GB1349163A - Glass for a protective coating on a semiconductor element - Google Patents
Glass for a protective coating on a semiconductor elementInfo
- Publication number
- GB1349163A GB1349163A GB2757971A GB2757971A GB1349163A GB 1349163 A GB1349163 A GB 1349163A GB 2757971 A GB2757971 A GB 2757971A GB 2757971 A GB2757971 A GB 2757971A GB 1349163 A GB1349163 A GB 1349163A
- Authority
- GB
- United Kingdom
- Prior art keywords
- glass
- coating
- binder
- substrate
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
- C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
- C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Formation Of Insulating Films (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
1349163 Coating for semi-conductors HITACHI Ltd 11 June 1971 [15 June 1970] 27579/71 Heading C1M [Also in Division H1] A semi-conductor element has a coating of a glass which consists essentially of at least one oxide of Pb, Zn, B, Si, or Al and has a thermal expansion coefficient acceptably close to that of the substrate, the glass being mixed with 0À01- 15 wt. per cent of at least one oxide of Ti, U, Cr, Mn, Fe, Co, Ni, Cu, Ce, Sn, Sb, or Ta (in a higher of their available valency states) and the coating being applied by a resulting process to dissolve and reduce some of the transition metal ions, thereby reducing the mobility of alkali metal ions at the surface of the gears. The substrate may be of silicon. The coating is formed by grinding a suitable glass to a powder, mixing this with the metal oxide, depositing the mixture on the surface of the substrate and heating to remelt the glass. The metal oxide may be dispersed in an alcohol before mixing with the glass and the mixture may be mixed with a binder, and possibly a solvent for the binder to form a paste for easy application, and the binder and solvent may be removed under vacuum.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP45050998A JPS5117028B1 (en) | 1970-06-15 | 1970-06-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1349163A true GB1349163A (en) | 1974-03-27 |
Family
ID=12874442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2757971A Expired GB1349163A (en) | 1970-06-15 | 1971-06-11 | Glass for a protective coating on a semiconductor element |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5117028B1 (en) |
DE (1) | DE2129638A1 (en) |
GB (1) | GB1349163A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2935421A1 (en) * | 1978-09-08 | 1980-03-20 | Philips Nv | SCREEN PRINT INK, WHICH IS HEATED IN NON-OXIDIZING ATMOSPHERES |
US8163392B2 (en) | 2006-12-27 | 2012-04-24 | Schott Ag | Method for producing an electronic component passivated by lead free glass |
CN105152532A (en) * | 2010-01-28 | 2015-12-16 | 日本电气硝子株式会社 | Glass for semiconductor coating and material for semiconductor coating using the same |
US9236318B1 (en) | 2013-03-29 | 2016-01-12 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
US11634356B2 (en) | 2020-03-13 | 2023-04-25 | Schott Ag | Glass and melt solder for the passivation of semiconductor components |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3943013A (en) * | 1973-10-11 | 1976-03-09 | General Electric Company | Triac with gold diffused boundary |
US4168960A (en) * | 1978-04-18 | 1979-09-25 | Westinghouse Electric Corp. | Method of making a glass encapsulated diode |
JPH0628201B2 (en) * | 1988-02-18 | 1994-04-13 | 住友金属鉱山株式会社 | Resistive film forming composition |
-
1970
- 1970-06-15 JP JP45050998A patent/JPS5117028B1/ja active Pending
-
1971
- 1971-06-11 GB GB2757971A patent/GB1349163A/en not_active Expired
- 1971-06-15 DE DE19712129638 patent/DE2129638A1/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2935421A1 (en) * | 1978-09-08 | 1980-03-20 | Philips Nv | SCREEN PRINT INK, WHICH IS HEATED IN NON-OXIDIZING ATMOSPHERES |
US8163392B2 (en) | 2006-12-27 | 2012-04-24 | Schott Ag | Method for producing an electronic component passivated by lead free glass |
CN105152532A (en) * | 2010-01-28 | 2015-12-16 | 日本电气硝子株式会社 | Glass for semiconductor coating and material for semiconductor coating using the same |
US9236318B1 (en) | 2013-03-29 | 2016-01-12 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
US11634356B2 (en) | 2020-03-13 | 2023-04-25 | Schott Ag | Glass and melt solder for the passivation of semiconductor components |
US11926565B2 (en) | 2020-03-13 | 2024-03-12 | Schott Ag | Glass and melt solder for the passivation of semiconductor components |
Also Published As
Publication number | Publication date |
---|---|
JPS5117028B1 (en) | 1976-05-29 |
DE2129638A1 (en) | 1972-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1347468A (en) | Crystal composites | |
GB1349163A (en) | Glass for a protective coating on a semiconductor element | |
GB1250176A (en) | ||
Foster et al. | The Solidus Boundary in the GaP‐InP Pseudobinary System | |
GB1147412A (en) | Process of producing oxide films on substrates | |
GB1083172A (en) | Semiconductive devices and methods of making them | |
US3060018A (en) | Gold base alloy | |
GB1367262A (en) | Thin-layer semiconductor device | |
SE304462B (en) | ||
JPS55156365A (en) | Semiconductor device | |
GB1537298A (en) | Method of producing a metal layer on a substrate | |
GB1253779A (en) | Improvements in or relating to the deposition of gallium phosphide | |
US3491026A (en) | Ferromagnetic-semiconductor composition | |
GB1326730A (en) | Silicon nitride | |
GB1277281A (en) | Improvements relating to the production of large surface area hard solids | |
JPS5747742A (en) | Glass for coating and semiconductor device coated with said glass | |
GB1243295A (en) | Improvements in or relating to the production of thin monocrystalline semiconductor layers | |
GB1367180A (en) | Magneto-optical storage layers | |
JPS5630731A (en) | Au solder for semiconductor element | |
GB925182A (en) | Silver base semiconductor doping alloys | |
GB1384303A (en) | Composite superconductors and process for their manufacture | |
GB1352202A (en) | Semiconductor devices | |
CA2054694A1 (en) | Tin oxide heteropolycondensates with enhanced electrical conductivity | |
GB1120648A (en) | Improvements in processes for heating and melting by high frequency electrical induction | |
GB1377114A (en) | Ferroelectric ceramic compositions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |