GB816740A - Field-effect transistor and method for making same - Google Patents
Field-effect transistor and method for making sameInfo
- Publication number
- GB816740A GB816740A GB3531756A GB3531756A GB816740A GB 816740 A GB816740 A GB 816740A GB 3531756 A GB3531756 A GB 3531756A GB 3531756 A GB3531756 A GB 3531756A GB 816740 A GB816740 A GB 816740A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- boron
- effect transistor
- type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 239000004793 Polystyrene Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 229920002223 polystyrene Polymers 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- -1 boron halide Chemical class 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 150000004678 hydrides Chemical class 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 abstract 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
816,740. Coating with metals. TEXAS INSTRUMENTS Inc. Nov. 19, 1956, No. 35317/56. Class 82(2) [Also in Group XXXVI] A field effect transistor is produced by depositing from the gaseous phase an acceptor (or donor) material over the whole surface of a grooved N tpe (or P type) wafer and then removing all the deposited material except that from the grooved region of the wafer protected by a peripheral band. The Figures show a wafer 10 of N type silicon or germanium having a groove 11. The wafer is heated to between 1000‹C. and 1200‹C. for 8 hours in an atmosphere of 2-5 per cent boron halide or hydride in an inert gas. Boron trichloride and decarborane (B 10 H 14 ) are given as examples, with helium. This results in deposition of boron on the wafer which converts the surface to P-type conductivity. A band of etch resistant material such as polystyrene is then put around that section of the wafer including groove 11, and an etching or sand blasting (e.g. with silica carbide) process applied to remove all the unprotected portion of the P-type layer. After removal of the polystyrene layer the field effect transistor is then provided with ohmic connections on end faces 25 and 26 to constitute source and drain electrodes, the P-region 13 constituting the gate electrode. An aluminium wire may be welded to the P-layer to provide the lead connection. Aluminium, gallium, indium or thallium may be utilized instead of boron. Reference has been directed by the Comptroller to Specification 782,662.
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB816740A true GB816740A (en) | 1959-07-15 |
Family
ID=1744255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3531756A Expired GB816740A (en) | 1956-11-19 | Field-effect transistor and method for making same |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB816740A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1273496B (en) * | 1963-02-08 | 1968-07-25 | Itt Ind Ges Mit Beschraenkter | Method and device for the production of layers from semiconductor material |
-
1956
- 1956-11-19 GB GB3531756A patent/GB816740A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1273496B (en) * | 1963-02-08 | 1968-07-25 | Itt Ind Ges Mit Beschraenkter | Method and device for the production of layers from semiconductor material |
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