GB1332586A - Simultaneous production of a plurality of identical semiconduc tor components each having a p-n junction from a single semico nductor wafer - Google Patents

Simultaneous production of a plurality of identical semiconduc tor components each having a p-n junction from a single semico nductor wafer

Info

Publication number
GB1332586A
GB1332586A GB3675471A GB3675471A GB1332586A GB 1332586 A GB1332586 A GB 1332586A GB 3675471 A GB3675471 A GB 3675471A GB 3675471 A GB3675471 A GB 3675471A GB 1332586 A GB1332586 A GB 1332586A
Authority
GB
United Kingdom
Prior art keywords
wafer
voltage
positive
components
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3675471A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1332586A publication Critical patent/GB1332586A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P74/235—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices
    • H10P14/47—
    • H10P14/6309—
    • H10P14/6324—
    • H10P50/613—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Weting (AREA)
GB3675471A 1970-08-18 1971-08-05 Simultaneous production of a plurality of identical semiconduc tor components each having a p-n junction from a single semico nductor wafer Expired GB1332586A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2041035A DE2041035C2 (de) 1970-08-18 1970-08-18 Verfahren zum gleichzeitigen elektrolytischen in bezug auf die Sperrfähigkeit selektiven Behandeln von mehreren in einer gemeinsamen Halbleiterscheibe erzeugten gleichen Halbleiterbauelementen

Publications (1)

Publication Number Publication Date
GB1332586A true GB1332586A (en) 1973-10-03

Family

ID=5780094

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3675471A Expired GB1332586A (en) 1970-08-18 1971-08-05 Simultaneous production of a plurality of identical semiconduc tor components each having a p-n junction from a single semico nductor wafer

Country Status (10)

Country Link
US (1) US3738917A (enExample)
JP (1) JPS579217B1 (enExample)
AT (1) AT337779B (enExample)
CA (1) CA932880A (enExample)
CH (1) CH524827A (enExample)
DE (1) DE2041035C2 (enExample)
FR (1) FR2102327B1 (enExample)
GB (1) GB1332586A (enExample)
NL (1) NL7111385A (enExample)
SE (1) SE376685B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2207012C2 (de) * 1972-02-15 1985-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Kontaktierung von Halbleiterbauelementen
US3987538A (en) * 1973-12-26 1976-10-26 Texas Instruments Incorporated Method of making devices having closely spaced electrodes
US4080721A (en) * 1975-06-30 1978-03-28 International Business Machines Corporation Fabrication of semiconductor device
US4125440A (en) * 1977-07-25 1978-11-14 International Business Machines Corporation Method for non-destructive testing of semiconductor articles
US4306951A (en) * 1980-05-30 1981-12-22 International Business Machines Corporation Electrochemical etching process for semiconductors
FR3120569B1 (fr) 2021-03-10 2024-04-26 Psa Automobiles Sa Procédé de gestion du fonctionnement d’une interface homme-machine d’un appareillage de gestion du fonctionnement d’un vitrage adaptatif d’un véhicule automobile, système et véhicule automobile associés

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1432035A (fr) * 1964-03-30 1966-03-18 Gen Electric Perfectionnements aux méthodes de contrôle de semiconducteurs

Also Published As

Publication number Publication date
DE2041035A1 (de) 1972-02-24
US3738917A (en) 1973-06-12
DE2041035C2 (de) 1982-10-28
CA932880A (en) 1973-08-28
CH524827A (de) 1972-06-30
FR2102327B1 (enExample) 1977-03-18
JPS579217B1 (enExample) 1982-02-20
FR2102327A1 (enExample) 1972-04-07
SE376685B (enExample) 1975-06-02
NL7111385A (enExample) 1972-02-22
ATA658871A (de) 1976-11-15
AT337779B (de) 1977-07-25

Similar Documents

Publication Publication Date Title
US2793420A (en) Electrical contacts to silicon
US3280019A (en) Method of selectively coating semiconductor chips
US4466864A (en) Methods of and apparatus for electroplating preselected surface regions of electrical articles
US4144139A (en) Method of plating by means of light
US3634203A (en) Thin film metallization processes for microcircuits
US3741880A (en) Method of forming electrical connections in a semiconductor integrated circuit
US3013955A (en) Method of transistor manufacture
US2189576A (en) Dry plate rectifier and method of producing same
US3993515A (en) Method of forming raised electrical contacts on a semiconductor device
US2362228A (en) Method of forming contacts on metal oxide-metal rectifiers
US2901412A (en) Apparatus for anodizing aluminum surfaces
US3351825A (en) Semiconductor device having an anodized protective film thereon and method of manufacturing same
GB1332586A (en) Simultaneous production of a plurality of identical semiconduc tor components each having a p-n junction from a single semico nductor wafer
US3010885A (en) Method for electrolytically etching and thereafter anodically oxidizing an essentially monocrystalline semiconductor body having a p-n junction
US4883774A (en) Silver flashing process on semiconductor leadframes
US3472711A (en) Charged particle detector
US3096262A (en) Method of making thin slices of semiconductive material
GB1247466A (en) Method for determining excess carrier lifetime in semiconductor devices
US3894919A (en) Contacting semiconductors during electrolytic oxidation
DE2348182C3 (de) Verfahren zur galvanischen Abscheidung einer Metallschicht auf der Oberfläche eines Halbleiterkörpers
US2291592A (en) Electrical rectifier
US3254275A (en) Silicon semiconductor device having particular doping concentrations
US3419480A (en) Anodic oxidation
US4009481A (en) Metal semiconductor diode
JPS60128615A (ja) 半導体ウエハの電解メツキ方法

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee