GB1358416A - Apparatus for preparing an electronic component on a substrate by vapour deposition - Google Patents

Apparatus for preparing an electronic component on a substrate by vapour deposition

Info

Publication number
GB1358416A
GB1358416A GB4142571A GB4142571A GB1358416A GB 1358416 A GB1358416 A GB 1358416A GB 4142571 A GB4142571 A GB 4142571A GB 4142571 A GB4142571 A GB 4142571A GB 1358416 A GB1358416 A GB 1358416A
Authority
GB
United Kingdom
Prior art keywords
substrate
wheel
mask
housing
moving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4142571A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1358416A publication Critical patent/GB1358416A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Manufacturing Of Printed Wiring (AREA)
GB4142571A 1970-09-24 1971-09-06 Apparatus for preparing an electronic component on a substrate by vapour deposition Expired GB1358416A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7521770A 1970-09-24 1970-09-24

Publications (1)

Publication Number Publication Date
GB1358416A true GB1358416A (en) 1974-07-03

Family

ID=22124313

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4142571A Expired GB1358416A (en) 1970-09-24 1971-09-06 Apparatus for preparing an electronic component on a substrate by vapour deposition

Country Status (5)

Country Link
US (1) US3669060A (cg-RX-API-DMAC7.html)
JP (1) JPS5014996B1 (cg-RX-API-DMAC7.html)
DE (1) DE2146985A1 (cg-RX-API-DMAC7.html)
FR (1) FR2107928B1 (cg-RX-API-DMAC7.html)
GB (1) GB1358416A (cg-RX-API-DMAC7.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2118365A (en) * 1982-04-13 1983-10-26 Suwa Seikosha Kk A thin film MOS transistor and an active matrix liquid crystal display device
GB2140460A (en) * 1983-05-27 1984-11-28 Dowty Electronics Ltd Insulated metal substrates
GB2203758A (en) * 1987-03-31 1988-10-26 Central Glass Co Ltd Method of forming coating film of fluororesin by physical vapor deposition
GB2212519A (en) * 1987-11-13 1989-07-26 Vg Instr Group Vacuum evaporation and deposition
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096821A (en) * 1976-12-13 1978-06-27 Westinghouse Electric Corp. System for fabricating thin-film electronic components
US4777909A (en) * 1981-02-09 1988-10-18 Applied Magnetics Corporation Carriage apparatus for indexing and accurately registering a selected stabilized mask of a plurality of stabilizing masks between a substrate and a source
US4492180A (en) * 1981-03-16 1985-01-08 Applied Magnetics Corporation Apparatus for indexing and registering a selected deposition mask to a substrate and method therefor
US4633810A (en) * 1981-09-21 1987-01-06 Applied Magnetics Corp. Apparatus for accurately registering a first member and a second member in an interdependent relationship
GB2272225B (en) * 1992-10-06 1996-07-17 Balzers Hochvakuum A method for masking a workpiece and a vacuum treatment facility
DE4235678C1 (de) * 1992-10-22 1994-05-26 Balzers Hochvakuum Verfahren zur Oberflächenbehandlung eines Werkstückes, und Vakuumbehandlungsanlage zur Durchführung des Verfahrens
US7019208B2 (en) * 2001-11-20 2006-03-28 Energy Photovoltaics Method of junction formation for CIGS photovoltaic devices
US20030151118A1 (en) * 2002-02-14 2003-08-14 3M Innovative Properties Company Aperture masks for circuit fabrication
US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US7410919B2 (en) * 2003-06-27 2008-08-12 International Business Machines Corporation Mask and substrate alignment for solder bump process
NL1024215C2 (nl) * 2003-09-03 2005-03-07 Otb Group Bv Systeem en werkwijze voor het behandelen van substraten, alsmede een gebruik van een dergelijke systeem en een transportinrichting.
US20070137568A1 (en) * 2005-12-16 2007-06-21 Schreiber Brian E Reciprocating aperture mask system and method
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
US8628620B2 (en) * 2011-01-07 2014-01-14 Sharp Kabushiki Kaisha Vapor deposition device and vapor deposition method
GB2488568B (en) * 2011-03-02 2014-01-01 Rolls Royce Plc A method and apparatus for masking a portion of a component
CN104213074B (zh) * 2014-08-21 2016-06-29 宁波英飞迈材料科技有限公司 一种原位掩模转换装置及其使用方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5124768A (en) * 1982-04-13 1992-06-23 Seiko Epson Corporation Thin film transistor and active matrix assembly including same
US5294555A (en) * 1982-04-13 1994-03-15 Seiko Epson Corporation Method of manufacturing thin film transistor and active matrix assembly including same
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
GB2118365A (en) * 1982-04-13 1983-10-26 Suwa Seikosha Kk A thin film MOS transistor and an active matrix liquid crystal display device
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6242777B1 (en) 1982-04-13 2001-06-05 Seiko Epson Corporation Field effect transistor and liquid crystal devices including the same
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
GB2140460A (en) * 1983-05-27 1984-11-28 Dowty Electronics Ltd Insulated metal substrates
GB2203758A (en) * 1987-03-31 1988-10-26 Central Glass Co Ltd Method of forming coating film of fluororesin by physical vapor deposition
GB2203758B (en) * 1987-03-31 1991-06-19 Central Glass Co Ltd Method of forming coating film of fluororesin by physical vapor deposition
GB2212519A (en) * 1987-11-13 1989-07-26 Vg Instr Group Vacuum evaporation and deposition
GB2212519B (en) * 1987-11-13 1992-05-20 Vg Instr Group Vacuum evaporation and deposition

Also Published As

Publication number Publication date
FR2107928B1 (cg-RX-API-DMAC7.html) 1977-04-22
US3669060A (en) 1972-06-13
FR2107928A1 (cg-RX-API-DMAC7.html) 1972-05-12
DE2146985A1 (de) 1972-03-30
JPS5014996B1 (cg-RX-API-DMAC7.html) 1975-05-31

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee