GB1320416A - Manufacture of hollow bodies of semiconductor material - Google Patents
Manufacture of hollow bodies of semiconductor materialInfo
- Publication number
- GB1320416A GB1320416A GB4663370A GB4663370A GB1320416A GB 1320416 A GB1320416 A GB 1320416A GB 4663370 A GB4663370 A GB 4663370A GB 4663370 A GB4663370 A GB 4663370A GB 1320416 A GB1320416 A GB 1320416A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rate
- semi
- conductor
- deposited
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 239000000463 material Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000151 deposition Methods 0.000 abstract 5
- 230000008021 deposition Effects 0.000 abstract 4
- 229910003902 SiCl 4 Inorganic materials 0.000 abstract 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000011541 reaction mixture Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910000039 hydrogen halide Inorganic materials 0.000 abstract 1
- 239000012433 hydrogen halide Substances 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702016339 DE2016339C3 (de) | 1970-04-06 | 1970-04-06 | Verfahren zum Herstellen eines Hohlkörpers aus Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1320416A true GB1320416A (en) | 1973-06-13 |
Family
ID=5767232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4663370A Expired GB1320416A (en) | 1970-04-06 | 1970-10-01 | Manufacture of hollow bodies of semiconductor material |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5121937B1 (cs) |
| AT (1) | AT338874B (cs) |
| CA (1) | CA942639A (cs) |
| CH (1) | CH537985A (cs) |
| CS (1) | CS172916B2 (cs) |
| DE (1) | DE2016339C3 (cs) |
| FR (1) | FR2092249A5 (cs) |
| GB (1) | GB1320416A (cs) |
| NL (1) | NL7014606A (cs) |
| SE (1) | SE354975B (cs) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5331407A (en) * | 1976-09-02 | 1978-03-24 | Canon Kk | Printer |
| US4491604A (en) * | 1982-12-27 | 1985-01-01 | Lesk Israel A | Silicon deposition process |
| CN103510156A (zh) | 2012-06-29 | 2014-01-15 | 三菱综合材料株式会社 | 多晶硅棒 |
-
1970
- 1970-04-06 DE DE19702016339 patent/DE2016339C3/de not_active Expired
- 1970-07-24 JP JP6442970A patent/JPS5121937B1/ja active Pending
- 1970-09-25 AT AT869470A patent/AT338874B/de active
- 1970-09-25 CH CH1421770A patent/CH537985A/de not_active IP Right Cessation
- 1970-09-30 SE SE1329970A patent/SE354975B/xx unknown
- 1970-10-01 GB GB4663370A patent/GB1320416A/en not_active Expired
- 1970-10-05 NL NL7014606A patent/NL7014606A/xx unknown
- 1970-10-05 CS CS671870A patent/CS172916B2/cs unknown
- 1970-10-15 FR FR7037304A patent/FR2092249A5/fr not_active Expired
- 1970-10-23 CA CA096,382A patent/CA942639A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5121937B1 (cs) | 1976-07-06 |
| FR2092249A5 (cs) | 1971-01-21 |
| NL7014606A (cs) | 1971-10-08 |
| CS172916B2 (cs) | 1977-01-28 |
| ATA869470A (de) | 1977-01-15 |
| AT338874B (de) | 1977-09-26 |
| DE2016339A1 (de) | 1971-10-21 |
| CH537985A (de) | 1973-06-15 |
| DE2016339C3 (de) | 1979-12-13 |
| SE354975B (cs) | 1973-04-02 |
| DE2016339B2 (de) | 1979-04-19 |
| CA942639A (en) | 1974-02-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |