GB1320560A - Etchants for silica - Google Patents

Etchants for silica

Info

Publication number
GB1320560A
GB1320560A GB4833370A GB4833370A GB1320560A GB 1320560 A GB1320560 A GB 1320560A GB 4833370 A GB4833370 A GB 4833370A GB 4833370 A GB4833370 A GB 4833370A GB 1320560 A GB1320560 A GB 1320560A
Authority
GB
United Kingdom
Prior art keywords
etching
oct
silica
etchants
fluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4833370A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1320560A publication Critical patent/GB1320560A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Hall/Mr Elements (AREA)
  • Silicon Compounds (AREA)
GB4833370A 1969-10-15 1970-10-12 Etchants for silica Expired GB1320560A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691951968 DE1951968A1 (de) 1969-10-15 1969-10-15 AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten

Publications (1)

Publication Number Publication Date
GB1320560A true GB1320560A (en) 1973-06-13

Family

ID=5748277

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4833370A Expired GB1320560A (en) 1969-10-15 1970-10-12 Etchants for silica

Country Status (8)

Country Link
US (1) US3671437A (https=)
JP (1) JPS5013113B1 (https=)
BE (1) BE757512A (https=)
DE (1) DE1951968A1 (https=)
FR (1) FR2064339B1 (https=)
GB (1) GB1320560A (https=)
NL (1) NL7014891A (https=)
SE (1) SE357214B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2147315A (en) * 1983-09-30 1985-05-09 American Chem & Refining Co Thallium-containing composition for stripping palladium

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1423448A (en) * 1973-07-18 1976-02-04 Plessey Co Ltd Method of selectively etching silicon nitride
US3920471A (en) * 1974-10-10 1975-11-18 Teletype Corp Prevention of aluminum etching during silox photoshaping
US4022424A (en) * 1975-09-29 1977-05-10 General Electric Company Shaft bearing and seals for butterfly valves
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
US5695661A (en) 1995-06-07 1997-12-09 Micron Display Technology, Inc. Silicon dioxide etch process which protects metal
US5876879A (en) * 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
US6074951A (en) * 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US5838055A (en) * 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
JP3678212B2 (ja) * 2002-05-20 2005-08-03 ウシオ電機株式会社 超高圧水銀ランプ
US8226840B2 (en) 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
KR20230002523A (ko) * 2020-03-31 2023-01-05 더 유니버시티 오브 시드니 정렬된 섬유 및 그의 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1002026A (fr) * 1946-07-16 1952-03-03 Standard Francaise Petroles Procédé d'inhibition de l'action corrosive des acides halogencs et notamment de l'acide chlorhydrique vis-à-vis des métaux
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2147315A (en) * 1983-09-30 1985-05-09 American Chem & Refining Co Thallium-containing composition for stripping palladium

Also Published As

Publication number Publication date
FR2064339A1 (https=) 1971-07-23
JPS5013113B1 (https=) 1975-05-16
DE1951968A1 (de) 1971-04-22
US3671437A (en) 1972-06-20
BE757512A (fr) 1971-04-14
SE357214B (https=) 1973-06-18
FR2064339B1 (https=) 1977-01-21
NL7014891A (https=) 1971-04-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee