CA960943A - Method for minimizing autodoping in epitaxial deposition - Google Patents

Method for minimizing autodoping in epitaxial deposition

Info

Publication number
CA960943A
CA960943A CA139,469A CA139469A CA960943A CA 960943 A CA960943 A CA 960943A CA 139469 A CA139469 A CA 139469A CA 960943 A CA960943 A CA 960943A
Authority
CA
Canada
Prior art keywords
autodoping
minimizing
epitaxial deposition
epitaxial
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA139,469A
Other languages
English (en)
Other versions
CA139469S (en
Inventor
Andrea Spiro
David W. Boss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA960943A publication Critical patent/CA960943A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CA139,469A 1971-04-16 1972-04-12 Method for minimizing autodoping in epitaxial deposition Expired CA960943A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13456671A 1971-04-16 1971-04-16

Publications (1)

Publication Number Publication Date
CA960943A true CA960943A (en) 1975-01-14

Family

ID=22463938

Family Applications (1)

Application Number Title Priority Date Filing Date
CA139,469A Expired CA960943A (en) 1971-04-16 1972-04-12 Method for minimizing autodoping in epitaxial deposition

Country Status (6)

Country Link
JP (1) JPS5029788B1 (enExample)
CA (1) CA960943A (enExample)
DE (1) DE2214996A1 (enExample)
FR (1) FR2133598B1 (enExample)
GB (1) GB1314149A (enExample)
IT (1) IT947673B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627935A (en) * 1979-08-15 1981-03-18 Toshiba Corp Semiconductor device
WO2004064131A2 (de) * 2003-01-10 2004-07-29 Infineon Technologies Ag Verfahren zur epitaktischen abscheidung von schichten
CN107532258B (zh) 2015-06-15 2019-05-28 新日铁住金株式会社 高Cr系奥氏体不锈钢

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3483108A (en) * 1967-05-29 1969-12-09 Gen Electric Method of chemically etching a non-conductive material using an electrolytically controlled mask

Also Published As

Publication number Publication date
GB1314149A (en) 1973-04-18
JPS5029788B1 (enExample) 1975-09-26
DE2214996A1 (de) 1972-10-26
FR2133598A1 (enExample) 1972-12-01
IT947673B (it) 1973-05-30
FR2133598B1 (enExample) 1976-06-11

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