GB1364035A - Method for the manufacturing of a zener diode - Google Patents

Method for the manufacturing of a zener diode

Info

Publication number
GB1364035A
GB1364035A GB743173A GB743173A GB1364035A GB 1364035 A GB1364035 A GB 1364035A GB 743173 A GB743173 A GB 743173A GB 743173 A GB743173 A GB 743173A GB 1364035 A GB1364035 A GB 1364035A
Authority
GB
United Kingdom
Prior art keywords
zone
diffused
mask
donor
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB743173A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1364035A publication Critical patent/GB1364035A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Thyristors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
GB743173A 1972-02-18 1973-02-15 Method for the manufacturing of a zener diode Expired GB1364035A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2207654A DE2207654B2 (de) 1972-02-18 1972-02-18 Verfahren zum Herstellen einer Zenerdiode

Publications (1)

Publication Number Publication Date
GB1364035A true GB1364035A (en) 1974-08-21

Family

ID=5836353

Family Applications (1)

Application Number Title Priority Date Filing Date
GB743173A Expired GB1364035A (en) 1972-02-18 1973-02-15 Method for the manufacturing of a zener diode

Country Status (5)

Country Link
AU (1) AU463838B2 (cg-RX-API-DMAC7.html)
DE (1) DE2207654B2 (cg-RX-API-DMAC7.html)
FR (1) FR2172191B1 (cg-RX-API-DMAC7.html)
GB (1) GB1364035A (cg-RX-API-DMAC7.html)
IT (1) IT979130B (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2149205A (en) * 1983-10-31 1985-06-05 Burr Brown Corp Integrated circuit reference diode and fabrication method therefor
EP1164643A3 (en) * 2000-06-07 2004-09-29 NEC Electronics Corporation Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof
CN113206157A (zh) * 2021-04-30 2021-08-03 中国振华集团永光电子有限公司（国营第八七三厂） 体内击穿玻钝二极管及制造方法
CN114551567A (zh) * 2022-01-21 2022-05-27 吉林华微电子股份有限公司 一种齐纳二极管及齐纳二极管制作方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7513161A (nl) * 1975-11-11 1977-05-13 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze.
DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung
NL7907680A (nl) * 1979-10-18 1981-04-22 Philips Nv Zenerdiode.
NL187942C (nl) * 1980-08-18 1992-02-17 Philips Nv Zenerdiode en werkwijze ter vervaardiging daarvan.
FR2500855A1 (fr) * 1981-02-27 1982-09-03 Thomson Csf Procede de dopage et de metallisation d'une zone superficielle d'un composant semi-conducteur et diode zener obtenue
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2149205A (en) * 1983-10-31 1985-06-05 Burr Brown Corp Integrated circuit reference diode and fabrication method therefor
EP1164643A3 (en) * 2000-06-07 2004-09-29 NEC Electronics Corporation Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof
CN113206157A (zh) * 2021-04-30 2021-08-03 中国振华集团永光电子有限公司（国营第八七三厂） 体内击穿玻钝二极管及制造方法
CN114551567A (zh) * 2022-01-21 2022-05-27 吉林华微电子股份有限公司 一种齐纳二极管及齐纳二极管制作方法
CN114551567B (zh) * 2022-01-21 2026-04-28 吉林华微电子股份有限公司 一种齐纳二极管及齐纳二极管制作方法

Also Published As

Publication number Publication date
DE2207654A1 (de) 1973-08-30
FR2172191B1 (cg-RX-API-DMAC7.html) 1978-04-14
IT979130B (it) 1974-09-30
DE2207654B2 (de) 1974-02-14
FR2172191A1 (cg-RX-API-DMAC7.html) 1973-09-28
AU5200373A (en) 1974-08-08
AU463838B2 (en) 1975-08-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee