GB1367030A - Method of manufacturing high breakdown voltage rectifiers - Google Patents

Method of manufacturing high breakdown voltage rectifiers

Info

Publication number
GB1367030A
GB1367030A GB2307873A GB2307873A GB1367030A GB 1367030 A GB1367030 A GB 1367030A GB 2307873 A GB2307873 A GB 2307873A GB 2307873 A GB2307873 A GB 2307873A GB 1367030 A GB1367030 A GB 1367030A
Authority
GB
United Kingdom
Prior art keywords
breakdown voltage
high breakdown
manufacturing high
voltage rectifiers
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2307873A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1367030A publication Critical patent/GB1367030A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/054—Flat sheets-substrates

Landscapes

  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
GB2307873A 1972-05-19 1973-05-15 Method of manufacturing high breakdown voltage rectifiers Expired GB1367030A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47051435A JPS519269B2 (enExample) 1972-05-19 1972-05-19

Publications (1)

Publication Number Publication Date
GB1367030A true GB1367030A (en) 1974-09-18

Family

ID=12886837

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2307873A Expired GB1367030A (en) 1972-05-19 1973-05-15 Method of manufacturing high breakdown voltage rectifiers

Country Status (7)

Country Link
US (1) US3929531A (enExample)
JP (1) JPS519269B2 (enExample)
CA (1) CA980916A (enExample)
DE (1) DE2325351C3 (enExample)
FR (1) FR2185859B1 (enExample)
GB (1) GB1367030A (enExample)
IT (1) IT985188B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2359511C2 (de) * 1973-11-29 1987-03-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum lokalisierten Ätzen von Gräben in Siliciumkristallen
FR2294549A1 (fr) * 1974-12-09 1976-07-09 Radiotechnique Compelec Procede de realisation de dispositifs optoelectroniques
US4319265A (en) * 1979-12-06 1982-03-09 The United States Of America As Represented By The Secretary Of The Army Monolithically interconnected series-parallel avalanche diodes
JPS59146114A (ja) * 1984-02-06 1984-08-21 松下電器産業株式会社 スイツチ
JPS63192632U (enExample) * 1987-05-29 1988-12-12

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1193766B (de) * 1961-01-27 1965-05-26 Siemens Ag Verfahren zur Stabilisierung der durch AEtzen erzielten Sperreigenschaften von Halbleiteranordnungen
DE1287404B (de) * 1961-07-06 1969-01-16 Licentia Gmbh Verfahren zum Vorbereiten von Siliziumkoerpern fuer das Dotieren durch AEtzen
DE1258235B (de) * 1965-01-04 1968-01-04 Licentia Gmbh Verfahren zur Herstellung einer, die Sperrspannungsfestigkeit erhoehenden Randzonenprofilierung von Siliziumscheiben
US3597289A (en) * 1967-01-19 1971-08-03 Licentia Gmbh Method of etching a semiconductor body
GB1139154A (en) * 1967-01-30 1969-01-08 Westinghouse Brake & Signal Semi-conductor devices and the manufacture thereof
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
US3627598A (en) * 1970-02-05 1971-12-14 Fairchild Camera Instr Co Nitride passivation of mesa transistors by phosphovapox lifting
US3706129A (en) * 1970-07-27 1972-12-19 Gen Electric Integrated semiconductor rectifiers and processes for their fabrication
NL167277C (nl) * 1970-08-29 1981-11-16 Philips Nv Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.
US3689993A (en) * 1971-07-26 1972-09-12 Texas Instruments Inc Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks
US3791948A (en) * 1971-11-01 1974-02-12 Bell Telephone Labor Inc Preferential etching in g a p
US3859127A (en) * 1972-01-24 1975-01-07 Motorola Inc Method and material for passivating the junctions of mesa type semiconductor devices

Also Published As

Publication number Publication date
DE2325351A1 (de) 1973-11-29
IT985188B (it) 1974-11-30
DE2325351C3 (de) 1981-01-29
FR2185859B1 (enExample) 1977-11-10
FR2185859A1 (enExample) 1974-01-04
JPS519269B2 (enExample) 1976-03-25
CA980916A (en) 1975-12-30
JPS499977A (enExample) 1974-01-29
US3929531A (en) 1975-12-30
DE2325351B2 (de) 1980-05-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19930514