GB1349106A - Apparatus for the non-crucible zone melting of semiconductor rods - Google Patents

Apparatus for the non-crucible zone melting of semiconductor rods

Info

Publication number
GB1349106A
GB1349106A GB3247372A GB3247372A GB1349106A GB 1349106 A GB1349106 A GB 1349106A GB 3247372 A GB3247372 A GB 3247372A GB 3247372 A GB3247372 A GB 3247372A GB 1349106 A GB1349106 A GB 1349106A
Authority
GB
United Kingdom
Prior art keywords
coil
rod
vessel
zone melting
heating coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3247372A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1349106A publication Critical patent/GB1349106A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/28—Tubular capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
GB3247372A 1971-08-17 1972-07-12 Apparatus for the non-crucible zone melting of semiconductor rods Expired GB1349106A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2141188A DE2141188C3 (de) 1971-08-17 1971-08-17 Vorrichtung für das tiegellose Zonenschmelzen

Publications (1)

Publication Number Publication Date
GB1349106A true GB1349106A (en) 1974-03-27

Family

ID=5816983

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3247372A Expired GB1349106A (en) 1971-08-17 1972-07-12 Apparatus for the non-crucible zone melting of semiconductor rods

Country Status (8)

Country Link
US (1) US3769484A (https=)
JP (1) JPS5522439B2 (https=)
BE (1) BE787668A (https=)
DE (1) DE2141188C3 (https=)
FR (1) FR2149483B1 (https=)
GB (1) GB1349106A (https=)
IT (1) IT963844B (https=)
NL (1) NL7208496A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425468C3 (de) * 1974-05-27 1979-01-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegellosen Zonenschmelzen eines kristallisierbaren Stabes
DE2538812A1 (de) * 1975-09-01 1977-03-03 Wacker Chemitronic Verfahren zum dotieren von halbleiterstaeben
JPS5290543A (en) * 1976-01-23 1977-07-29 Iwao Hishida Granular compositions of waxes
DE2700856A1 (de) * 1977-01-11 1978-07-13 Raphael Dr Leonhardt Vorrichtung zum zuechten von kristallen oder fuer dgl. verfahren
JPS6114114U (ja) * 1984-07-02 1986-01-27 マツダ株式会社 モ−ル取付用クリツプ
JP2503077B2 (ja) * 1989-07-05 1996-06-05 日本碍子株式会社 電気ヒ―タ及びそれを用いた加熱方法
US20130112134A1 (en) * 2009-02-23 2013-05-09 Giga Industries, Inc. Method and Systems for Characterization and Production of High Quality Silicon
EP3057184B1 (de) * 2015-02-11 2017-01-25 MD Elektronik GmbH Verfahren und Vorrichtung zum Herstellen eines Kabels sowie ein nach dem Verfahren hergestelltes Kabel

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1076623B (de) * 1957-11-15 1960-03-03 Siemens Ag Vorrichtung zum tiegelfreien Zonenziehen von stabfoermigem Halbleitermaterial
US3339130A (en) * 1964-07-02 1967-08-29 Gen Motors Corp Capacitor means
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
DE1916317C3 (de) * 1969-03-29 1975-07-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Stromzuführung für eine Induktionsspule beim tiegelfreien Zonenschmelzen

Also Published As

Publication number Publication date
DE2141188B2 (de) 1979-01-11
DE2141188C3 (de) 1979-09-13
FR2149483A1 (https=) 1973-03-30
BE787668A (fr) 1972-12-18
JPS4829607A (https=) 1973-04-19
US3769484A (en) 1973-10-30
DE2141188A1 (de) 1973-02-22
FR2149483B1 (https=) 1976-01-23
NL7208496A (https=) 1973-02-20
IT963844B (it) 1974-01-21
JPS5522439B2 (https=) 1980-06-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees