GB1360996A - Semiconductor device and method for manufacture - Google Patents

Semiconductor device and method for manufacture

Info

Publication number
GB1360996A
GB1360996A GB1918471*[A GB1918471A GB1360996A GB 1360996 A GB1360996 A GB 1360996A GB 1918471 A GB1918471 A GB 1918471A GB 1360996 A GB1360996 A GB 1360996A
Authority
GB
United Kingdom
Prior art keywords
semi
islands
conductor
june
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1918471*[A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1360996A publication Critical patent/GB1360996A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
GB1918471*[A 1970-06-15 1971-06-07 Semiconductor device and method for manufacture Expired GB1360996A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5100070 1970-06-15

Publications (1)

Publication Number Publication Date
GB1360996A true GB1360996A (en) 1974-07-24

Family

ID=12874501

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1918471*[A Expired GB1360996A (en) 1970-06-15 1971-06-07 Semiconductor device and method for manufacture
GB785274A Expired GB1362512A (en) 1970-06-15 1971-06-07 Semiconductor device and method for manufacture

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB785274A Expired GB1362512A (en) 1970-06-15 1971-06-07 Semiconductor device and method for manufacture

Country Status (4)

Country Link
DE (1) DE2129676A1 (cg-RX-API-DMAC7.html)
FR (1) FR2095258B1 (cg-RX-API-DMAC7.html)
GB (2) GB1360996A (cg-RX-API-DMAC7.html)
NL (1) NL7108101A (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19643143C2 (de) * 1996-10-18 2002-06-20 Inventa Ag Haftvermittler für Polyamid-Verbunde, Verfahren zu deren Herstellung sowie deren Verwendung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1086607A (en) * 1965-06-03 1967-10-11 Ncr Co Method of electrically isolating components in solid-state electronic circuits
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.

Also Published As

Publication number Publication date
FR2095258A1 (cg-RX-API-DMAC7.html) 1972-02-11
GB1362512A (en) 1974-08-07
FR2095258B1 (cg-RX-API-DMAC7.html) 1977-04-22
DE2129676A1 (de) 1972-02-10
NL7108101A (cg-RX-API-DMAC7.html) 1971-12-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees