GB1315411A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1315411A GB1315411A GB2667770A GB2667770A GB1315411A GB 1315411 A GB1315411 A GB 1315411A GB 2667770 A GB2667770 A GB 2667770A GB 2667770 A GB2667770 A GB 2667770A GB 1315411 A GB1315411 A GB 1315411A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- doped
- region
- junction
- june
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000006798 recombination Effects 0.000 abstract 2
- 238000005215 recombination Methods 0.000 abstract 2
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
1315411 Semi-conductor devices MITSUBISHI DENKI KK 2 June 1970 [2 June 1969] 26677/70 Heading H1K Parts 32 of one of the regions defining the cathode emitter junction 24 of a thyristor 10 are heavily doped so as to provide tunnel junctions 34 which effectively shunt portions of the junction 24. In a bidirectional device such a structure is provided at both ends thereof. In the Si device described P-type regions 14, 16 are formed by gaseous diffusion of Ga into an N-type body 12, and highly B-doped P + type regions 32 are diffused into the region 16. A uniformly P-doped epitaxial layer 18 is then deposited over the regions 32 and a central portion thereof is removed to expose the region 16 and to permit the application of a control electrode 30 thereto. Alternatively the layer 18 may be formed so as to have a dopant concentration decreasing from the surface towards the junction 24, the region 16 emerging centrally flush with the surface as shown. In a modification the junctions 34 are not tunnel junctions but both sides thereof are doped to a sufficient level (at least 5 Î 10<SP>8</SP> atoms/cm.<SP>3</SP>) to produce recombination centres in the depletion regions associated therewith so that at leakage current levels recombination current is significant while at higher current levels diffusion current predominates.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4306669A JPS4921988B1 (en) | 1969-06-02 | 1969-06-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1315411A true GB1315411A (en) | 1973-05-02 |
Family
ID=12653465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2667770A Expired GB1315411A (en) | 1969-06-02 | 1970-06-02 | Semiconductor devices |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4921988B1 (en) |
| DE (1) | DE2027002A1 (en) |
| FR (1) | FR2045797B1 (en) |
| GB (1) | GB1315411A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3225990C2 (en) * | 1982-07-12 | 1985-09-19 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1324170A (en) * | 1961-06-05 | 1963-04-12 | Gen Electric | Improvements in semiconductor devices and their fabrication |
| FR1324783A (en) * | 1961-06-05 | 1963-04-19 | Gen Electric | Improvements to semiconductor devices and their manufacturing processes |
-
1969
- 1969-06-02 JP JP4306669A patent/JPS4921988B1/ja active Pending
-
1970
- 1970-06-01 FR FR7020049A patent/FR2045797B1/fr not_active Expired
- 1970-06-02 GB GB2667770A patent/GB1315411A/en not_active Expired
- 1970-06-02 DE DE19702027002 patent/DE2027002A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2027002A1 (en) | 1970-12-23 |
| JPS4921988B1 (en) | 1974-06-05 |
| FR2045797B1 (en) | 1973-08-10 |
| FR2045797A1 (en) | 1971-03-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |