GB1195944A - Etching Silicon Oxide Material. - Google Patents
Etching Silicon Oxide Material.Info
- Publication number
- GB1195944A GB1195944A GB1130068A GB1130068A GB1195944A GB 1195944 A GB1195944 A GB 1195944A GB 1130068 A GB1130068 A GB 1130068A GB 1130068 A GB1130068 A GB 1130068A GB 1195944 A GB1195944 A GB 1195944A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- silicon oxide
- resist
- copper
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052814 silicon oxide Inorganic materials 0.000 title abstract 4
- 238000005530 etching Methods 0.000 title abstract 3
- 239000000463 material Substances 0.000 title abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052802 copper Inorganic materials 0.000 abstract 3
- 239000010949 copper Substances 0.000 abstract 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 239000012286 potassium permanganate Substances 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229960000583 acetic acid Drugs 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000004070 electrodeposition Methods 0.000 abstract 1
- 239000012362 glacial acetic acid Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
1,195,944. Etching silicon oxide material. INTERNATIONAL BUSINESS MACHINES CORP. 8 March, 1968, No. 11300/68. Heading B6J. [Also in Division H1] Silicon oxide materials, especially of silicon monoxide, are etched by aqueous solutions containing hydrofluoric acid and potassium permanganate at temperatures between 10 and 60‹ C. The solutions preferably contain between 50 and 300 grams/litre of hydrofluoric acid and between 1 and 15 gms./litre of potassium permanganate, optionally in the presence of glacial acetic acid or phosphoric acid. The etohant is particularly useful in the construction of printed circuits, wherein the silicon oxide is coated with a metal layer and a photo-resist which are substantially unaffected by the etchant. In particular, a workpiece, Fig. 1, which comprises a substrate 1 of copper, a layer 2 of chromium, a silicon monoxide layer 3, a copper layer 4 and a photo-resist 5 may be provided with an aperture 6 by washing away the resist 5 in the exposed areas, etching through layer 4 with FeCl 3 , through layer 3 with HF/KMnO 4 and through layer 2 with K 3 Fe(CN) 6 , before electro-deposition of copper therein.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1130068A GB1195944A (en) | 1968-03-08 | 1968-03-08 | Etching Silicon Oxide Material. |
| FR1602847D FR1602847A (en) | 1968-03-08 | 1968-12-30 | Etching solution for use in manufacture of - micro circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1130068A GB1195944A (en) | 1968-03-08 | 1968-03-08 | Etching Silicon Oxide Material. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1195944A true GB1195944A (en) | 1970-06-24 |
Family
ID=9983697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1130068A Expired GB1195944A (en) | 1968-03-08 | 1968-03-08 | Etching Silicon Oxide Material. |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1602847A (en) |
| GB (1) | GB1195944A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4372803A (en) * | 1980-09-26 | 1983-02-08 | The United States Of America As Represented By The Secretary Of The Navy | Method for etch thinning silicon devices |
| EP0032174B1 (en) * | 1979-12-20 | 1984-07-25 | Ibm Deutschland Gmbh | Method of doping silicium substrates by diffusion of boron and use of this method for the manufacture of the base zones of bipolar transistors |
| US7446051B2 (en) | 2003-09-09 | 2008-11-04 | Csg Solar Ag | Method of etching silicon |
| US7585781B2 (en) | 2003-09-09 | 2009-09-08 | Csg Solar Ag | Method of forming openings in an organic resin material |
| US7592201B2 (en) | 2003-09-09 | 2009-09-22 | Csg Solar Ag | Adjustments of masks by re-flow |
| US7624742B1 (en) | 2004-04-05 | 2009-12-01 | Quantum Global Technologies, Llc. | Method for removing aluminum fluoride contamination from aluminum-containing surfaces of semiconductor process equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2004271223B2 (en) * | 2003-09-09 | 2010-02-18 | Csg Solar Ag | Improved method of etching silicon |
-
1968
- 1968-03-08 GB GB1130068A patent/GB1195944A/en not_active Expired
- 1968-12-30 FR FR1602847D patent/FR1602847A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0032174B1 (en) * | 1979-12-20 | 1984-07-25 | Ibm Deutschland Gmbh | Method of doping silicium substrates by diffusion of boron and use of this method for the manufacture of the base zones of bipolar transistors |
| US4372803A (en) * | 1980-09-26 | 1983-02-08 | The United States Of America As Represented By The Secretary Of The Navy | Method for etch thinning silicon devices |
| US7446051B2 (en) | 2003-09-09 | 2008-11-04 | Csg Solar Ag | Method of etching silicon |
| US7585781B2 (en) | 2003-09-09 | 2009-09-08 | Csg Solar Ag | Method of forming openings in an organic resin material |
| US7592201B2 (en) | 2003-09-09 | 2009-09-22 | Csg Solar Ag | Adjustments of masks by re-flow |
| US7960206B2 (en) | 2003-09-09 | 2011-06-14 | Csg Solar Ag | Adjustment of masks by re-flow |
| US7624742B1 (en) | 2004-04-05 | 2009-12-01 | Quantum Global Technologies, Llc. | Method for removing aluminum fluoride contamination from aluminum-containing surfaces of semiconductor process equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1602847A (en) | 1971-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |