beam deposition and other methods of cathodic disintegration may also be used. The resistive films may be anodized in an ammonium borate, ethylene glycol electrolyte.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1382971A JPS5110677B1 (en) | 1971-03-11 | 1971-03-11 | |
| JP1527371A JPS5110678B1 (en) | 1971-03-17 | 1971-03-17 | |
| JP1527471A JPS5110679B1 (en) | 1971-03-17 | 1971-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1379478A true GB1379478A (en) | 1975-01-02 |
Family
ID=27280415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1164772A Expired GB1379478A (en) | 1971-03-11 | 1972-03-13 | Electrical resistors |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3803057A (en) |
| CA (1) | CA985036A (en) |
| FR (1) | FR2128858B1 (en) |
| GB (1) | GB1379478A (en) |
| IT (1) | IT957547B (en) |
| NL (1) | NL7203234A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH673071B5 (en) * | 1988-06-24 | 1990-08-15 | Asulab Sa | |
| US5367285A (en) * | 1993-02-26 | 1994-11-22 | Lake Shore Cryotronics, Inc. | Metal oxy-nitride resistance films and methods of making the same |
| DE19756588A1 (en) * | 1997-12-18 | 1999-07-01 | Hartec Ges Fuer Hartstoffe Und | Layer system, process for its production and its use |
-
1972
- 1972-02-17 US US00227070A patent/US3803057A/en not_active Expired - Lifetime
- 1972-02-21 CA CA135,136A patent/CA985036A/en not_active Expired
- 1972-03-09 IT IT48863/72A patent/IT957547B/en active
- 1972-03-10 FR FR727208517A patent/FR2128858B1/fr not_active Expired
- 1972-03-10 NL NL7203234A patent/NL7203234A/xx not_active Application Discontinuation
- 1972-03-13 GB GB1164772A patent/GB1379478A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA985036A (en) | 1976-03-09 |
| FR2128858A1 (en) | 1972-10-20 |
| DE2211993B2 (en) | 1977-06-16 |
| US3803057A (en) | 1974-04-09 |
| IT957547B (en) | 1973-10-20 |
| DE2211993A1 (en) | 1972-11-02 |
| NL7203234A (en) | 1972-09-13 |
| FR2128858B1 (en) | 1974-06-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PE20 | Patent expired after termination of 20 years |