GB1525936A - Transistor and integrated circuit manufacture - Google Patents

Transistor and integrated circuit manufacture

Info

Publication number
GB1525936A
GB1525936A GB47976/75A GB4797675A GB1525936A GB 1525936 A GB1525936 A GB 1525936A GB 47976/75 A GB47976/75 A GB 47976/75A GB 4797675 A GB4797675 A GB 4797675A GB 1525936 A GB1525936 A GB 1525936A
Authority
GB
United Kingdom
Prior art keywords
bombardment
semiconductor
bipolar transistor
base region
storage time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB47976/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Ltd
Original Assignee
Texas Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Ltd filed Critical Texas Instruments Ltd
Priority to GB47976/75A priority Critical patent/GB1525936A/en
Publication of GB1525936A publication Critical patent/GB1525936A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1525936 Semiconductor devices TEXAS INSTRUMENTS Ltd 21 Nov 1975 47976/75 Heading H1K The minority carrier storage time of an "extrinsic" part of the base region of a bipolar transistor is reduced by bombardment with ions (e.g. B or H for a Si body) or neutral atomic particles. The bombardment induces lattice defects which form recombination centres, and annealing of the defects is kept to a minimum by ensuring that the semiconductor is not maintained at an elevated temperature for too long either during or subsequent to bombardment. In the illustrated application a portion 7 of the base region 4 of an inversely-operated vertical bipolar transistor forming part of an integrated-injection-logic circuit is subjected to bombardment by an ion beam 11 to reduce the minority carrier storage time therein. An Al mask may be used to delimit the extent of the bombarded area. Bombardment may take place through an oxide coating or directly on to the semiconductor surface.
GB47976/75A 1975-11-21 1975-11-21 Transistor and integrated circuit manufacture Expired GB1525936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB47976/75A GB1525936A (en) 1975-11-21 1975-11-21 Transistor and integrated circuit manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB47976/75A GB1525936A (en) 1975-11-21 1975-11-21 Transistor and integrated circuit manufacture

Publications (1)

Publication Number Publication Date
GB1525936A true GB1525936A (en) 1978-09-27

Family

ID=10446927

Family Applications (1)

Application Number Title Priority Date Filing Date
GB47976/75A Expired GB1525936A (en) 1975-11-21 1975-11-21 Transistor and integrated circuit manufacture

Country Status (1)

Country Link
GB (1) GB1525936A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455437A (en) * 1991-11-20 1995-10-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having crystalline defect isolation regions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455437A (en) * 1991-11-20 1995-10-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having crystalline defect isolation regions

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee