GB1356670A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1356670A GB1356670A GB4507971A GB4507971A GB1356670A GB 1356670 A GB1356670 A GB 1356670A GB 4507971 A GB4507971 A GB 4507971A GB 4507971 A GB4507971 A GB 4507971A GB 1356670 A GB1356670 A GB 1356670A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- gate electrode
- thyristor
- layers
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45089147A JPS5125116B1 (enrdf_load_stackoverflow) | 1970-10-08 | 1970-10-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1356670A true GB1356670A (en) | 1974-06-12 |
Family
ID=13962739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4507971A Expired GB1356670A (en) | 1970-10-08 | 1971-09-28 | Semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5125116B1 (enrdf_load_stackoverflow) |
| CA (1) | CA931661A (enrdf_load_stackoverflow) |
| DE (1) | DE2149760A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2110299B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1356670A (enrdf_load_stackoverflow) |
| NL (1) | NL7113770A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2243021A (en) * | 1990-04-09 | 1991-10-16 | Philips Electronic Associated | Mos- gated thyristor |
| DE19520785C2 (de) * | 1994-06-08 | 2001-12-06 | Fuji Electric Co Ltd | Thyristor mit isoliertem Gate |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2904424C2 (de) * | 1979-02-06 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
| DE2915885C2 (de) * | 1979-04-19 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
| DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
| DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
| DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
| FR2488046A1 (fr) * | 1980-07-31 | 1982-02-05 | Silicium Semiconducteur Ssc | Dispositif de puissance a commande par transistor dmos |
| FR3127456A1 (fr) | 2021-09-30 | 2023-03-31 | Psa Automobiles Sa | Console centrale à organe de commande à deux déclencheurs d’éclairage interne, pour un véhicule |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5113802B2 (enrdf_load_stackoverflow) * | 1972-09-13 | 1976-05-04 |
-
1970
- 1970-10-08 JP JP45089147A patent/JPS5125116B1/ja active Pending
-
1971
- 1971-09-28 GB GB4507971A patent/GB1356670A/en not_active Expired
- 1971-10-05 DE DE19712149760 patent/DE2149760A1/de active Pending
- 1971-10-05 CA CA124476A patent/CA931661A/en not_active Expired
- 1971-10-07 FR FR7136156A patent/FR2110299B1/fr not_active Expired
- 1971-10-07 NL NL7113770A patent/NL7113770A/xx not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2243021A (en) * | 1990-04-09 | 1991-10-16 | Philips Electronic Associated | Mos- gated thyristor |
| DE19520785C2 (de) * | 1994-06-08 | 2001-12-06 | Fuji Electric Co Ltd | Thyristor mit isoliertem Gate |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2110299B1 (enrdf_load_stackoverflow) | 1976-09-03 |
| AU3396471A (en) | 1973-04-05 |
| CA931661A (en) | 1973-08-07 |
| FR2110299A1 (enrdf_load_stackoverflow) | 1972-06-02 |
| NL7113770A (enrdf_load_stackoverflow) | 1972-04-11 |
| JPS5125116B1 (enrdf_load_stackoverflow) | 1976-07-28 |
| DE2149760A1 (de) | 1972-04-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |