GB1320560A - Etchants for silica - Google Patents

Etchants for silica

Info

Publication number
GB1320560A
GB1320560A GB4833370A GB4833370A GB1320560A GB 1320560 A GB1320560 A GB 1320560A GB 4833370 A GB4833370 A GB 4833370A GB 4833370 A GB4833370 A GB 4833370A GB 1320560 A GB1320560 A GB 1320560A
Authority
GB
United Kingdom
Prior art keywords
etching
oct
silica
etchants
fluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4833370A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1320560A publication Critical patent/GB1320560A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Hall/Mr Elements (AREA)
  • Silicon Compounds (AREA)
GB4833370A 1969-10-15 1970-10-12 Etchants for silica Expired GB1320560A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691951968 DE1951968A1 (de) 1969-10-15 1969-10-15 AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten

Publications (1)

Publication Number Publication Date
GB1320560A true GB1320560A (en) 1973-06-13

Family

ID=5748277

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4833370A Expired GB1320560A (en) 1969-10-15 1970-10-12 Etchants for silica

Country Status (8)

Country Link
US (1) US3671437A (enExample)
JP (1) JPS5013113B1 (enExample)
BE (1) BE757512A (enExample)
DE (1) DE1951968A1 (enExample)
FR (1) FR2064339B1 (enExample)
GB (1) GB1320560A (enExample)
NL (1) NL7014891A (enExample)
SE (1) SE357214B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2147315A (en) * 1983-09-30 1985-05-09 American Chem & Refining Co Thallium-containing composition for stripping palladium

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1423448A (en) * 1973-07-18 1976-02-04 Plessey Co Ltd Method of selectively etching silicon nitride
US3920471A (en) * 1974-10-10 1975-11-18 Teletype Corp Prevention of aluminum etching during silox photoshaping
US4022424A (en) * 1975-09-29 1977-05-10 General Electric Company Shaft bearing and seals for butterfly valves
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
US5695661A (en) 1995-06-07 1997-12-09 Micron Display Technology, Inc. Silicon dioxide etch process which protects metal
US6074951A (en) * 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US5876879A (en) * 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
US5838055A (en) * 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
JP3678212B2 (ja) * 2002-05-20 2005-08-03 ウシオ電機株式会社 超高圧水銀ランプ
US8226840B2 (en) 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
AU2021250464A1 (en) * 2020-03-31 2022-11-17 The University Of Sydney Aligned fibres and a method of making the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1002026A (fr) * 1946-07-16 1952-03-03 Standard Francaise Petroles Procédé d'inhibition de l'action corrosive des acides halogencs et notamment de l'acide chlorhydrique vis-à-vis des métaux
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2147315A (en) * 1983-09-30 1985-05-09 American Chem & Refining Co Thallium-containing composition for stripping palladium

Also Published As

Publication number Publication date
US3671437A (en) 1972-06-20
BE757512A (fr) 1971-04-14
FR2064339A1 (enExample) 1971-07-23
SE357214B (enExample) 1973-06-18
NL7014891A (enExample) 1971-04-19
FR2064339B1 (enExample) 1977-01-21
DE1951968A1 (de) 1971-04-22
JPS5013113B1 (enExample) 1975-05-16

Similar Documents

Publication Publication Date Title
GB1320560A (en) Etchants for silica
GB1332702A (en) Photomasks
GB1231644A (enExample)
GB1249360A (en) Lead assembly and method of making the same
DE3669896D1 (de) Hochkonzentrierte natriumpermanganatloesung und ihre anwendung beim entgraten und/oder aetzen gedruckter schaltungen.
GB1246193A (en) Method of manufacturing a glass article having light-dispersing surface layer
GB1445659A (en) Method of etching silicon oxide to produce a tapered edge thereon
GB1194730A (en) Improvements in or relating to Etching Processes for Semiconductor Devices
GB1430044A (en) Etching palladium films
JPS52116074A (en) Electronic part
GB8621855D0 (en) Phosphate solutions
GB1273150A (en) Improvements in and relating to methods of etching semiconductor body surfaces
GB962335A (en) An improved etching fluid and method of etching
GB1066366A (en) Process for the production of printing plates
JPS5322836A (en) Method of etching aluminum and aluminum oxide with gas
GB1527106A (en) Method of etching multilayered articles
GB1294585A (en) Improved photomasks and method of fabrication thereof
GB1209889A (en) Improvements relating to processes for etching silicon nitride
GB1440349A (en) Method of manufacturing etched patterns
GB1504264A (en) Etching of tantalum layers
JPS5310974A (en) Etching method of oxide film
GB1531648A (en) Method of manufacturing a body having a gold pattern and body manufactured according to the method
CA2023712A1 (en) Selective etching process
JPS52122479A (en) Etching solution of silicon
GB1506961A (en) Method of etching a pattern in glass

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee