BE788027A - Procede d'obtention d'une allure de resistance radiale uniformedans un barreau semiconducteur monocristallin - Google Patents

Procede d'obtention d'une allure de resistance radiale uniformedans un barreau semiconducteur monocristallin

Info

Publication number
BE788027A
BE788027A BE788027A BE788027A BE788027A BE 788027 A BE788027 A BE 788027A BE 788027 A BE788027 A BE 788027A BE 788027 A BE788027 A BE 788027A BE 788027 A BE788027 A BE 788027A
Authority
BE
Belgium
Prior art keywords
allure
obtaining
crystalline semiconductor
uniform radial
semiconductor bar
Prior art date
Application number
BE788027A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2143112A external-priority patent/DE2143112A1/de
Priority claimed from DE19712159916 external-priority patent/DE2159916A1/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE788027A publication Critical patent/BE788027A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26—Stirring of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE788027A 1971-08-27 1972-08-25 Procede d'obtention d'une allure de resistance radiale uniformedans un barreau semiconducteur monocristallin BE788027A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2143112A DE2143112A1 (de) 1971-08-27 1971-08-27 Verfahren zur erzielung eines gleichmaessigen radialen widerstandsverlaufs beim herstellen eines halbleiter-einkristallstabes durch tiegelfreies zonenschmelzen
DE19712159916 DE2159916A1 (de) 1971-12-02 1971-12-02 Verfahren zur erzielung eines gleichmaessigen radialen widerstandsverlaufs beim herstellen eines halbleitereinkristallstabes durch tiegelfreies zonenschmelzen

Publications (1)

Publication Number Publication Date
BE788027A true BE788027A (fr) 1972-12-18

Family

ID=25761662

Family Applications (1)

Application Number Title Priority Date Filing Date
BE788027A BE788027A (fr) 1971-08-27 1972-08-25 Procede d'obtention d'une allure de resistance radiale uniformedans un barreau semiconducteur monocristallin

Country Status (6)

Country Link
JP (1) JPS4832467A (enExample)
BE (1) BE788027A (enExample)
FR (1) FR2150860B1 (enExample)
GB (1) GB1356515A (enExample)
IT (1) IT968208B (enExample)
NL (1) NL7209160A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145268A (en) * 1975-06-10 1976-12-14 Nec Home Electronics Ltd Epitaxial semiconductor device
RU2257428C2 (ru) * 2003-10-27 2005-07-27 Читинский государственный технический университет (Чит ГТУ) Способ получения однородных монокристаллов

Also Published As

Publication number Publication date
NL7209160A (enExample) 1973-03-01
FR2150860A1 (enExample) 1973-04-13
GB1356515A (en) 1974-06-12
IT968208B (it) 1974-03-20
FR2150860B1 (enExample) 1974-08-19
JPS4832467A (enExample) 1973-04-28

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