GB1349163A - Glass for a protective coating on a semiconductor element - Google Patents

Glass for a protective coating on a semiconductor element

Info

Publication number
GB1349163A
GB1349163A GB2757971A GB2757971A GB1349163A GB 1349163 A GB1349163 A GB 1349163A GB 2757971 A GB2757971 A GB 2757971A GB 2757971 A GB2757971 A GB 2757971A GB 1349163 A GB1349163 A GB 1349163A
Authority
GB
United Kingdom
Prior art keywords
glass
coating
binder
substrate
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2757971A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1349163A publication Critical patent/GB1349163A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

1349163 Coating for semi-conductors HITACHI Ltd 11 June 1971 [15 June 1970] 27579/71 Heading C1M [Also in Division H1] A semi-conductor element has a coating of a glass which consists essentially of at least one oxide of Pb, Zn, B, Si, or Al and has a thermal expansion coefficient acceptably close to that of the substrate, the glass being mixed with 0À01- 15 wt. per cent of at least one oxide of Ti, U, Cr, Mn, Fe, Co, Ni, Cu, Ce, Sn, Sb, or Ta (in a higher of their available valency states) and the coating being applied by a resulting process to dissolve and reduce some of the transition metal ions, thereby reducing the mobility of alkali metal ions at the surface of the gears. The substrate may be of silicon. The coating is formed by grinding a suitable glass to a powder, mixing this with the metal oxide, depositing the mixture on the surface of the substrate and heating to remelt the glass. The metal oxide may be dispersed in an alcohol before mixing with the glass and the mixture may be mixed with a binder, and possibly a solvent for the binder to form a paste for easy application, and the binder and solvent may be removed under vacuum.
GB2757971A 1970-06-15 1971-06-11 Glass for a protective coating on a semiconductor element Expired GB1349163A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45050998A JPS5117028B1 (en) 1970-06-15 1970-06-15

Publications (1)

Publication Number Publication Date
GB1349163A true GB1349163A (en) 1974-03-27

Family

ID=12874442

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2757971A Expired GB1349163A (en) 1970-06-15 1971-06-11 Glass for a protective coating on a semiconductor element

Country Status (3)

Country Link
JP (1) JPS5117028B1 (en)
DE (1) DE2129638A1 (en)
GB (1) GB1349163A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2935421A1 (en) * 1978-09-08 1980-03-20 Philips Nv SCREEN PRINT INK, WHICH IS HEATED IN NON-OXIDIZING ATMOSPHERES
US8163392B2 (en) 2006-12-27 2012-04-24 Schott Ag Method for producing an electronic component passivated by lead free glass
CN105152532A (en) * 2010-01-28 2015-12-16 日本电气硝子株式会社 Glass for semiconductor coating and material for semiconductor coating using the same
US9236318B1 (en) 2013-03-29 2016-01-12 Shindengen Electric Manufacturing Co., Ltd. Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
US11634356B2 (en) 2020-03-13 2023-04-25 Schott Ag Glass and melt solder for the passivation of semiconductor components

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3943013A (en) * 1973-10-11 1976-03-09 General Electric Company Triac with gold diffused boundary
US4168960A (en) * 1978-04-18 1979-09-25 Westinghouse Electric Corp. Method of making a glass encapsulated diode
JPH0628201B2 (en) * 1988-02-18 1994-04-13 住友金属鉱山株式会社 Resistive film forming composition

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2935421A1 (en) * 1978-09-08 1980-03-20 Philips Nv SCREEN PRINT INK, WHICH IS HEATED IN NON-OXIDIZING ATMOSPHERES
US8163392B2 (en) 2006-12-27 2012-04-24 Schott Ag Method for producing an electronic component passivated by lead free glass
CN105152532A (en) * 2010-01-28 2015-12-16 日本电气硝子株式会社 Glass for semiconductor coating and material for semiconductor coating using the same
US9236318B1 (en) 2013-03-29 2016-01-12 Shindengen Electric Manufacturing Co., Ltd. Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
US11634356B2 (en) 2020-03-13 2023-04-25 Schott Ag Glass and melt solder for the passivation of semiconductor components
US11926565B2 (en) 2020-03-13 2024-03-12 Schott Ag Glass and melt solder for the passivation of semiconductor components

Also Published As

Publication number Publication date
JPS5117028B1 (en) 1976-05-29
DE2129638A1 (en) 1972-01-20

Similar Documents

Publication Publication Date Title
GB1347468A (en) Crystal composites
GB1349163A (en) Glass for a protective coating on a semiconductor element
GB1250176A (en)
Foster et al. The Solidus Boundary in the GaP‐InP Pseudobinary System
GB1147412A (en) Process of producing oxide films on substrates
GB1083172A (en) Semiconductive devices and methods of making them
US3060018A (en) Gold base alloy
GB1367262A (en) Thin-layer semiconductor device
SE304462B (en)
JPS55156365A (en) Semiconductor device
GB1537298A (en) Method of producing a metal layer on a substrate
GB1253779A (en) Improvements in or relating to the deposition of gallium phosphide
US3491026A (en) Ferromagnetic-semiconductor composition
GB1326730A (en) Silicon nitride
GB1277281A (en) Improvements relating to the production of large surface area hard solids
JPS5747742A (en) Glass for coating and semiconductor device coated with said glass
GB1243295A (en) Improvements in or relating to the production of thin monocrystalline semiconductor layers
GB1367180A (en) Magneto-optical storage layers
JPS5630731A (en) Au solder for semiconductor element
GB925182A (en) Silver base semiconductor doping alloys
GB1384303A (en) Composite superconductors and process for their manufacture
GB1352202A (en) Semiconductor devices
CA2054694A1 (en) Tin oxide heteropolycondensates with enhanced electrical conductivity
GB1120648A (en) Improvements in processes for heating and melting by high frequency electrical induction
GB1377114A (en) Ferroelectric ceramic compositions

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees