JPS5646463A - Sample observing method - Google Patents

Sample observing method

Info

Publication number
JPS5646463A
JPS5646463A JP12335579A JP12335579A JPS5646463A JP S5646463 A JPS5646463 A JP S5646463A JP 12335579 A JP12335579 A JP 12335579A JP 12335579 A JP12335579 A JP 12335579A JP S5646463 A JPS5646463 A JP S5646463A
Authority
JP
Japan
Prior art keywords
sample
electron beam
irradiated
light
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12335579A
Other languages
Japanese (ja)
Other versions
JPH0210381B2 (en
Inventor
Kazumichi Ogura
Masao Murota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP12335579A priority Critical patent/JPS5646463A/en
Publication of JPS5646463A publication Critical patent/JPS5646463A/en
Publication of JPH0210381B2 publication Critical patent/JPH0210381B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Investigating Or Analysing Biological Materials (AREA)
  • Microscoopes, Condenser (AREA)

Abstract

PURPOSE: To secure a simutaneous acquisition of both the optical microscope image and the image based on the electron beam scanning for the same sample, by putting the sample on the transparent glass plate having a transparent conducting film and then irradiating the light or the electron beam to the sample.
CONSTITUTION: The piece sample 3 of the cell or the like is put on the slide glass 1 with a transparent conducting film made of the oxide of the indium or tin formed on the surface. And then the electron beam is irradiated on the sample 3 while being stopped down through the electronic lens 5. At the same time, the light generated from the light source 6 is irradiated simultaneously or alternately with the electron beam via the lens 7 and the mirror 8 provided at the path of the electron beam. The electron beam irradiated on the sample 3 receives a 2-dimensional scanning on the sample 3 and by the deflecting coil 10. Through this scanning of the electron beam, the information generated from the sample is detected by the detector 11 and then sent to the display unit 13. And the light irradiated on the sample 3 tansmits through the glass 1 to enter the object lens 15 of the optical microscope 14.
COPYRIGHT: (C)1981,JPO&Japio
JP12335579A 1979-09-26 1979-09-26 Sample observing method Granted JPS5646463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12335579A JPS5646463A (en) 1979-09-26 1979-09-26 Sample observing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12335579A JPS5646463A (en) 1979-09-26 1979-09-26 Sample observing method

Publications (2)

Publication Number Publication Date
JPS5646463A true JPS5646463A (en) 1981-04-27
JPH0210381B2 JPH0210381B2 (en) 1990-03-07

Family

ID=14858518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12335579A Granted JPS5646463A (en) 1979-09-26 1979-09-26 Sample observing method

Country Status (1)

Country Link
JP (1) JPS5646463A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62209365A (en) * 1986-03-11 1987-09-14 Tamotsu Inoue Observation box
JP2008300354A (en) * 2007-05-31 2008-12-11 Fei Co Sample carrier for use in charged particle device, method of using sample carrier, and device equipped to use above sample carrier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62209365A (en) * 1986-03-11 1987-09-14 Tamotsu Inoue Observation box
JP2008300354A (en) * 2007-05-31 2008-12-11 Fei Co Sample carrier for use in charged particle device, method of using sample carrier, and device equipped to use above sample carrier

Also Published As

Publication number Publication date
JPH0210381B2 (en) 1990-03-07

Similar Documents

Publication Publication Date Title
US3975637A (en) Device for storage and display of a radiation image
US4733063A (en) Scanning laser microscope with aperture alignment
AU6431090A (en) Examination of objects of macromolecular size
JPS55121259A (en) Elelctron microscope
GB1011173A (en) Improvements in and relating to the making and testing of thin film articles
JPH07324923A (en) Device for projecting test pattern on surface under test
JPS5646463A (en) Sample observing method
JPS6488338A (en) Apparatus and method for irradiating sample with light to gather light radiated from sample
JPS564004A (en) System for detecting minute defects of body
JPS56116259A (en) Transmissive electron microscope
JPS5228335A (en) Optical unit
KR830002361B1 (en) Sample observation method
US4073586A (en) Arrangement for projecting images of markers on to a photosensitive surface in a telecine equipment
JPS52113750A (en) Scanning optical system having beam detecting optics for information
GB1525251A (en) Devices for the recording and reproduction of x-ray image
JPS55117388A (en) Scanning electronic microscope or its similar device
JPH10142489A (en) Method and device for focus detection
JPS55128242A (en) Reflection electron detector
JPS56128408A (en) X-ray thickness gauge
Young Physics in police investigations
JPS5776439A (en) Method for measurement of contact angle
JPS55121125A (en) Beam detecting and beam visualizing method
JPS5638072A (en) Erasing level monitoring method of thermoplastic resin base hologram material
JPS55105241A (en) Irradiation image projector
Harvey et al. A study of techniques applicable to the automated assessment of alpha and proton-induced etch pits