GB1334345A - Etching - Google Patents

Etching

Info

Publication number
GB1334345A
GB1334345A GB2581072A GB2581072A GB1334345A GB 1334345 A GB1334345 A GB 1334345A GB 2581072 A GB2581072 A GB 2581072A GB 2581072 A GB2581072 A GB 2581072A GB 1334345 A GB1334345 A GB 1334345A
Authority
GB
United Kingdom
Prior art keywords
substrate
predetermined depth
etched
june
hydrofluoric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2581072A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1334345A publication Critical patent/GB1334345A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H10W74/40—

Landscapes

  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB2581072A 1971-06-17 1972-06-02 Etching Expired GB1334345A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15410271A 1971-06-17 1971-06-17

Publications (1)

Publication Number Publication Date
GB1334345A true GB1334345A (en) 1973-10-17

Family

ID=22550006

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2581072A Expired GB1334345A (en) 1971-06-17 1972-06-02 Etching

Country Status (5)

Country Link
US (1) US3767493A (enExample)
JP (1) JPS5235514B1 (enExample)
DE (1) DE2226264C2 (enExample)
FR (1) FR2141936B1 (enExample)
GB (1) GB1334345A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107742644A (zh) * 2017-10-30 2018-02-27 中山大学 一种高性能常关型的GaN场效应晶体管及其制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4279690A (en) * 1975-10-28 1981-07-21 Texas Instruments Incorporated High-radiance emitters with integral microlens
US4472240A (en) * 1981-08-21 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device
US4353778A (en) * 1981-09-04 1982-10-12 International Business Machines Corporation Method of etching polyimide
US7078160B2 (en) * 2003-06-26 2006-07-18 Intel Corporation Selective surface exposure, cleans, and conditioning of the germanium film in a Ge photodetector
US9698121B2 (en) * 2014-01-27 2017-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and structures for packaging semiconductor dies

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching
US3576630A (en) * 1966-10-29 1971-04-27 Nippon Electric Co Photo-etching process
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
US3542551A (en) * 1968-07-01 1970-11-24 Trw Semiconductors Inc Method of etching patterns into solid state devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107742644A (zh) * 2017-10-30 2018-02-27 中山大学 一种高性能常关型的GaN场效应晶体管及其制备方法
CN107742644B (zh) * 2017-10-30 2024-05-28 中山大学 一种高性能常关型的GaN场效应晶体管及其制备方法

Also Published As

Publication number Publication date
JPS5235514B1 (enExample) 1977-09-09
DE2226264A1 (de) 1972-12-21
DE2226264C2 (de) 1985-10-10
FR2141936B1 (enExample) 1978-03-03
FR2141936A1 (enExample) 1973-01-26
US3767493A (en) 1973-10-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee