GB1317014A - Contact system for semiconductor devices - Google Patents

Contact system for semiconductor devices

Info

Publication number
GB1317014A
GB1317014A GB3238870A GB3238870A GB1317014A GB 1317014 A GB1317014 A GB 1317014A GB 3238870 A GB3238870 A GB 3238870A GB 3238870 A GB3238870 A GB 3238870A GB 1317014 A GB1317014 A GB 1317014A
Authority
GB
United Kingdom
Prior art keywords
layers
layer
sio
deposited
july
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3238870A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1317014A publication Critical patent/GB1317014A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Die Bonding (AREA)
GB3238870A 1969-07-11 1970-07-03 Contact system for semiconductor devices Expired GB1317014A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84105369A 1969-07-11 1969-07-11

Publications (1)

Publication Number Publication Date
GB1317014A true GB1317014A (en) 1973-05-16

Family

ID=25283899

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3238870A Expired GB1317014A (en) 1969-07-11 1970-07-03 Contact system for semiconductor devices

Country Status (6)

Country Link
US (1) US3632436A (enExample)
JP (1) JPS5417631B1 (enExample)
BE (1) BE752608A (enExample)
DE (1) DE2033532C3 (enExample)
FR (1) FR2051687B1 (enExample)
GB (1) GB1317014A (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753774A (en) * 1971-04-05 1973-08-21 Rca Corp Method for making an intermetallic contact to a semiconductor device
DE2207012C2 (de) * 1972-02-15 1985-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Kontaktierung von Halbleiterbauelementen
US3769688A (en) * 1972-04-21 1973-11-06 Rca Corp Method of making an electrically-insulating seal between a metal body and a semiconductor device
US3925572A (en) * 1972-10-12 1975-12-09 Ncr Co Multilevel conductor structure and method
US4106051A (en) * 1972-11-08 1978-08-08 Ferranti Limited Semiconductor devices
US3900344A (en) * 1973-03-23 1975-08-19 Ibm Novel integratable schottky barrier structure and method for the fabrication thereof
US4096510A (en) * 1974-08-19 1978-06-20 Matsushita Electric Industrial Co., Ltd. Thermal printing head
US4024569A (en) * 1975-01-08 1977-05-17 Rca Corporation Semiconductor ohmic contact
JPS5268376A (en) * 1975-12-05 1977-06-07 Nec Corp Semiconductor device
DE2555187A1 (de) * 1975-12-08 1977-06-16 Siemens Ag Verfahren zum herstellen einer halbleitervorrichtung
US4600933A (en) * 1976-12-14 1986-07-15 Standard Microsystems Corporation Semiconductor integrated circuit structure with selectively modified insulation layer
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
US4297393A (en) * 1980-02-28 1981-10-27 Rca Corporation Method of applying thin metal deposits to a substrate
JPS58500680A (ja) * 1981-05-04 1983-04-28 モトロ−ラ・インコ−ポレ−テツド 低抵抗合成金属導体を具えた半導体デバイスおよびその製造方法
US4407860A (en) * 1981-06-30 1983-10-04 International Business Machines Corporation Process for producing an improved quality electrolessly deposited nickel layer
US4648175A (en) * 1985-06-12 1987-03-10 Ncr Corporation Use of selectively deposited tungsten for contact formation and shunting metallization
ATE67897T1 (de) * 1985-10-22 1991-10-15 Siemens Ag Integrierte halbleiterschaltung mit einem elektrisch leitenden flaechenelement.
US4910049A (en) * 1986-12-15 1990-03-20 International Business Machines Corporation Conditioning a dielectric substrate for plating thereon
DE68928253T2 (de) * 1988-06-23 1998-01-15 Toshiba Kawasaki Kk Verfahren zur Herstellung von metallischen Verbindungen auf Halbleiterbauelemente
CN1839355B (zh) * 2003-08-19 2012-07-11 安万托特性材料股份有限公司 用于微电子设备的剥离和清洁组合物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL204361A (enExample) * 1955-04-22 1900-01-01
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
NL303035A (enExample) * 1963-02-06 1900-01-01
GB1030540A (en) * 1964-01-02 1966-05-25 Gen Electric Improvements in and relating to semi-conductor diodes
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
FR1535286A (fr) * 1966-09-26 1968-08-02 Gen Micro Electronics Transistor semi-conducteur à oxyde métallique à effet de champ et son procédé de fabrication
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3460007A (en) * 1967-07-03 1969-08-05 Rca Corp Semiconductor junction device

Also Published As

Publication number Publication date
DE2033532A1 (de) 1971-01-28
BE752608A (fr) 1970-12-01
US3632436A (en) 1972-01-04
FR2051687A1 (enExample) 1971-04-09
DE2033532B2 (de) 1978-07-06
FR2051687B1 (enExample) 1976-03-19
JPS5417631B1 (enExample) 1979-07-02
DE2033532C3 (de) 1979-03-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee