JPS5322836A - Method of etching aluminum and aluminum oxide with gas - Google Patents

Method of etching aluminum and aluminum oxide with gas

Info

Publication number
JPS5322836A
JPS5322836A JP9230477A JP9230477A JPS5322836A JP S5322836 A JPS5322836 A JP S5322836A JP 9230477 A JP9230477 A JP 9230477A JP 9230477 A JP9230477 A JP 9230477A JP S5322836 A JPS5322836 A JP S5322836A
Authority
JP
Japan
Prior art keywords
aluminum
gas
etching
aluminum oxide
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9230477A
Other languages
Japanese (ja)
Other versions
JPS5745310B2 (en
Inventor
Aibuaa Jiyosefu Ingur Shidonii
Jiyosefu Nentouitsuchi Hainzu
Goodon Poorusen Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=4106655&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5322836(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of JPS5322836A publication Critical patent/JPS5322836A/en
Publication of JPS5745310B2 publication Critical patent/JPS5745310B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP9230477A 1976-08-16 1977-08-02 Method of etching aluminum and aluminum oxide with gas Granted JPS5322836A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA259,126A CA1059882A (en) 1976-08-16 1976-08-16 Gaseous plasma etching of aluminum and aluminum oxide

Publications (2)

Publication Number Publication Date
JPS5322836A true JPS5322836A (en) 1978-03-02
JPS5745310B2 JPS5745310B2 (en) 1982-09-27

Family

ID=4106655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9230477A Granted JPS5322836A (en) 1976-08-16 1977-08-02 Method of etching aluminum and aluminum oxide with gas

Country Status (7)

Country Link
JP (1) JPS5322836A (en)
CA (1) CA1059882A (en)
DE (1) DE2730156C2 (en)
FR (1) FR2362216A1 (en)
GB (1) GB1554335A (en)
NL (1) NL7706627A (en)
SE (1) SE7709165L (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118172A (en) * 1978-03-06 1979-09-13 Nichiden Varian Kk Method of dry etching aluminum
JPS5521198A (en) * 1978-07-31 1980-02-15 Western Electric Co Method of manufacturing semiconductor device
JPS5941841A (en) * 1982-07-26 1984-03-08 エイ・ティ・アンド・ティ・コーポレーション Method of producing device
JPH07230993A (en) * 1994-02-15 1995-08-29 Nec Corp Wiring forming method of semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4256534A (en) * 1978-07-31 1981-03-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
DE2924475A1 (en) * 1979-06-18 1981-01-15 Siemens Ag Metallising of semiconductor crystals - where semiconductor is covered with metal and then with metal oxide which aids the adhesion of photolacquer masks
JPS5623745A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Plasma etching device
US4341593A (en) * 1979-08-17 1982-07-27 Tokuda Seisakusyo, Ltd. Plasma etching method for aluminum-based films
JPS5747876A (en) * 1980-09-03 1982-03-18 Toshiba Corp Plasma etching apparatus and method
DE3103177A1 (en) * 1981-01-30 1982-08-26 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING POLYSILIZIUM STRUCTURES UP TO THE 1 (MY) M AREA ON SUBSTRATES CONTAINING INTEGRATED SEMICONDUCTOR CIRCUITS BY PLASMA
US9520303B2 (en) * 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118172A (en) * 1978-03-06 1979-09-13 Nichiden Varian Kk Method of dry etching aluminum
JPS5521198A (en) * 1978-07-31 1980-02-15 Western Electric Co Method of manufacturing semiconductor device
JPS5922374B2 (en) * 1978-07-31 1984-05-26 ウエスタ−ン エレクトリック カムパニ−・インコ−ポレ−テッド Device manufacturing method using plasma etching
JPS5941841A (en) * 1982-07-26 1984-03-08 エイ・ティ・アンド・ティ・コーポレーション Method of producing device
JPH07230993A (en) * 1994-02-15 1995-08-29 Nec Corp Wiring forming method of semiconductor device

Also Published As

Publication number Publication date
JPS5745310B2 (en) 1982-09-27
GB1554335A (en) 1979-10-17
DE2730156A1 (en) 1978-02-23
SE7709165L (en) 1978-02-17
DE2730156C2 (en) 1986-01-16
NL7706627A (en) 1978-02-20
CA1059882A (en) 1979-08-07
FR2362216A1 (en) 1978-03-17

Similar Documents

Publication Publication Date Title
JPS52139366A (en) Method of forming interface between metal and semiconductor
JPS5344899A (en) Metal oxide varistor and method of manufacture thereof
JPS52122835A (en) Metallhalogen battery and method of operating it
JPS52120772A (en) Method of etching and apparatus therefor
JPS5359478A (en) Converter and method of forming converter
JPS538334A (en) Method of etching aluminum or aluminum alloy and etching composition therefor
JPS5322836A (en) Method of etching aluminum and aluminum oxide with gas
JPS5392366A (en) Method and device of forming metal structure
JPS5383585A (en) Semiconductor structure and method of producing same
JPS52115703A (en) Method of reducing metallic oxide
JPS5384495A (en) Semiconductor electrode and method of forming same
JPS5331984A (en) Semiconductor structure and method of producing same
AU6726381A (en) Removing oxides of nitrogen from gases and forming nitrites and nitrites therefrom
JPS52112272A (en) Crt and method of manufacturing same
JPS5297366A (en) Simultaneous removal of nitric oxide and sulfuric oxide from gas streams
JPS5348797A (en) Gas sensor containing metal oxide and method of preparating and using the sensor
JPS52132418A (en) Selffenclosing tube and manufacturing method of it
JPS5336384A (en) Selffsealing envelope and method of manufacturing the same
JPS52133043A (en) Method of etching aluminum
JPS52141444A (en) Method of etching aluminum
JPS5419436A (en) Colored aluminum oxide and method of producing same
JPS52132503A (en) Antifreeze method of face of slope and so on
JPS5384463A (en) Aluminum oxide substrate structure and method of producing same
JPS531616A (en) Aluminium base alloy and method of making the same
JPS52103337A (en) Method of etching aluminum and aluminum alloy