GB1338370A - Method of fabricating nitrides of gallium and indium - Google Patents
Method of fabricating nitrides of gallium and indiumInfo
- Publication number
- GB1338370A GB1338370A GB4015872A GB4015872A GB1338370A GB 1338370 A GB1338370 A GB 1338370A GB 4015872 A GB4015872 A GB 4015872A GB 4015872 A GB4015872 A GB 4015872A GB 1338370 A GB1338370 A GB 1338370A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- gallium
- indium
- target
- nitrides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052733 gallium Inorganic materials 0.000 title abstract 5
- 229910052738 indium Inorganic materials 0.000 title abstract 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 229910002601 GaN Inorganic materials 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 1
- 229910018540 Si C Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000005350 fused silica glass Substances 0.000 abstract 1
- -1 indium nitrides Chemical class 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000008022 sublimation Effects 0.000 abstract 1
- 238000000859 sublimation Methods 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18440571A | 1971-09-28 | 1971-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1338370A true GB1338370A (en) | 1973-11-21 |
Family
ID=22676735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4015872A Expired GB1338370A (en) | 1971-09-28 | 1972-08-30 | Method of fabricating nitrides of gallium and indium |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4840699A (enrdf_load_stackoverflow) |
| DE (1) | DE2243153A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2154459B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1338370A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2180262A (en) * | 1985-09-05 | 1987-03-25 | Plessey Co Plc | Forming substances by reactive sputtering |
| GB2181461A (en) * | 1985-10-10 | 1987-04-23 | Canadian Patents Dev | Depositing semiconductor compounds by reactive sputtering |
| GB2182350A (en) * | 1985-07-01 | 1987-05-13 | Atomic Energy Authority Uk | Sputter ion plating |
| GB2178061B (en) * | 1985-07-01 | 1989-04-26 | Atomic Energy Authority Uk | Coating improvements |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5031028B1 (enrdf_load_stackoverflow) * | 1968-08-15 | 1975-10-06 | ||
| US3878085A (en) * | 1973-07-05 | 1975-04-15 | Sloan Technology Corp | Cathode sputtering apparatus |
| DE3316548C2 (de) * | 1983-03-25 | 1985-01-17 | Flachglas AG, 8510 Fürth | Verfahren zur Beschichtung eines transparenten Substrates |
-
1972
- 1972-08-29 FR FR7231325A patent/FR2154459B1/fr not_active Expired
- 1972-08-30 GB GB4015872A patent/GB1338370A/en not_active Expired
- 1972-09-01 DE DE19722243153 patent/DE2243153A1/de active Pending
- 1972-09-13 JP JP9135872A patent/JPS4840699A/ja active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2182350A (en) * | 1985-07-01 | 1987-05-13 | Atomic Energy Authority Uk | Sputter ion plating |
| GB2178061B (en) * | 1985-07-01 | 1989-04-26 | Atomic Energy Authority Uk | Coating improvements |
| GB2182350B (en) * | 1985-07-01 | 1989-04-26 | Atomic Energy Authority Uk | Coating improvements |
| GB2180262A (en) * | 1985-09-05 | 1987-03-25 | Plessey Co Plc | Forming substances by reactive sputtering |
| GB2180262B (en) * | 1985-09-05 | 1990-05-09 | Plessey Co Plc | Methods of forming substances on substrates by reactive sputtering |
| GB2181461A (en) * | 1985-10-10 | 1987-04-23 | Canadian Patents Dev | Depositing semiconductor compounds by reactive sputtering |
| GB2181461B (en) * | 1985-10-10 | 1989-09-27 | Canadian Patents Dev | Doping semiconductor compounds by reactive sputtering |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2243153A1 (de) | 1973-04-05 |
| FR2154459B1 (enrdf_load_stackoverflow) | 1974-08-19 |
| JPS4840699A (enrdf_load_stackoverflow) | 1973-06-14 |
| FR2154459A1 (enrdf_load_stackoverflow) | 1973-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1476079A (en) | Planar magnetron sputtering apparatus | |
| GB1338370A (en) | Method of fabricating nitrides of gallium and indium | |
| GB1181560A (en) | Improvements relating to Sputtering. | |
| GB1128603A (en) | Production of protective films on solid substrates | |
| GB1501263A (en) | Method of producing a p-n or an n-p junction | |
| JPH11509273A (ja) | 永久磁石配列装置とその方法 | |
| GB1151643A (en) | Method Of Making Schottky-Barrier Diodes | |
| GB1366146A (en) | Magnetic storage devices | |
| ES348482A1 (es) | Perfeccionamientos en la construccion de capas isotropas defuerte campo coercitivo. | |
| GB1239044A (enrdf_load_stackoverflow) | ||
| KR910007776B1 (ko) | 자기기록체의 제조방법 | |
| GB1242492A (en) | Improvements relating to the coating of a substrate by r.f. sputtering | |
| GB1149370A (en) | Improvements relating to the radio frequency sputtering of materials | |
| JPS567231A (en) | Vapor deposition film type magnetic recording material and its production | |
| GB1358411A (en) | Sputtering | |
| GB1301653A (enrdf_load_stackoverflow) | ||
| GB1181559A (en) | Improvements in or relating to the Deposition of Insulating Films of Silicon Nitride. | |
| GB985034A (en) | Improvements in and relating to magneto-optic media | |
| GB1160813A (en) | Ferromagnetic Films | |
| GB1181101A (en) | Improvements in or relating to the Epitaxial Deposition of a Semiconductor Material | |
| Kay | Magnetic thin films prepared by sputtering | |
| GB1269408A (en) | Sputter deposition on an irregular surface | |
| GB1354809A (en) | Photomask | |
| GB1084696A (en) | Method for preparing thin films of rare earth chalcogenides | |
| Hatwar et al. | Effect of argon sputtering pressure on the magnetic properties and morphology of TbFeCo films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |