GB1295650A - - Google Patents

Info

Publication number
GB1295650A
GB1295650A GB1295650DA GB1295650A GB 1295650 A GB1295650 A GB 1295650A GB 1295650D A GB1295650D A GB 1295650DA GB 1295650 A GB1295650 A GB 1295650A
Authority
GB
United Kingdom
Prior art keywords
substrate
strips
type
diaphragm
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1295650A publication Critical patent/GB1295650A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R21/00—Variable-resistance transducers
    • H04R21/02—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/16—Mounting or tensioning of diaphragms or cones
    • H04R7/18—Mounting or tensioning of diaphragms or cones at the periphery
    • H04R7/22—Clamping rim of diaphragm or cone against seating

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Recrystallisation Techniques (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

1295650 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 26 Nov 1969 [29 Nov 1968] 57792/69 Heading H1K A semi-conductor device including a relatively thick portion 3 and a thinner portion 2 is formed by providing on a flat semi-conductor substrate 20 a layer 21 having different conductivity and/ or conductivity type from the substrate 20, locally removing part of the substrate 21 to a depth approaching, but not reaching, its interface with the layer 21, and finally electrolytically etching down to the interface within the recess formed by the local removal. The local removal may itself be effected by electrolytic etching using an electrode in an insulating capillary, by drilling or grinding, or, in the preferred method, by spark erosion using an electrode which is moved steadily towards the substrate as erosion progresses. The electrolytic etch may, for a Si substrate, use an HF solution with Pt electrodes in the solution and on the substrate. In the embodiment shown the thin portion 2 of the device constitutes a flexible diaphragm for use, for example, in measuring fluid pressure. The portion 2 is part of a relatively high resistivity P-doped N-type layer 21 epitaxially deposited on the low resistivity Sbdoped N-type substrate 20, and contains four B-diffused P-type resistance strips such as 22, 23 constituting a Wheatstone Bridge strain gauge arrangement interconnected by Al strips 42, 46 &c. When the diaphragm 2 lies in the (111) plane the strain-dependence of resistance of the P-type strips is independent of strip orientation, and the strips are situated in two pairs, one near the centre of the diaphragm 2 and one near the periphery where it joins the thick annular pin 3. If the diaphragm 2 is situated in the (110) plane two of the P-type strips lie along the [110] direction while the other two lie along the [001] direction, along which axis resistance is relatively independent of strain for P-type material. For use in an accelerometer, a microphone, a displacement detector or a device for measuring surface radius of curvature, a thick central hub may additionally be provided, and the diaphragm may be continuous or may be divided into three radiating spoke-like strips joining the hub and rim, each strip containing a Wheatstone Bridge strain gauge arrangement.
GB1295650D 1968-11-29 1969-11-26 Expired GB1295650A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6817089A NL162254B (en) 1968-11-29 1968-11-29 SEMI-CONDUCTOR DEVICE FOR CONVERSION OF MECHANICAL VOLTAGES INTO ELECTRICAL SIGNALS AND METHOD OF MANUFACTURING THIS.

Publications (1)

Publication Number Publication Date
GB1295650A true GB1295650A (en) 1972-11-08

Family

ID=19805282

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1295650D Expired GB1295650A (en) 1968-11-29 1969-11-26

Country Status (10)

Country Link
AT (1) AT316894B (en)
BE (1) BE742331A (en)
BR (1) BR6914557D0 (en)
CH (1) CH518006A (en)
DE (1) DE1959527C3 (en)
ES (2) ES373779A1 (en)
FR (1) FR2024961A1 (en)
GB (1) GB1295650A (en)
NL (1) NL162254B (en)
SE (2) SE384437B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2438264A1 (en) * 1978-10-06 1980-04-30 Hitachi Ltd SEMICONDUCTOR PRESSURE TRANSDUCER ASSEMBLY
USRE31459E (en) 1976-02-09 1983-12-06 Harry E. Aine Solid state force transducer and method of making same
DE4201634A1 (en) * 1991-01-24 1992-08-06 Mitsubishi Electric Corp SEMICONDUCTOR PRESSURE RECORDING DEVICE

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4191057A (en) * 1978-06-28 1980-03-04 Gould Inc. Inversion layer sprain gauge
DE2841312C2 (en) * 1978-09-22 1985-06-05 Robert Bosch Gmbh, 7000 Stuttgart Monolithic semiconductor pressure sensor and process for its manufacture
IT1212404B (en) * 1979-02-22 1989-11-22 Rca Corp METHOD OF A SINGLE ATTACK FOR THE FORMATION OF A MESA PRESENTING A MULTIPLE WALL.
DE3874884T2 (en) * 1988-04-21 1993-04-29 Marelli Autronica ELECTRICAL FORCE AND / OR DEFLECTION SENSOR, ESPECIALLY FOR USE AS A PRESSURE SENSOR.
US4904978A (en) * 1988-04-29 1990-02-27 Solartron Electronics, Inc. Mechanical sensor for high temperature environments
WO2006023753A2 (en) * 2004-08-20 2006-03-02 Semitool, Inc. System for thinning a semiconductor workpiece
CN113555346B (en) * 2020-08-21 2023-05-23 友达光电股份有限公司 Circuit board and method for measuring strain amount of circuit board

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3270554A (en) * 1961-01-04 1966-09-06 Bell Telephone Labor Inc Diffused layer transducers
US3277698A (en) * 1963-11-15 1966-10-11 Bell Telephone Labor Inc Stress sensing semiconductive devices
NL153947B (en) * 1967-02-25 1977-07-15 Philips Nv PROCEDURE FOR MANUFACTURING SEMICONDUCTOR DEVICES, USING A SELECTIVE ELECTROLYTIC ETCHING PROCESS AND OBTAINING SEMI-CONDUCTOR DEVICE BY APPLICATION OF THE PROCESS.
BE711537A (en) * 1968-03-01 1968-09-02

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE31459E (en) 1976-02-09 1983-12-06 Harry E. Aine Solid state force transducer and method of making same
FR2438264A1 (en) * 1978-10-06 1980-04-30 Hitachi Ltd SEMICONDUCTOR PRESSURE TRANSDUCER ASSEMBLY
DE4201634A1 (en) * 1991-01-24 1992-08-06 Mitsubishi Electric Corp SEMICONDUCTOR PRESSURE RECORDING DEVICE

Also Published As

Publication number Publication date
ES400839A1 (en) 1975-02-01
NL6817089A (en) 1970-06-02
AT316894B (en) 1974-07-25
SE384437B (en) 1976-05-03
BE742331A (en) 1970-05-27
CH518006A (en) 1972-01-15
DE1959527B2 (en) 1981-03-19
DE1959527A1 (en) 1970-06-11
NL162254B (en) 1979-11-15
BR6914557D0 (en) 1973-01-02
FR2024961A1 (en) 1970-09-04
DE1959527C3 (en) 1981-12-10
SE363700B (en) 1974-01-28
ES373779A1 (en) 1972-05-16

Similar Documents

Publication Publication Date Title
GB1295650A (en)
US4783237A (en) Solid state transducer and method of making same
CN104062045B (en) A kind of piezoresistive pressure sensor and its manufacture method
GB1157989A (en) Improvements in and relating to Cleaning Selected Surface Areas of Substrates
CN104062463B (en) Piezoresistive acceleration sensor and manufacturing method thereof
CN104062059B (en) A kind of MEMS piezoresistive pressure sensor and its manufacture method
GB1225061A (en) Manufacturing semiconductor devices
US4732647A (en) Batch method of making miniature capacitive force transducers assembled in wafer form
GB1415445A (en) Method of measuring strain and a high sensitivity semiconductor strain transducer assembly
JPH0527970B2 (en)
US3537319A (en) Silicon diaphragm with optimized integral strain gages
JP2615887B2 (en) Semiconductor pressure sensor
GB1459911A (en) Method and apparatus for fabricating transducers
CN108955995A (en) The Sea-water pressure sensor and preparation method of quick response based on diamond thin
CN101068032B (en) Semiconductor strain gauge and the manufacturing method
GB2029094A (en) Pressure transducers having piezoresistive strain gauges and methods of manufacturing such transducers
JPS5577178A (en) Semiconductor pressure converting element
CN208537079U (en) The Sea-water pressure sensor of quick response based on diamond thin
GB923153A (en) Semiconductor strain gauge
EP3588072A1 (en) Method for manufacturing a working electrode of an electrochemical sensor and product thereof
JPH049770A (en) Semiconductor strain-sensitive sensor and manufacture thereof
JPS5739571A (en) Constant current diode
JPH0528898B2 (en)
JPH10284737A (en) Manufacture of capacitive semiconductor sensor
JPH0340959B2 (en)

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee
PCNP Patent ceased through non-payment of renewal fee