GB1320560A - Etchants for silica - Google Patents
Etchants for silicaInfo
- Publication number
- GB1320560A GB1320560A GB4833370A GB4833370A GB1320560A GB 1320560 A GB1320560 A GB 1320560A GB 4833370 A GB4833370 A GB 4833370A GB 4833370 A GB4833370 A GB 4833370A GB 1320560 A GB1320560 A GB 1320560A
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- oct
- silica
- etchants
- fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 239000000377 silicon dioxide Substances 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 1
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 229960002594 arsenic trioxide Drugs 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- CULOEOTWMUCRSJ-UHFFFAOYSA-M thallium(i) fluoride Chemical compound [Tl]F CULOEOTWMUCRSJ-UHFFFAOYSA-M 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Hall/Mr Elements (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691951968 DE1951968A1 (de) | 1969-10-15 | 1969-10-15 | AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1320560A true GB1320560A (en) | 1973-06-13 |
Family
ID=5748277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4833370A Expired GB1320560A (en) | 1969-10-15 | 1970-10-12 | Etchants for silica |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3671437A (enExample) |
| JP (1) | JPS5013113B1 (enExample) |
| BE (1) | BE757512A (enExample) |
| DE (1) | DE1951968A1 (enExample) |
| FR (1) | FR2064339B1 (enExample) |
| GB (1) | GB1320560A (enExample) |
| NL (1) | NL7014891A (enExample) |
| SE (1) | SE357214B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2147315A (en) * | 1983-09-30 | 1985-05-09 | American Chem & Refining Co | Thallium-containing composition for stripping palladium |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1423448A (en) * | 1973-07-18 | 1976-02-04 | Plessey Co Ltd | Method of selectively etching silicon nitride |
| US3920471A (en) * | 1974-10-10 | 1975-11-18 | Teletype Corp | Prevention of aluminum etching during silox photoshaping |
| US4022424A (en) * | 1975-09-29 | 1977-05-10 | General Electric Company | Shaft bearing and seals for butterfly valves |
| US5277835A (en) * | 1989-06-26 | 1994-01-11 | Hashimoto Chemical Industries Co., Ltd. | Surface treatment agent for fine surface treatment |
| US5695661A (en) | 1995-06-07 | 1997-12-09 | Micron Display Technology, Inc. | Silicon dioxide etch process which protects metal |
| US6074951A (en) * | 1997-05-29 | 2000-06-13 | International Business Machines Corporation | Vapor phase etching of oxide masked by resist or masking material |
| US5876879A (en) * | 1997-05-29 | 1999-03-02 | International Business Machines Corporation | Oxide layer patterned by vapor phase etching |
| US5838055A (en) * | 1997-05-29 | 1998-11-17 | International Business Machines Corporation | Trench sidewall patterned by vapor phase etching |
| JP3678212B2 (ja) * | 2002-05-20 | 2005-08-03 | ウシオ電機株式会社 | 超高圧水銀ランプ |
| US8226840B2 (en) | 2008-05-02 | 2012-07-24 | Micron Technology, Inc. | Methods of removing silicon dioxide |
| AU2021250464A1 (en) * | 2020-03-31 | 2022-11-17 | The University Of Sydney | Aligned fibres and a method of making the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1002026A (fr) * | 1946-07-16 | 1952-03-03 | Standard Francaise Petroles | Procédé d'inhibition de l'action corrosive des acides halogencs et notamment de l'acide chlorhydrique vis-à-vis des métaux |
| US3474021A (en) * | 1966-01-12 | 1969-10-21 | Ibm | Method of forming openings using sequential sputtering and chemical etching |
-
1969
- 1969-10-15 DE DE19691951968 patent/DE1951968A1/de not_active Ceased
-
1970
- 1970-10-10 NL NL7014891A patent/NL7014891A/xx unknown
- 1970-10-12 GB GB4833370A patent/GB1320560A/en not_active Expired
- 1970-10-12 SE SE13774/70A patent/SE357214B/xx unknown
- 1970-10-12 JP JP45088886A patent/JPS5013113B1/ja active Pending
- 1970-10-13 FR FR7036892A patent/FR2064339B1/fr not_active Expired
- 1970-10-14 BE BE70@@@@@@@@A patent/BE757512A/xx unknown
- 1970-10-16 US US81523A patent/US3671437A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2147315A (en) * | 1983-09-30 | 1985-05-09 | American Chem & Refining Co | Thallium-containing composition for stripping palladium |
Also Published As
| Publication number | Publication date |
|---|---|
| US3671437A (en) | 1972-06-20 |
| BE757512A (fr) | 1971-04-14 |
| FR2064339A1 (enExample) | 1971-07-23 |
| SE357214B (enExample) | 1973-06-18 |
| NL7014891A (enExample) | 1971-04-19 |
| FR2064339B1 (enExample) | 1977-01-21 |
| DE1951968A1 (de) | 1971-04-22 |
| JPS5013113B1 (enExample) | 1975-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1320560A (en) | Etchants for silica | |
| GB1332702A (en) | Photomasks | |
| GB1231644A (enExample) | ||
| GB1249360A (en) | Lead assembly and method of making the same | |
| DE3669896D1 (de) | Hochkonzentrierte natriumpermanganatloesung und ihre anwendung beim entgraten und/oder aetzen gedruckter schaltungen. | |
| GB1246193A (en) | Method of manufacturing a glass article having light-dispersing surface layer | |
| GB1445659A (en) | Method of etching silicon oxide to produce a tapered edge thereon | |
| GB1194730A (en) | Improvements in or relating to Etching Processes for Semiconductor Devices | |
| GB1430044A (en) | Etching palladium films | |
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| GB8621855D0 (en) | Phosphate solutions | |
| GB1273150A (en) | Improvements in and relating to methods of etching semiconductor body surfaces | |
| GB962335A (en) | An improved etching fluid and method of etching | |
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| GB1527106A (en) | Method of etching multilayered articles | |
| GB1294585A (en) | Improved photomasks and method of fabrication thereof | |
| GB1209889A (en) | Improvements relating to processes for etching silicon nitride | |
| GB1440349A (en) | Method of manufacturing etched patterns | |
| GB1504264A (en) | Etching of tantalum layers | |
| JPS5310974A (en) | Etching method of oxide film | |
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| CA2023712A1 (en) | Selective etching process | |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |