DE2924475A1 - Metallising of semiconductor crystals - where semiconductor is covered with metal and then with metal oxide which aids the adhesion of photolacquer masks - Google Patents

Metallising of semiconductor crystals - where semiconductor is covered with metal and then with metal oxide which aids the adhesion of photolacquer masks

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Publication number
DE2924475A1
DE2924475A1 DE19792924475 DE2924475A DE2924475A1 DE 2924475 A1 DE2924475 A1 DE 2924475A1 DE 19792924475 DE19792924475 DE 19792924475 DE 2924475 A DE2924475 A DE 2924475A DE 2924475 A1 DE2924475 A1 DE 2924475A1
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Prior art keywords
layer
metal
semiconductor
covered
oxide
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Ceased
Application number
DE19792924475
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German (de)
Inventor
Nicholas Dr Rer Nat Kokkotakis
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Siemens AG
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Siemens AG
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Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19792924475 priority Critical patent/DE2924475A1/en
Publication of DE2924475A1 publication Critical patent/DE2924475A1/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A semiconductor crystal or wafer is covered by a layer of metal (I) and then with metal oxide (Ia). Layers (I,Ia) are next partly covered by a layer of photolacquer to leave bare zones of layers (I,Ia) which are removed. Layer (Ia) is pref. formed by oxidn. of metal (I), esp. by anodic oxidn. Alternatively, layer (Ia) is pref. formed by sputtering. In either case, layer (Ia) pref. consists of alumina. Used esp. in mfg. monolithic integrated circuits, where the formation of oxide (Ia) greatly improves the adhesion of the photolacquer.

Description

Verfahren zum Herstellen einer Metallisierung aufMethod for producing a metallization

einem Halbleiterkristall Die Erfindung betrifft ein Verfahren zum Herstellen einer Metallisierung auf einem Halbleiterkristall, bei dem die Oberfläche eines Halbleiterkristalls mit einer Metallschicht versehen, diese Metallschicht mit einer Photolackschicht partiell abgedeckt und schließlich die von der Photolackschicht nicht bedeckten Stellen der Metallschicht entfernt werden.a semiconductor crystal The invention relates to a method for Production of a metallization on a semiconductor crystal, in which the surface of a semiconductor crystal is provided with a metal layer, this metal layer partially covered with a photoresist layer and finally that of the photoresist layer uncovered areas of the metal layer are removed.

Ein solches Verfahren ist in der Halbleitertechnik, zum Beispiel bei der Herstellung monolithisch integrierter Halbleiterschaltkreise, allgemein üblich. Es wird vor allem auch bei der Erzeugung monolithisch integrierter Schaltkreise angewendet.One such method is in semiconductor technology, for example at the production of monolithically integrated semiconductor circuits, common practice. It is especially used in the production of monolithic integrated circuits applied.

In der DE-AS 24 55 357.9 ist ein Halbleiterbauelement mit mindestens einem eine Schaltungsfunktion aufweisenden Halbleiterkörper beschrieben, dessen Oberfläche mit einer Isolierschicht bedeckt ist, bei dem sich über der Isolierschicht mindestens eine Kunstharzschicht befindet und auf dieser beziehungsweise zwischen diesen Jeweils eine metallische Laeiterschicht angeordnet ist. Als kennzeichnende Maßnahme ist dabei vorgesehen, daß zur Verbesserung der Haftung zwischen den übereinanderliegenden Schichten Jeweils eine Metalloxydschicht angeordnet ist, die aus Aluminiumoxyd, Titanoxyd, Molybdänoxyd, Chromoxyd oder Nickeloxyd besteht.In DE-AS 24 55 357.9 a semiconductor component with at least a semiconductor body having a circuit function described, whose Surface is covered with an insulating layer, in which the Insulating layer at least one synthetic resin layer is located and on this or between A metallic Laleiterschicht is arranged in each case. As a distinctive Measure is provided that to improve the adhesion between the superimposed Layers In each case a metal oxide layer is arranged, which is made of aluminum oxide, Titanium oxide, molybdenum oxide, chromium oxide or nickel oxide.

Wie nun gemäß der Erfindung erkannt wurde, läßt sich die Haftfestigkeit von Photolackätzmasken auf ihrer metallischen Unterlage erheblich verbessern, wenn bei dem eingangs definierten Verfahren die zu ätzende Metallisierung an der mit der Photolackmaske in Kontakt zu bringenden Oberfläche vorher mit# einem dünnen Überzug aus Metalloxyd versehen wird.As has now been recognized according to the invention, the adhesive strength of photoresist etching masks on their metallic base significantly improve, if in the method defined at the outset, the metallization to be etched on the with the surface to be brought into contact with the photoresist mask beforehand with # a thin Metal oxide coating is provided.

Demzufolge ist daR erfindungsgemäße Verfahren dadurch gekennzeichnet, daß vor dem Aufbringen der Photolackschicht die Oberfläche der Metallschicht mit einer Bedeckung aus Metalloxyd versehen wird.Accordingly, the method according to the invention is characterized in that that before the application of the photoresist layer, the surface of the metal layer with a cover made of metal oxide is provided.

Da die Metallisierung zumeist erst in einer fortgeschrittenen Phase der Gesamtfertigung erfolgt und eine starke Erwärmung der zu behandelnden Halbleitervorrichtung dann möglichst zu vermeiden ist, empfiehlt es sich, die Metalloxydbedeckung durch partielle anodische Oxydation der aufgebrachten Metallschicht zu erzeugen. Insbesondere eignet sich diese Methode, wenn die zu bedekkende Oberfläche der Metallisierung aus Aluminium besteht.Since the metallization is usually only in an advanced phase the entire manufacturing takes place and a strong heating of the semiconductor device to be treated Then if possible to avoid, it is advisable to cover the metal oxide through to produce partial anodic oxidation of the applied metal layer. In particular this method is suitable if the surface to be covered is metallization is made of aluminum.

Die Durchführung der Erfindung wird an Hand eines Ausführrngsbeispiels beschrieben. Die mit der zu formenden Metallisierung zu versehende Halbleitervorrichtung be- steht in der Hauptsache aus einem scheibenförmfgen Halbleiterkristall, insbesondere Siliciumkristall, der in vorangegangenen Verfahrensschritten mit den erforderlichen pn-Ubergängen sowie isolierenden Schutzschichten, insbesondere SiO2- und/oder Si3N4-Schichten, sowie mit den durch die Schutzschichten zur Halbleiteroberfläche hindurchgeführten Kontaktierungsfenstern versehen ißt> Die auf diese Weise geformte Oberfläche des zu behandelnden Halbleiterkörpers wird zunächst mit einer oder mehreren übereinanderliegenden Metallschichten durch Aufdampfen oder Aufstäuben oder durch galvanische Abscheidung versehen. Vorzugsweise besteht die Metallschicht beziehungsweise bei Verwendung mehrerer Schichten die oberste Metallschicht aus Aluminium. Die Metallschicht wird zweckmäßig auf eine Stärke von etwa 400 AE eingestellt.The implementation of the invention is based on an exemplary embodiment described. The semiconductor device to be provided with the metallization to be formed loading consists mainly of a disk-shaped semiconductor crystal, in particular silicon crystal, which in previous process steps with the required pn junctions as well as insulating protective layers, in particular SiO2- and / or Si3N4 layers, as well as through the protective layers to the semiconductor surface provided through contacting windows> the shaped in this way The surface of the semiconductor body to be treated is first coated with one or more superimposed metal layers by vapor deposition or sputtering or by galvanic deposition. The metal layer is preferably made up respectively if several layers are used, the top metal layer made of aluminum. The metal layer is expediently set to a strength of about 400 AU.

Dann wird die Oberfläche der Metallisierung mit der dünnen, zum Beispiel 600 AE dicken Metalloxydschicht versehen, was insbesondere im Falle der Verwendung einer Metallisierung aus Aluminium durch anodische Oxydation der Oberfläche der Metallisierung geschieht.Then the surface of the metallization with the thin, for example 600 AU thick metal oxide layer, which is particularly important in the case of use a metallization of aluminum by anodic oxidation of the surface of the Metallization happens.

Als Elektrolyt eignet sich hierzu zum Beispiel Phosphorsaure, Oxalsäure, Chromsäure, Schwefelsäure. Die anodische Oxydation wird zweckmäßig mit einer Konstantstromquelle oder einer Stromquelle mit fester konstanter Betriebsspannung bei einer so niedrigen Temperatur vorgenommen, daß sich kein nennenswerter Einfluß auf die Eigenschaften der bereits im Inneren des Halbleiterkörpers erzeugten pn-Übergänge und so weiter ausbilden kann.Suitable electrolytes for this are, for example, phosphoric acid, oxalic acid, Chromic acid, sulfuric acid. The anodic oxidation is expedient with a constant current source or a power source with a fixed constant operating voltage at such a low one Temperature made that there is no significant influence on the properties the pn junctions already generated inside the semiconductor body and so on can train.

Im allgemeinen genügt zum Beispiel bei Verwendung eines Elektrolyten aus 2%iger H2S04 und bei einer Stromdichte von 1 mAl cm2 eine Behandlungsdauer von etwa 20 Minuten, damit sich eine Oxydschicht von mindestens 300 bis 400 AE Xum an der Oberfläche der Metallisierung ausbilden kann.In general, for example, an electrolyte is sufficient from 2% H2S04 and with a current density of 1 mAl cm2 a treatment time of about 20 minutes for an oxide layer of at least 300 to 400 AU Xum to form the surface of the metallization can form.

Die Oxydschicht kann auch auf andere Weise, zum Beispiel durch Aufsputtern, erzeugt werden.The oxide layer can also be applied in other ways, for example by sputtering, be generated.

Die mit der Oxydschicht versehene Metallisierung wird in üblicher Weise mit einer Photolackschicht abgedeckt, die dann durch lokalisierte Belichtung mit anschließendem Entwickeln in die gewünschte Photolackätzmaske übergeführt wird. Die nicht von dieser abgedeckten Teile der Metallisierung werden in üblicher Weise, das heißt unter Anwendung eines chemischen Ätzmittels oder durch Plasmaätzung entfernt, während die von der Photolackätzmaske abgedeckten Teile der Metallisierung erhalten bleiben.The metallization provided with the oxide layer is more common Way covered with a layer of photoresist, which is then localized exposure is converted into the desired photoresist etching mask with subsequent development. The parts of the metallization that are not covered by this are usually i.e. removed using a chemical etchant or plasma etching, while the parts of the metallization covered by the photoresist etch mask are retained stay.

Sie bilden Elektroden, Leitbahnen, Abschirmungen und so weiter der fertiggestellten Halbleitervorrichtung. Die Photolackmaske wird schließlich in üblicher Weise von der Oberfläche der behandelten Metallisierung entfernt.They form electrodes, conductive paths, shields and so on completed semiconductor device. The photoresist mask eventually becomes more common Way removed from the surface of the treated metallization.

Der Vorteil des Verfahrens ist, daß auch feinste Strukturen der Metallisierung mit wohl definierten Kanten erzeugt werden können.The advantage of the process is that even the finest structures of the metallization can be generated with well-defined edges.

Die Oxydschicht auf der Metallisierung besteht, wie bereits aus den vorherigen Ausführungen ersichtlich, bevorzugt aus Al203. Die Sputtertechnik erlaubt es, eine Oxydschicht aus Al203 auch dann anzuwenden, wenn die Metallisierung an der mit der Oxydschicht zu versehen- den Oberseite nicht aus Aluminium, sondern aus einem anderen Metall besteht. Anderseits kann aber auch die Oxydschicht aus dem Oxyd eises anderen Metalls, zum Beispiel Titanoxyd oder Chromoxyd bestehen, nämlich vor allem dann, wenn die Metallisierung aus dem einem solchen Oxyd zugrunde liegenden Metall besteht.The oxide layer on the metallization consists, as already of the previous statements, preferably made of Al203. The sputtering technology allows it is to use an oxide layer of Al203 even when the metallization is on to be provided with the oxide layer the top is not made of aluminum, but consists of a different metal. On the other hand, however, the oxide layer can also consist of the oxide of another metal, for example titanium oxide or chromium oxide, namely especially when the metallization is based on such an oxide lying metal.

4 Patentansprüche4 claims

Claims (4)

Patentansprüche öl. Verfahren zum Herstellen einer Metallisierung auf einem Halbleiterkristall, bei dem die Oberfläche eines Haibleiterkristalis mit einer Metallschicht versehen, diese Metallschicht mit einer Photolackschicht partiell abgedeckt und schließlich die von der Photolackschicht nicht bedeckten Stellen der Metallschicht entfernt werden, d a d u r c h g e k e n n z e i c h n e t, daß vor dem Aufbringen der Photolackschicht die Oberfläche der Metallschicht mit einer Bedeckung aus Metalloxyd versehen wird.Claims oil. Process for producing a metallization on a semiconductor crystal, in which the surface of a semiconductor crystal with provided with a metal layer, this metal layer partially with a photoresist layer covered and finally the areas not covered by the photoresist layer Metal layer must be removed, indicating that this is not the case applying the photoresist layer to the surface of the metal layer with a covering made of metal oxide. 2. Verfahren nach Anspruch 1, d a d u r c h g e -k e n n z e i c h n e t , daß die Metalloxydschicht durch Oxydation, insbesondere durch anodische Oxydation des oberen Teils der Metallschicht erzeugt wird.2. The method according to claim 1, d a d u r c h g e -k e n n z e i c h n e t that the metal oxide layer by oxidation, in particular by anodic Oxidation of the upper part of the metal layer is generated. 3. Verfahren nach Anspruch 1 oder 2, d a d u r c h g e k e n n z e i c h n e t , daß die Metalloxydschicht durch Aufstäuben (Aufsputtern) auf der Metallschicht abgeschieden wird.3. The method according to claim 1 or 2, d a d u r c h g e k e n n z e i c h n e t that the metal oxide layer by dusting (sputtering) on the metal layer is deposited. 4. Verfahren nach den Ansprüchen 1 bis 3, d a -d u r c h g e k e n n z e i c h n e t , daß als Material für die Metalloxydschicht Aluminiumoxyd verwendet wird.4. The method according to claims 1 to 3, d a -d u r c h g e k e n It is not noted that aluminum oxide is used as the material for the metal oxide layer will.
DE19792924475 1979-06-18 1979-06-18 Metallising of semiconductor crystals - where semiconductor is covered with metal and then with metal oxide which aids the adhesion of photolacquer masks Ceased DE2924475A1 (en)

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Application Number Priority Date Filing Date Title
DE19792924475 DE2924475A1 (en) 1979-06-18 1979-06-18 Metallising of semiconductor crystals - where semiconductor is covered with metal and then with metal oxide which aids the adhesion of photolacquer masks

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DE19792924475 DE2924475A1 (en) 1979-06-18 1979-06-18 Metallising of semiconductor crystals - where semiconductor is covered with metal and then with metal oxide which aids the adhesion of photolacquer masks

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098582A2 (en) * 1982-07-05 1984-01-18 Kabushiki Kaisha Toshiba Method for patterning layer having high reflectance using photosensitive material

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615953A (en) * 1968-12-17 1971-10-26 Bryan H Hill Etch-retarding oxide films as a mask for etching
DE2455357B2 (en) * 1974-04-15 1977-08-04 Hitachi, Ltd, Tokio SEMICONDUCTOR COMPONENT AND METHOD FOR ITS PRODUCTION
DE2730156A1 (en) * 1976-08-16 1978-02-23 Northern Telecom Ltd GAS-PLASMA ETCHING OF ALUMINUM AND ALUMINUM OXIDE

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615953A (en) * 1968-12-17 1971-10-26 Bryan H Hill Etch-retarding oxide films as a mask for etching
DE2455357B2 (en) * 1974-04-15 1977-08-04 Hitachi, Ltd, Tokio SEMICONDUCTOR COMPONENT AND METHOD FOR ITS PRODUCTION
DE2730156A1 (en) * 1976-08-16 1978-02-23 Northern Telecom Ltd GAS-PLASMA ETCHING OF ALUMINUM AND ALUMINUM OXIDE

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Solid State Technology", Dez. 1976, S. 5-66 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098582A2 (en) * 1982-07-05 1984-01-18 Kabushiki Kaisha Toshiba Method for patterning layer having high reflectance using photosensitive material
EP0098582A3 (en) * 1982-07-05 1986-05-07 Kabushiki Kaisha Toshiba Method for patterning layer having high reflectance using photosensitive material
US4714668A (en) * 1982-07-05 1987-12-22 Tokyo Shibaura Denki Kabushiki Kaisha Method for patterning layer having high reflectance using photosensitive material

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