GB1336985A - Method of making a bistable resistor - Google Patents

Method of making a bistable resistor

Info

Publication number
GB1336985A
GB1336985A GB4615872A GB4615872A GB1336985A GB 1336985 A GB1336985 A GB 1336985A GB 4615872 A GB4615872 A GB 4615872A GB 4615872 A GB4615872 A GB 4615872A GB 1336985 A GB1336985 A GB 1336985A
Authority
GB
United Kingdom
Prior art keywords
layer
stable
active region
electrode
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4615872A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1336985A publication Critical patent/GB1336985A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Adjustable Resistors (AREA)
  • Semiconductor Memories (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
GB4615872A 1971-12-30 1972-10-06 Method of making a bistable resistor Expired GB1336985A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21415971A 1971-12-30 1971-12-30

Publications (1)

Publication Number Publication Date
GB1336985A true GB1336985A (en) 1973-11-14

Family

ID=22797995

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4615872A Expired GB1336985A (en) 1971-12-30 1972-10-06 Method of making a bistable resistor

Country Status (5)

Country Link
US (1) US3795977A (enExample)
JP (1) JPS5525517B2 (enExample)
DE (1) DE2259682A1 (enExample)
FR (1) FR2169919B1 (enExample)
GB (1) GB1336985A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913218A (en) * 1974-06-04 1975-10-21 Us Army Tunnel emitter photocathode
JPS56165371A (en) * 1980-05-26 1981-12-18 Shunpei Yamazaki Semiconductor device
DE3929847A1 (de) * 1989-09-08 1991-05-08 Ernst Prof Dr Ing Lueder Verfahren zur herstellung eines elektronischen schaltelementes
US6730984B1 (en) * 2000-11-14 2004-05-04 International Business Machines Corporation Increasing an electrical resistance of a resistor by oxidation or nitridization
US6756296B2 (en) * 2001-12-11 2004-06-29 California Institute Of Technology Method for lithographic processing on molecular monolayer and multilayer thin films
CN1860609A (zh) * 2004-07-22 2006-11-08 日本电信电话株式会社 双稳态电阻值获得器件、其制造方法、金属氧化物薄膜及其制造方法
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
JPWO2007023569A1 (ja) * 2005-08-26 2009-03-26 富士通株式会社 不揮発性半導体記憶装置及びその書き込み方法
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US8233308B2 (en) * 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US20090104756A1 (en) * 2007-06-29 2009-04-23 Tanmay Kumar Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7902537B2 (en) 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US8143092B2 (en) * 2008-03-10 2012-03-27 Pragati Kumar Methods for forming resistive switching memory elements by heating deposited layers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2887632A (en) * 1952-04-16 1959-05-19 Timefax Corp Zinc oxide semiconductors and methods of manufacture
US3390012A (en) * 1964-05-14 1968-06-25 Texas Instruments Inc Method of making dielectric bodies having conducting portions
US3324531A (en) * 1965-03-29 1967-06-13 Gen Electric Solid state electronic devices, method and apparatus
US3634927A (en) * 1968-11-29 1972-01-18 Energy Conversion Devices Inc Method of selective wiring of integrated electronic circuits and the article formed thereby
US3564353A (en) * 1969-04-16 1971-02-16 Westinghouse Electric Corp Bulk semiconductor switching device formed from amorphous glass type substance and having symmetrical switching characteristics
US3714633A (en) * 1970-08-21 1973-01-30 Massachusetts Inst Technology Single and polycrystalline semiconductors
US3656029A (en) * 1970-12-31 1972-04-11 Ibm BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT
JPS5637486B2 (enExample) * 1972-07-27 1981-09-01

Also Published As

Publication number Publication date
FR2169919B1 (enExample) 1974-08-02
JPS5525517B2 (enExample) 1980-07-07
JPS504986A (enExample) 1975-01-20
DE2259682A1 (de) 1973-07-05
US3795977A (en) 1974-03-12
FR2169919A1 (enExample) 1973-09-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee