CA942639A - Manufacture of hollow bodies of semiconductor material - Google Patents

Manufacture of hollow bodies of semiconductor material

Info

Publication number
CA942639A
CA942639A CA096,382A CA96382A CA942639A CA 942639 A CA942639 A CA 942639A CA 96382 A CA96382 A CA 96382A CA 942639 A CA942639 A CA 942639A
Authority
CA
Canada
Prior art keywords
manufacture
semiconductor material
hollow bodies
bodies
hollow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA096,382A
Other languages
English (en)
Inventor
Konrad Reuschel
Wolfgang Dietze
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA942639A publication Critical patent/CA942639A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA096,382A 1970-04-06 1970-10-23 Manufacture of hollow bodies of semiconductor material Expired CA942639A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702016339 DE2016339C3 (de) 1970-04-06 1970-04-06 Verfahren zum Herstellen eines Hohlkörpers aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
CA942639A true CA942639A (en) 1974-02-26

Family

ID=5767232

Family Applications (1)

Application Number Title Priority Date Filing Date
CA096,382A Expired CA942639A (en) 1970-04-06 1970-10-23 Manufacture of hollow bodies of semiconductor material

Country Status (10)

Country Link
JP (1) JPS5121937B1 (cs)
AT (1) AT338874B (cs)
CA (1) CA942639A (cs)
CH (1) CH537985A (cs)
CS (1) CS172916B2 (cs)
DE (1) DE2016339C3 (cs)
FR (1) FR2092249A5 (cs)
GB (1) GB1320416A (cs)
NL (1) NL7014606A (cs)
SE (1) SE354975B (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5331407A (en) * 1976-09-02 1978-03-24 Canon Kk Printer
US4491604A (en) * 1982-12-27 1985-01-01 Lesk Israel A Silicon deposition process
CN103510156A (zh) 2012-06-29 2014-01-15 三菱综合材料株式会社 多晶硅棒

Also Published As

Publication number Publication date
JPS5121937B1 (cs) 1976-07-06
FR2092249A5 (cs) 1971-01-21
NL7014606A (cs) 1971-10-08
CS172916B2 (cs) 1977-01-28
ATA869470A (de) 1977-01-15
AT338874B (de) 1977-09-26
DE2016339A1 (de) 1971-10-21
CH537985A (de) 1973-06-15
DE2016339C3 (de) 1979-12-13
GB1320416A (en) 1973-06-13
SE354975B (cs) 1973-04-02
DE2016339B2 (de) 1979-04-19

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