GB1368515A - Semiconductor detecotrs - Google Patents

Semiconductor detecotrs

Info

Publication number
GB1368515A
GB1368515A GB1129572A GB1129572A GB1368515A GB 1368515 A GB1368515 A GB 1368515A GB 1129572 A GB1129572 A GB 1129572A GB 1129572 A GB1129572 A GB 1129572A GB 1368515 A GB1368515 A GB 1368515A
Authority
GB
United Kingdom
Prior art keywords
mask
gold
vacuum
central electrode
disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1129572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB1368515A publication Critical patent/GB1368515A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)

Abstract

1368515 Vacuum-coating with gold COMMISSARIAT A L'ENERGIE ATOMIQUE 10 March 1972 [15 March 1971] 11295/72 Heading C7F [Also in Division H1] A silicon wafer 1 mounted in a graphite casing 15 within a steel tube 16 is provided with concentric disc and annular gold electrodes (not shown) by vacuum deposition. The apparatus shown is being used for the formation of the annular electrode subsequent to the deposition of the central electrode which is here masked by a steel disc 22 spaced from the wafer by a glass ring 23 but held in place by the action of a magnet 24. The masks 21, 25 are of gold-coated silicon. The upper mask acts to define the source of gold (from evaporated filament 18) and the tapered edge (ca 45 degrees) of the lower mask 25 ensures that the thickness of the deposited annular electrode decreases towards its outer and inner peripheries. The initial formation of the central electrode occurs in the absence of the steel masking disc 22 and with a mask 19 Fig. 2 (not shown) instead of mask 25, mask 19 being similar to mask 25 but having a smaller aperture. The bevel of mask 19 ensures that the thickness of the central electrode also decreases towards its edge. The initial vacuum is 5.10<SP>-5</SP> torr and the graphite block is held at 350‹ C, below the Au-Si eutectic temperature.
GB1129572A 1971-03-15 1972-03-10 Semiconductor detecotrs Expired GB1368515A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7108894A FR2129814B1 (en) 1971-03-15 1971-03-15

Publications (1)

Publication Number Publication Date
GB1368515A true GB1368515A (en) 1974-09-25

Family

ID=9073515

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1129572A Expired GB1368515A (en) 1971-03-15 1972-03-10 Semiconductor detecotrs

Country Status (5)

Country Link
BE (1) BE780596A (en)
DE (1) DE2212267A1 (en)
FR (1) FR2129814B1 (en)
GB (1) GB1368515A (en)
IT (1) IT952974B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102253402A (en) * 2011-05-26 2011-11-23 张阳 Special charge sensitive amplifying circuit for gold silicon surface barrier semiconductor detector
CN113921646A (en) * 2021-09-30 2022-01-11 厦门市三安集成电路有限公司 Single-photon detector, manufacturing method thereof and single-photon detector array

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB916379A (en) * 1960-05-23 1963-01-23 Ass Elect Ind Improvements in and relating to semiconductor junction units

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102253402A (en) * 2011-05-26 2011-11-23 张阳 Special charge sensitive amplifying circuit for gold silicon surface barrier semiconductor detector
CN113921646A (en) * 2021-09-30 2022-01-11 厦门市三安集成电路有限公司 Single-photon detector, manufacturing method thereof and single-photon detector array

Also Published As

Publication number Publication date
BE780596A (en) 1972-07-03
FR2129814B1 (en) 1976-04-16
DE2212267A1 (en) 1972-09-28
FR2129814A1 (en) 1972-11-03
IT952974B (en) 1973-07-30

Similar Documents

Publication Publication Date Title
GB1364898A (en) Method for depositing refractory metal
GB1396987A (en) Method of producing artificial diamonds
GB1294025A (en) Rf sputtering
GB1251631A (en)
GB1170678A (en) A Method of Etching a Film of Silicon Nitride
GB1368515A (en) Semiconductor detecotrs
GB485528A (en) Improvements in and relating to light sensitive devices and methods of manufacturing the same
GB1509077A (en) Metallic iris diaphragms for corpuscular beam apparatus and to methods of manufacture of such diaphragms
US2401736A (en) Phototube and method of manufacture
GB1204210A (en) Semiconductor device
GB1013094A (en) Process for the deposition of a thin layer of a very pure brittle material in crystalline form
GB1328584A (en) Appatatus for the deposition of a layer of semiconductor material on the surface of semiconductor wafers
GB1061714A (en) Magnetrons
GB1128556A (en) Improvements in or relating to the manufacture of high-purity crystalline materials
GB482813A (en) Improvements in or relating to gas-filled or vapour-filled electric discharge devices
GB860551A (en) Improvements in or relating to electron discharge devices
GB816740A (en) Field-effect transistor and method for making same
FR2223842A1 (en) Smaller electrodes for metal-halogen accumulators - by using titanium sheet metal coated with nitride, carbide or oxide
GB1077320A (en) Improvements in and relating to semiconductors
GB1258125A (en)
GB655806A (en) Improvements in or relating to cathode structures for electron discharge devices
GB959299A (en) Improvements relating to devices for diffusion processes
CA843383A (en) Chemical vapor deposition of silicon carbide
BE595995A (en) Process for obtaining ingots of very pure silicon.
GB1038438A (en) Improvements relating to a method of doping semiconductors

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees