GB1011173A - Improvements in and relating to the making and testing of thin film articles - Google Patents

Improvements in and relating to the making and testing of thin film articles

Info

Publication number
GB1011173A
GB1011173A GB34741/63D GB3474163D GB1011173A GB 1011173 A GB1011173 A GB 1011173A GB 34741/63 D GB34741/63 D GB 34741/63D GB 3474163 D GB3474163 D GB 3474163D GB 1011173 A GB1011173 A GB 1011173A
Authority
GB
United Kingdom
Prior art keywords
substrates
substrate
thin film
article
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB34741/63D
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RTX Corp
Original Assignee
United Aircraft Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Aircraft Corp filed Critical United Aircraft Corp
Publication of GB1011173A publication Critical patent/GB1011173A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00Electron-beam welding or cutting
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/24Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
    • H01C17/2404Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by charged particle impact, e.g. by electron or ion beam milling, sputtering, plasma etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3005Observing the objects or the point of impact on the object
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302Controlling tubes by external information, e.g. programme control
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

<PICT:1011173/C4-C5/1> <PICT:1011173/C4-C5/2> In a method of testing a thin film article, a light-emissive substrate carrying said article is bombarded with a non-destructive beam of charged particles to cause the substrate to emit light, and the thus illuminated article is examined for variations in opacity indicative of flaws therein. As shown, electrons from cathode 16, Fig. 1, are accelerated by anode 18 and focused into a beam by magnetic lenses 24, 26, 29 and diaphragms 28, 30, the beam current being controlled by grid cup 20. An optical viewing system includes light 38, mirrors 40, 42 and lens 50, the viewer being protected by a leaded glass window 52. Two substrates to be coated are secured by supports 68, 70 to a part-cylindrical member 60 which is rotatable by geas 62, 63. Initially the substrates are positioned as shown in Fig. 2, and a crucible 76, movable along track 74, is aligned with the electron beam, material therein being evaporated and condensing as an even film on the substrates. Photo-electric devices monitoring light through a transparent surface which is also exposed to the vapour may be used to automatically cut off the beam when the desired coating thickness is reached. The crucible and substrates are then moved to the position shown in Fig. 1, and the beam focus is adjusted for scribing, by local evaporation, discrete lines or patterns in the substrate coating to form thin film resistors, inductors or capacitors, the beam being moved for this purpose by deflecting coils 34. The beam may also be used to weld leads to contact pads provided on the thin film device. Finally, the coated substrate is irradiated with a moving reduced-intensity, defocused electron beam which causes suitable substrates, e.g. of aluminium, to fluoresce, and thereby reveals flaws or discontinuities in the coating film and scribed pattern as variations in the opacity of the film even when it is covered by protective SiO. This irradiation also yields information as to the surface condition of the substrate, as the colour of the fluorescence varies with the electron bombardment to which the alumina has been previously subjected.ALSO:<PICT:1011173/C6-C7/1> <PICT:1011173/C6-C7/2> In a method of testing a thin film article, a light-emissive substrate carrying said article is bombarded with a non-destructive beam of charged particles to cause the substrate to emit light, and the thus illuminated article is examined for variations in opacity indicative of flaws therein. As shown, electrons from cathode 16, Fig. 1, are accelerated by anode 18 and focused into a beam by magnetic lenses 24, 26, 29 and diaphragms 28, 30, the beam current being controlled by grid cup 20. An optical viewing system includes light 38, mirrors 40, 42 and lens 50, the viewer being protected by a leaded glass window 52. Two substrates to be coated are secured by supports 68, 70 to a part-cylindrical member 60 which is rotatable by gears 62, 63. Initially the substrates are positioned as shown in Fig. 2, and a crucible 76, movable along track 74, is aligned with the electron beam, material therein being evaporated and condensing as an even film on the substrates. Photoelectric devices monitoring light through a transparent surface which is also exposed to the vapour may be used to automatically cut off the beam when the desired coating thickness is reached. The crucible and substrates are then moved to the position shown in Fig. 1, and the beam focus is adjusted for scribing, by local evaporation, discrete lines or patterns in the substrate coating to form thin film resistors, inductors or capacitors, the beam being moved for this purpose by deflecting coils 34. The beam may also be used to weld leads to contact pads provided on the thin film device. Finally, the coated substrate is irradiated with a moving reduced-intensity, defocused electron beam which causes suitable substrates, e.g. of aluminium, to fluoresce, and thereby reveals flaws or discontinuities in the coating film and scribed pattern as variations in the opacity of the film even when it is covered by protective SiO. This irradiation also yields information as to the surface condition of the substrate, as the colour of the fluorescence varies with the electron bombardment to which the alumina has been previously subjected.
GB34741/63D 1962-09-04 1963-09-03 Improvements in and relating to the making and testing of thin film articles Expired GB1011173A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US220987A US3162767A (en) 1962-09-04 1962-09-04 Method for nondestructive testing by using a defocussed electron beam

Publications (1)

Publication Number Publication Date
GB1011173A true GB1011173A (en) 1965-11-24

Family

ID=22825863

Family Applications (1)

Application Number Title Priority Date Filing Date
GB34741/63D Expired GB1011173A (en) 1962-09-04 1963-09-03 Improvements in and relating to the making and testing of thin film articles

Country Status (3)

Country Link
US (1) US3162767A (en)
GB (1) GB1011173A (en)
NL (1) NL297262A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2499245A1 (en) * 1981-02-04 1982-08-06 Seiko Instr & Electronics X-RAY FLUORESCENCE DEVICE

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330696A (en) * 1967-07-11 Method of fabricating thin film capacitors
US3251536A (en) * 1963-10-08 1966-05-17 Cons Vacuum Corp Getter-ion pumps
US3404255A (en) * 1965-06-23 1968-10-01 Bendix Corp Source of vaporizable material for bombardment thereof by an electron bombarding means
US3447366A (en) * 1965-06-22 1969-06-03 Humberto Fernandez Moran Villa Process of determining dimensions and properties of cutting edges of molecular dimensions
US3420978A (en) * 1965-06-30 1969-01-07 Nasa Pretreatment method for antiwettable materials
US3293587A (en) * 1965-10-20 1966-12-20 Sprague Electric Co Electrical resistor and the like
CH427744A (en) * 1965-11-26 1967-01-15 Balzers Patent Beteilig Ag Process for the thermal evaporation of mixtures of substances in a vacuum
DE1614635A1 (en) * 1967-10-23 1970-03-26 Siemens Ag Process for the production of photoresist masks for semiconductor purposes
JPS5423473A (en) * 1977-07-25 1979-02-22 Cho Lsi Gijutsu Kenkyu Kumiai Photomask and method of inspecting mask pattern using same
JPS59168652A (en) * 1983-03-16 1984-09-22 Hitachi Ltd Method and apparatus for correcting element
JP5556825B2 (en) * 2012-01-24 2014-07-23 株式会社安川電機 Production system and article manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1640567A (en) * 1925-07-20 1927-08-30 Univ Michigan Machine for detecting flaws
US2259400A (en) * 1938-08-17 1941-10-14 Robert C Switzer Flaw detection
CH311812A (en) * 1951-11-05 1955-12-15 Zeiss Carl Fa Evaporation device.
US3049618A (en) * 1959-05-13 1962-08-14 Commissariat Energie Atomique Methods and devices for performing spectrum analysis, in particular in the far ultraviolet region

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2499245A1 (en) * 1981-02-04 1982-08-06 Seiko Instr & Electronics X-RAY FLUORESCENCE DEVICE

Also Published As

Publication number Publication date
US3162767A (en) 1964-12-22
NL297262A (en)

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