GB1314149A - Epitaxial deposition - Google Patents
Epitaxial depositionInfo
- Publication number
- GB1314149A GB1314149A GB1314149DA GB1314149A GB 1314149 A GB1314149 A GB 1314149A GB 1314149D A GB1314149D A GB 1314149DA GB 1314149 A GB1314149 A GB 1314149A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- substrate
- layer
- impurities
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000001627 detrimental effect Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13456671A | 1971-04-16 | 1971-04-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1314149A true GB1314149A (en) | 1973-04-18 |
Family
ID=22463938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1314149D Expired GB1314149A (en) | 1971-04-16 | 1972-03-16 | Epitaxial deposition |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5029788B1 (enExample) |
| CA (1) | CA960943A (enExample) |
| DE (1) | DE2214996A1 (enExample) |
| FR (1) | FR2133598B1 (enExample) |
| GB (1) | GB1314149A (enExample) |
| IT (1) | IT947673B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004064131A3 (de) * | 2003-01-10 | 2004-10-07 | Infineon Technologies Ag | Verfahren zur epitaktischen abscheidung von schichten |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5627935A (en) * | 1979-08-15 | 1981-03-18 | Toshiba Corp | Semiconductor device |
| CN107532258B (zh) | 2015-06-15 | 2019-05-28 | 新日铁住金株式会社 | 高Cr系奥氏体不锈钢 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3483108A (en) * | 1967-05-29 | 1969-12-09 | Gen Electric | Method of chemically etching a non-conductive material using an electrolytically controlled mask |
-
1972
- 1972-02-18 IT IT2071272A patent/IT947673B/it active
- 1972-03-10 JP JP47024077A patent/JPS5029788B1/ja active Pending
- 1972-03-16 GB GB1314149D patent/GB1314149A/en not_active Expired
- 1972-03-28 FR FR7211399A patent/FR2133598B1/fr not_active Expired
- 1972-03-28 DE DE19722214996 patent/DE2214996A1/de active Pending
- 1972-04-12 CA CA139,469A patent/CA960943A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004064131A3 (de) * | 2003-01-10 | 2004-10-07 | Infineon Technologies Ag | Verfahren zur epitaktischen abscheidung von schichten |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5029788B1 (enExample) | 1975-09-26 |
| DE2214996A1 (de) | 1972-10-26 |
| FR2133598A1 (enExample) | 1972-12-01 |
| IT947673B (it) | 1973-05-30 |
| CA960943A (en) | 1975-01-14 |
| FR2133598B1 (enExample) | 1976-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |