GB1359707A - Transistor for operation at very high frequencies and a method for the manufacture thereof - Google Patents
Transistor for operation at very high frequencies and a method for the manufacture thereofInfo
- Publication number
- GB1359707A GB1359707A GB3200071A GB3200071A GB1359707A GB 1359707 A GB1359707 A GB 1359707A GB 3200071 A GB3200071 A GB 3200071A GB 3200071 A GB3200071 A GB 3200071A GB 1359707 A GB1359707 A GB 1359707A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- transistor
- ion
- wafer
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 3
- -1 argon ions Chemical class 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR707025558A FR2096876B1 (enrdf_load_stackoverflow) | 1970-07-09 | 1970-07-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1359707A true GB1359707A (en) | 1974-07-10 |
Family
ID=9058531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3200071A Expired GB1359707A (en) | 1970-07-09 | 1971-07-07 | Transistor for operation at very high frequencies and a method for the manufacture thereof |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR2096876B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1359707A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0012838A1 (de) * | 1978-12-22 | 1980-07-09 | International Business Machines Corporation | Ionenquelle, insbesondere für Ionenimplantationsanlagen |
| EP0021140A1 (de) * | 1979-06-29 | 1981-01-07 | International Business Machines Corporation | Ionenquelle in einer Vakuumkammer und Verfahren zum Betrieb derselben |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2027986B (en) * | 1978-07-31 | 1983-01-19 | Philips Electronic Associated | Infra-red detectors |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1228754A (enrdf_load_stackoverflow) * | 1967-05-26 | 1971-04-21 |
-
1970
- 1970-07-09 FR FR707025558A patent/FR2096876B1/fr not_active Expired
-
1971
- 1971-07-07 GB GB3200071A patent/GB1359707A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0012838A1 (de) * | 1978-12-22 | 1980-07-09 | International Business Machines Corporation | Ionenquelle, insbesondere für Ionenimplantationsanlagen |
| EP0021140A1 (de) * | 1979-06-29 | 1981-01-07 | International Business Machines Corporation | Ionenquelle in einer Vakuumkammer und Verfahren zum Betrieb derselben |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2096876B1 (enrdf_load_stackoverflow) | 1973-08-10 |
| FR2096876A1 (enrdf_load_stackoverflow) | 1972-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3562022A (en) | Method of doping semiconductor bodies by indirection implantation | |
| GB1139623A (en) | Field-effect device with insulated gate | |
| US3563809A (en) | Method of making semiconductor devices with ion beams | |
| SE7613031L (sv) | Sett att framstella halvledaranordning | |
| US3390019A (en) | Method of making a semiconductor by ionic bombardment | |
| US3431150A (en) | Process for implanting grids in semiconductor devices | |
| GB1459040A (en) | Semiconductor devices | |
| US3773566A (en) | Method for fabricating semiconductor device having semiconductor circuit element in isolated semiconductor region | |
| US3523042A (en) | Method of making bipolar transistor devices | |
| GB1359707A (en) | Transistor for operation at very high frequencies and a method for the manufacture thereof | |
| US3929512A (en) | Semiconductor devices | |
| GB1562875A (en) | Method of making static induction transistor locic | |
| US3660171A (en) | Method for producing semiconductor device utilizing ion implantation | |
| US3351503A (en) | Production of p-nu junctions by diffusion | |
| GB1228754A (enrdf_load_stackoverflow) | ||
| GB1402998A (en) | Apparatus and process for forming p-n junction semiconductor units | |
| GB1525936A (en) | Transistor and integrated circuit manufacture | |
| JPS6424422A (en) | Formation of fine pattern | |
| JPS5615045A (en) | Formation of pattern | |
| JPS5623775A (en) | Manufacture of integrated circuit | |
| JPS57111019A (en) | Doping method for impurity | |
| FR2315173A1 (fr) | Procede de preparation de matrice a semi-conducteurs a elements luminescents | |
| JPS60149125A (ja) | 半導体基板への不純物添加方法 | |
| JPS5759321A (en) | Manufacture of semiconductor device | |
| JPS62126539A (ja) | イオン注入装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |