GB1420155A - Etching silicon nitride patterns - Google Patents

Etching silicon nitride patterns

Info

Publication number
GB1420155A
GB1420155A GB2017173A GB2017173A GB1420155A GB 1420155 A GB1420155 A GB 1420155A GB 2017173 A GB2017173 A GB 2017173A GB 2017173 A GB2017173 A GB 2017173A GB 1420155 A GB1420155 A GB 1420155A
Authority
GB
United Kingdom
Prior art keywords
silicon nitride
semi
etching silicon
nitride patterns
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2017173A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB2017173A priority Critical patent/GB1420155A/en
Publication of GB1420155A publication Critical patent/GB1420155A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Abstract

1420155 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 27 April 1973 20171/73 Heading H1K [Also in Division B6] A semi-conductor device is produced by providing a layer of silicon nitride on a substrate containing a semi-conductive III-V compound, or a substrate of gallium aluminium arsenide or gallium phosphide, and locally etching away the silicon nitride through a developed photo-resist with an etchant comprising hydrofluoric acid, phosphoric acid and ammonium fluoride.
GB2017173A 1973-04-27 1973-04-27 Etching silicon nitride patterns Expired GB1420155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2017173A GB1420155A (en) 1973-04-27 1973-04-27 Etching silicon nitride patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2017173A GB1420155A (en) 1973-04-27 1973-04-27 Etching silicon nitride patterns

Publications (1)

Publication Number Publication Date
GB1420155A true GB1420155A (en) 1976-01-07

Family

ID=10141566

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2017173A Expired GB1420155A (en) 1973-04-27 1973-04-27 Etching silicon nitride patterns

Country Status (1)

Country Link
GB (1) GB1420155A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0342092A1 (en) * 1988-05-10 1989-11-15 Rhone-Poulenc Chimie Process for treatment of ceramic fibers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0342092A1 (en) * 1988-05-10 1989-11-15 Rhone-Poulenc Chimie Process for treatment of ceramic fibers
FR2631334A1 (en) * 1988-05-10 1989-11-17 Rhone Poulenc Chimie PROCESS FOR THE TREATMENT OF CERAMIC FIBERS, BASED ON SILICON, NITROGEN AND / OR CARBON TO IMPROVE THE SURFACE CHARACTERISTICS

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee