GB1356515A - Non-crucible zone melting of semiconductor rods - Google Patents

Non-crucible zone melting of semiconductor rods

Info

Publication number
GB1356515A
GB1356515A GB3676072A GB3676072A GB1356515A GB 1356515 A GB1356515 A GB 1356515A GB 3676072 A GB3676072 A GB 3676072A GB 3676072 A GB3676072 A GB 3676072A GB 1356515 A GB1356515 A GB 1356515A
Authority
GB
United Kingdom
Prior art keywords
rod
tube
liquid
zone melting
seal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3676072A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2143112A external-priority patent/DE2143112A1/de
Priority claimed from DE19712159916 external-priority patent/DE2159916A1/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1356515A publication Critical patent/GB1356515A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26Stirring of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB3676072A 1971-08-27 1972-08-07 Non-crucible zone melting of semiconductor rods Expired GB1356515A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2143112A DE2143112A1 (de) 1971-08-27 1971-08-27 Verfahren zur erzielung eines gleichmaessigen radialen widerstandsverlaufs beim herstellen eines halbleiter-einkristallstabes durch tiegelfreies zonenschmelzen
DE19712159916 DE2159916A1 (de) 1971-12-02 1971-12-02 Verfahren zur erzielung eines gleichmaessigen radialen widerstandsverlaufs beim herstellen eines halbleitereinkristallstabes durch tiegelfreies zonenschmelzen

Publications (1)

Publication Number Publication Date
GB1356515A true GB1356515A (en) 1974-06-12

Family

ID=25761662

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3676072A Expired GB1356515A (en) 1971-08-27 1972-08-07 Non-crucible zone melting of semiconductor rods

Country Status (6)

Country Link
JP (1) JPS4832467A (enExample)
BE (1) BE788027A (enExample)
FR (1) FR2150860B1 (enExample)
GB (1) GB1356515A (enExample)
IT (1) IT968208B (enExample)
NL (1) NL7209160A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2257428C2 (ru) * 2003-10-27 2005-07-27 Читинский государственный технический университет (Чит ГТУ) Способ получения однородных монокристаллов

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145268A (en) * 1975-06-10 1976-12-14 Nec Home Electronics Ltd Epitaxial semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2257428C2 (ru) * 2003-10-27 2005-07-27 Читинский государственный технический университет (Чит ГТУ) Способ получения однородных монокристаллов

Also Published As

Publication number Publication date
JPS4832467A (enExample) 1973-04-28
IT968208B (it) 1974-03-20
FR2150860A1 (enExample) 1973-04-13
BE788027A (fr) 1972-12-18
NL7209160A (enExample) 1973-03-01
FR2150860B1 (enExample) 1974-08-19

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees