CN208537079U - The Sea-water pressure sensor of quick response based on diamond thin - Google Patents
The Sea-water pressure sensor of quick response based on diamond thin Download PDFInfo
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- CN208537079U CN208537079U CN201821229095.4U CN201821229095U CN208537079U CN 208537079 U CN208537079 U CN 208537079U CN 201821229095 U CN201821229095 U CN 201821229095U CN 208537079 U CN208537079 U CN 208537079U
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Abstract
The utility model belongs to marine environmental monitoring equipment technical field, is related to a kind of for detecting the sensor of seawater pressure.A kind of Sea-water pressure sensor of the quick response based on diamond thin, including pedestal, substrate, insulating layer, pressure sensitive layer, electrode and protective layer；The substrate is located at the top surface of pedestal, inside be formed with stress chamber；Insulating layer is located at the top surface of substrate, and is located at the surface of stress chamber；Pressure sensitive layer is located at the top surface of insulating layer, is size, structure, the identical four pieces of films of ingredient that monocrystalline or polycrystalline boron-doped diamond material or boron-doped diamond and silicon carbide or boron-doped diamond and graphite material are constituted；The electrode includes four, is separately positioned on the four pieces of films to form pressure sensitive layer；The protective layer is deposited on the top surface of insulating layer, and by pressure sensitive layer and electrode package in it.The Sea-water pressure sensor of the utility model can improve sensitivity and stability that sensor responds seawater pressure to avoid sensor structure unstability and signal drift.
Description
Technical field
The utility model belongs to marine environmental monitoring equipment technical field, is related to a kind of for detecting the sensing of seawater pressure
Device.
Background technique
Sea water advanced is the Important Parameters of hydrospace detection and development and utilization field, and the accurate seawater pressure that obtains is believed with depth
Breath is important prerequisite and the basis for disclosing ocean dynamics parameter development law.Sea-water pressure sensor can pass through measurement sea
Water pressure obtains the depth information in sea area to be measured.It is flat thermohaline deep investigation instrument, subsurface buoy and underwater movement have been widely used at present
In the oceanographic observations system such as platform.
Piezoresistive pressure sensor has as a kind of widely used pressure sensor and responds fast, small in size, precision
The advantages that high, high sensitivity and movement-less part, but defect and manufacturing process side due to diffusion silicon semiconductor material performance
The reason of face, there is structural instability and time drift in the type pressure sensor, so that measurement result is by environment temperature
It influences big.For the drifting problem for solving such pressure sensor, currently used method is calculated using hardware circuit, software compensation
The modes such as method carry out temperature-compensating and pressure compensation, to improve the overall performance of pressure sensor.However, since diffusion silicon is in height
Screw-down structure unstability, these solutions be merely able within the regular hour effectively, for need long continuous operation with
And working environment is for the underwater Sea-water pressure sensor in deep-sea, it will causes testing result serious drift occur, then
Cumulative data error is generated, the accuracy of sea water advanced detection is seriously affected.
Utility model content
In order to solve the problems, such as structural instability existing for existing pressure sensor and signal drift, sensor is improved to seawater
The sensitivity and stability of pressure response, the utility model provide a kind of Sea-water pressure sensor.
The utility model solve its technical problem the technical solution adopted is that: a kind of quick response based on diamond thin
Sea-water pressure sensor, including pedestal, substrate, insulating layer, pressure sensitive layer, electrode and protective layer；Wherein, the substrate position
In the top surface of the pedestal, inside be formed with stress chamber；The insulating layer is located at the top surface of the substrate, and is located at described answer
The surface of power chamber；The pressure sensitive layer is located at the top surface of the insulating layer, and pressure sensitive layer is located at the insulating layer
Top surface is that monocrystalline or polycrystalline boron-doped diamond or boron-doped diamond and silicon carbide or boron-doped diamond and graphite are constituted
Size, structure, the identical four pieces of films of ingredient；The electrode includes four, is separately positioned on that form the pressure quick
On four pieces of films for feeling layer；The protective layer is deposited on the top surface of the insulating layer, and the pressure sensitive layer and electrode are sealed
In it.
Preferably, the pedestal is designed to cylinder, and top surface is equipped with cricoid protrusion, by the protrusion with it is described
Substrate assembly is fixed；Cable tray is offered in the pedestal, the lead for connecting four electrodes is worn by the cable tray
Pedestal out.
Preferably, the substrate is the cylinder made of High Resistivity Si or sapphire or diamond-like or intrinsic diamond material
Body, the stress chamber formed in substrate are vacuum cavity.
Preferably, the insulating layer is designed to circular membrane layer, and thickness is between 0.02~0.5mm, by intrinsic diamond
Or sapphire is made, and four pieces of films for forming pressure sensitive layer are circumferentially equidistantly arranged in the top surface of the insulating layer.
Preferably, in the pressure sensitive layer, the doping concentration of boron is per cubic centimeter 5.0 × 1017~6.0 × 1019
A boron atom.
Preferably, the thickness of four pieces of films is between 5~20 microns, and area is at 100~2500 μm2Between, four pieces
Film forms the identical film resistor of four piezoresistance factors, and the piezoresistance factor of the film resistor is preferably between 120~3000.
Preferably, the electrode is combination electrode, is made of titanium and gold or is made of titanium and chromium, and the titanium and gold
Thickness than or titanium and chromium thickness ratio between 1:2~1:10.
Preferably, the protective layer is using diamond-like or the composite material shape of silicon carbide or diamond-like and silicon carbide
At film layer, with a thickness of 3~50 μm.
Compared with prior art, the Sea-water pressure sensor knot of the quick response based on diamond thin of the utility model
Structure is simple, small in size, easy to use, and the boron for using high elastic modulus, high piezoresistance factor, high stable is proposed from sensing material angle
Doped diamond material prepares core sensing element --- the pressure sensitive layer of pressure sensor, so as to effectively avoid pressure
The structural instability and signal drift problem of sensor cooperate the stress chamber opened up in substrate, can significantly improve sensor to sea
The sensitivity and stability of hydraulic pressure force-responsive facilitate the accuracy for promoting sea water advanced detection, are especially suitable for applying various
In oceanographic observation system, the accurate detection to ocean depth is realized.
Detailed description of the invention
Fig. 1 is a kind of profilograph of embodiment of Sea-water pressure sensor of the utility model；
Fig. 2 is a kind of perspective view of embodiment of the Sea-water pressure sensor of the utility model；
Fig. 3 is the structural perspective of another embodiment of the Sea-water pressure sensor of the utility model.
Specific embodiment
The Sea-water pressure sensor of the utility model is described in detail with reference to the accompanying drawings and examples.
As depicted in figs. 1 and 2, the Sea-water pressure sensor of the present embodiment mainly includes pedestal 5, substrate 3, insulating layer 6, pressure
The component parts such as power sensitive layer 1, combination electrode 2, protective layer 4.Wherein, load bearing component of the pedestal 5 as entire sensor, preferably
The material that, chance seawater strong using bearing capacity does not corrode is made.Cable tray 53 is offered in pedestal 5, for connecting combination electrode 2
The lead voltage signal that passes through, and then combination electrode 2 is generated draw sensor, to be sent to the signal acquisition electricity of rear end
Road.A kind of preferred structure as the present embodiment designs, and the pedestal 5 is preferably designed to cylindrical structure, can be from pedestal 5
Bottom surface 52 etches cable tray 53 to its top surface 51, forms the through-hole structure of the top surface 51 and bottom surface 52 through pedestal 5.Cabling is logical
The longitudal section shape in road 53 can be designed to T-type, as shown in Figure 1, the small one end of diameter is provided with the top surface 51 of pedestal 5, diameter
Big one end is provided with the bottom surface 52 of pedestal 5, inside can with arranging signal collecting circuit board, realize signal acquisition circuit plate with
The integration of sensor.Certainly, the signal acquisition circuit plate can also be placed outside sensor, and the present embodiment is to this without specific
Limitation.
It is fixed for the ease of the assembly between pedestal 5 and substrate 3, it is convex to form ring shape fastening in the top surface of pedestal 5 51
54 are played, is combined using fastening protrusion 54 with the bottom of substrate 3, pedestal 5 and the fastness that substrate 3 is assembled can be improved, such as
Shown in Fig. 2.
In the present embodiment, substrate 3 can be made of materials such as sapphire, diamond-like or intrinsic diamonds, excellent
Choosing is designed to cylinder, and diameter is less than the diameter of pedestal 5, is installed on the top surface 51 of pedestal 5, and coaxial with pedestal 5.In substrate
Etch cavity in 3 forms stress chamber 31.Stress chamber 31 is etched from the bottom surface of substrate 3 to top surface direction, but does not penetrate substrate 3
Top surface.The bottom surface for blocking substrate 3 makes stress chamber 31 become closed cavity, and carries out vacuumize process to stress chamber 31, is formed
Vacuum state.In the present embodiment, the diameter of preferred design stress chamber 31 towards the accent of 3 top surface of substrate is greater than towards substrate 3
The accent diameter of bottom surface, such as can be using the longitudal section shape of design stress chamber 31 as T-type perhaps inverted truncated cone-shaped or design
At mouth upward tubaeform, as illustrated in fig. 1 and 2.
Insulating layer 6 is the carrying pressure sensitive layer 1 and insulating materials with 3 carrying out firm packaging of substrate, positioned at the top surface of substrate 3,
It is made of materials such as sapphire or intrinsic diamonds, thickness forms film-form in the range of 0.02~0.5mm.At this
In embodiment, insulating layer 6 is located at the surface of stress chamber 31, is designed to circle, and diameter is slightly larger than the diameter of stress chamber 31, with
Stress chamber 31 is coaxial, to improve sensitivity of the pressure sensor to pressure response.
In the top surface deposition pressure sensitive layer 1 of insulating layer 6, pressure sensitive layer 1 is boron-doped diamond, can be monocrystalline or
Polycrystalline boron-doped diamond formed size, structure, the identical four pieces of films of ingredient, be also possible to boron-doped diamond with
Size, the structure, the identical four blocks of laminated films of ingredient that silicon carbide or boron-doped diamond and graphite are constituted are this four pieces thin
Film or laminated film form four identical film resistors of piezoresistance factor.In the present embodiment, boron in each film resistor
Doping concentration range be 5.0 × 1017~6.0 × 1019B/cm2, that is, in film resistor per cubic centimeter comprising 5.0 ×
101~6.0 × 1019A boron atom.The thickness of each film resistor is between 5~20 microns, and each film resistor is for laying
The area of the upper surface of electrode 2 is at 100~2500 μm2Between, (piezoresistance factor is indicated in list the piezoresistance factor of four film resistors
Position strains the relative changes of lower resistance, is the measurement of the piezoresistive effect of material) between 120~3000.
Four film resistors are circumferentially equidistantly arranged in the top surface of insulating layer 6, it is preferably smaller at the diameter of circumference
In or be equivalent to accent diameter of the stress chamber 31 towards 3 top surface of substrate, and make stress chamber 31 central axis pass through the circle
The center of circle in week.
One electrode 2 is installed respectively in the upper surface of each film resistor, electrode 2 preferably using titanium combination electrode or
Titanium chromium combination electrode, and the thickness of titanium Ti and gold Au is preferably defined than range in 1:2- than the thickness of range or titanium Ti and chromium Cr
Between 1:10.The thickness of titanium Ti is preferably 50~100nm, and the thickness of golden Au or chromium Cr are preferably 200~500nm, using electronics
Beam evaporation coating technique realizes the combination of two kinds of materials, forms required combination electrode 2.On each combination electrode 2 respectively
A lead is connected, lead is passed through into insulating layer 6 and substrate 3(or is drawn from the side of insulating layer 6 and substrate 3), and then wear
Enter the cable tray 53 in pedestal 5, and draw pedestal 5 from cable tray 53, to be used for transmission the voltage generated between electrode 2 letter
Number.
Protective materials, such as diamond-like or silicon carbide or diamond-like and carbonization are deposited in the top surface of insulating layer 6
The composite material of silicon realizes the encapsulation to four combination electrodes 2 and pressure sensitive layer 1 to form protective layer 4.Protective layer 4 exists
While combination electrode 2 and pressure sensitive layer 1 and seawater are completely cut off, it is easy to conduct seawater pressure to pressure sensitive layer 1 and absolutely
Edge layer 6 makes pressure sensitive layer 1 and insulating layer 6 generate stress deformation.Pressure sensitive layer 1 by combination electrode 2 connection constitute favour this
Electric bridge is stepped on, corresponding voltage signal is generated according to the variation of extraneous seawater pressure, to characterize pressure size, and then by drawing
Line is sent to the signal acquisition circuit of rear end.
In the present embodiment, 4 preferred deposition of protective layer is at circle, and diameter is preferably equal with the diameter of insulating layer 6, with reality
Now to the protective effect of pressure sensitive layer and electrode.
In addition, in order to enable the Sea-water pressure sensor of the present embodiment easily with underwater monitoring equipment fixing assembling and
The transmission of electric signal is carried out, the present embodiment preferably installs weather proof receptacle 10 in the bottom surface of the pedestal of Sea-water pressure sensor 5 52, such as
Shown in Fig. 3.The pedestal 5 of Sea-water pressure sensor is closely connect with the weather proof receptacle 10 of injection molding, utilizes weather proof receptacle 10
It is used cooperatively with the socket of underwater monitoring equipment, can both realize assembly positioning of the Sea-water pressure sensor under water in monitoring device
With waterproofing design, and power supply needed for pressure sensor work being transmitted by the metal contact element 12 that has on weather proof receptacle 10
And the voltage signal for reflecting seawater pressure size that pressure sensor generates, it installs simple and quick.On weather proof receptacle 10
Metal contact element 12 includes four, is connected one to one respectively with four leads for connecting four combination electrodes 2；Weather proof receptacle 10
Configurable traveling nut outside improves the leakproofness that Sea-water pressure sensor connects under water.It is designed as a kind of preferred structure, it can be with
The weather proof receptacle 10 is designed to two-stage step structure, the sealing of cable tray 53 of higher level's step and pedestal 5 is assembled, junior's platform
Rank installs four metal contact elements 12, and the periphery 11 of every level-one step is designed using inclination angle, to improve weather proof receptacle 10 and insert
The leakproofness of seat connection.
The Sea-water pressure sensor structure of the present embodiment is simple, small in size, response is sensitive, structural stability is high, drift is low,
It can be widely used in the various oceanographic observation systems such as thermohaline deep investigation instrument, subsurface buoy and underwater movable platform, realize sea water advanced
Accurate measurement, and assembly manipulation is simple and fast.
Certainly, the above is only a kind of preferred embodiment of the utility model, it is noted that for the art
Those of ordinary skill for, without departing from the principle of this utility model, several improvements and modifications can also be made, this
A little improvements and modifications also should be regarded as the protection scope of the utility model.
Claims (10)
1. a kind of Sea-water pressure sensor of the quick response based on diamond thin characterized by comprising
Pedestal；Substrate, be located at the pedestal top surface, inside be formed with stress chamber；
Insulating layer is located at the top surface of the substrate, and is located at the surface of the stress chamber；
Pressure sensitive layer is located at the top surface of the insulating layer, is monocrystalline or polycrystalline boron-doped diamond material or boron doping gold
Size, the structure, the identical four pieces of films of ingredient that hard rock and silicon carbide or boron-doped diamond and graphite material are constituted；
Electrode comprising four, be separately positioned on the four pieces of films to form pressure sensitive layer；
Protective layer is deposited on the top surface of the insulating layer, and by the pressure sensitive layer and electrode package in it.
2. Sea-water pressure sensor according to claim 1, which is characterized in that cable tray is offered in the pedestal,
The lead for connecting four electrodes draws pedestal by the cable tray.
3. Sea-water pressure sensor according to claim 2, which is characterized in that the pedestal is cylinder, and top is set
There is cricoid protrusion, is fixed by the protrusion and substrate assembly.
4. Sea-water pressure sensor according to claim 1, which is characterized in that the substrate is cylindrical body, shape in substrate
At stress chamber be vacuum cavity.
5. Sea-water pressure sensor according to claim 1, which is characterized in that the insulating layer be by intrinsic diamond or
Circular membrane layer made of sapphire material, with a thickness of 0.02~0.5mm；Four pieces of films of the pressure sensitive layer are formed in institute
It circumferentially equidistantly arranges the top surface for stating insulating layer.
6. Sea-water pressure sensor according to claim 1, which is characterized in that the protective layer be by diamond-like or
The film layer that the composite material of silicon carbide or diamond-like and silicon carbide is constituted, with a thickness of 3~50 μm.
7. Sea-water pressure sensor according to claim 1 to 6, which is characterized in that the thickness of four pieces of films
Degree is between 5~20 μm, and area is at 100~2500 μm2Between；Four pieces of films form the identical thin-film electro of four piezoresistance factors
Resistance, the piezoresistance factor of the film resistor is between 120~3000.
8. Sea-water pressure sensor according to claim 1 to 6, which is characterized in that the electrode be by titanium and
Gold be made the thickness of the perhaps combination electrode made of titanium and chromium and the titanium and gold than or titanium and chromium thickness ratio 1:
Between 2~1:10.
9. Sea-water pressure sensor according to claim 1 to 6, which is characterized in that the bottom surface of pedestal is equipped with water
Close plug.
10. Sea-water pressure sensor according to claim 9, which is characterized in that the weather proof receptacle is two-stage step formula
Structure, the periphery of every level-one step form inclination angle, and the cable tray sealing of higher level's step and the pedestal is assembled, on junior's step
There are four metal contact element, the leads of four metal contact elements and four electrodes to connect one to one for installation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821229095.4U CN208537079U (en) | 2018-08-01 | 2018-08-01 | The Sea-water pressure sensor of quick response based on diamond thin |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821229095.4U CN208537079U (en) | 2018-08-01 | 2018-08-01 | The Sea-water pressure sensor of quick response based on diamond thin |
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| CN208537079U true CN208537079U (en) | 2019-02-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108955995A (en) * | 2018-08-01 | 2018-12-07 | 山东省科学院海洋仪器仪表研究所 | The Sea-water pressure sensor and preparation method of quick response based on diamond thin |
-
2018
- 2018-08-01 CN CN201821229095.4U patent/CN208537079U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108955995A (en) * | 2018-08-01 | 2018-12-07 | 山东省科学院海洋仪器仪表研究所 | The Sea-water pressure sensor and preparation method of quick response based on diamond thin |
| CN108955995B (en) * | 2018-08-01 | 2024-02-02 | 山东省科学院海洋仪器仪表研究所 | Sea water pressure sensor based on rapid response of diamond film and preparation method thereof |
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Effective date of registration: 20210908 Address after: 266000 room H17, 5th floor, No. 880 Tong'an Road, Laoshan District, Qingdao, Shandong Patentee after: Qingdao Puze Marine Technology Co.,Ltd. Address before: 266200, Qingdao, Shandong, Qingdao, Qingdao, the core of the blue Silicon Valley, blue Silicon Valley business center, phase one, building No. 1. Patentee before: INSTITUTE OF OCEANOGRAPHIC INSTRUMENTATION, SHANDONG ACADEMY OF SCIENCES |