GB1291070A - Pyrolytic deposition of silicon nitride films - Google Patents

Pyrolytic deposition of silicon nitride films

Info

Publication number
GB1291070A
GB1291070A GB59060/69A GB5906069A GB1291070A GB 1291070 A GB1291070 A GB 1291070A GB 59060/69 A GB59060/69 A GB 59060/69A GB 5906069 A GB5906069 A GB 5906069A GB 1291070 A GB1291070 A GB 1291070A
Authority
GB
United Kingdom
Prior art keywords
substrate
silicon nitride
silicon
ammonia
adduct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB59060/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1291070A publication Critical patent/GB1291070A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/025—Other inorganic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
GB59060/69A 1969-02-10 1969-12-03 Pyrolytic deposition of silicon nitride films Expired GB1291070A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79805669A 1969-02-10 1969-02-10

Publications (1)

Publication Number Publication Date
GB1291070A true GB1291070A (en) 1972-09-27

Family

ID=25172425

Family Applications (1)

Application Number Title Priority Date Filing Date
GB59060/69A Expired GB1291070A (en) 1969-02-10 1969-12-03 Pyrolytic deposition of silicon nitride films

Country Status (3)

Country Link
US (1) US3637423A (cg-RX-API-DMAC10.html)
FR (1) FR2035224A5 (cg-RX-API-DMAC10.html)
GB (1) GB1291070A (cg-RX-API-DMAC10.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2130353A1 (en) * 1971-03-19 1972-11-03 Itt Gas-etching for silicon nitride deposits - by glow discharge technique
NL7209294A (cg-RX-API-DMAC10.html) * 1972-07-01 1974-01-03
US4036653A (en) * 1975-05-28 1977-07-19 E. I. Du Pont De Nemours And Company Amorphous silicon nitride composition containing carbon, and vapor phase process
US4279947A (en) * 1975-11-25 1981-07-21 Motorola, Inc. Deposition of silicon nitride
DE2557079C2 (de) * 1975-12-18 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Herstellen einer Maskierungsschicht
US4142004A (en) * 1976-01-22 1979-02-27 Bell Telephone Laboratories, Incorporated Method of coating semiconductor substrates
US4158717A (en) * 1977-02-14 1979-06-19 Varian Associates, Inc. Silicon nitride film and method of deposition
NL7707078A (nl) * 1977-06-27 1978-12-29 Philips Nv Koolstoffilmweerstand.
US4289801A (en) * 1980-05-21 1981-09-15 United Technologies Corporation Method for producing fine grained pyrolytic silicon nitride
US5540996A (en) * 1983-08-23 1996-07-30 The United States Of America As Represented By The Secretary Of The Air Force Rigidized, low density, insulation
JPS61117841A (ja) * 1984-11-14 1986-06-05 Hitachi Ltd シリコン窒化膜の形成方法
US6566281B1 (en) * 1997-10-15 2003-05-20 International Business Machines Corporation Nitrogen-rich barrier layer and structures formed
US10087521B2 (en) * 2015-12-15 2018-10-02 Silcotek Corp. Silicon-nitride-containing thermal chemical vapor deposition coating

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1251287C2 (de) * 1962-09-10 1975-10-09 United Aircraft Corporation, East Hartford, Conn. (V.St.A.) Verfahren zur herstellung von nichtporoesem siliciumnitrid
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
JPS5128983B1 (cg-RX-API-DMAC10.html) * 1966-10-28 1976-08-23

Also Published As

Publication number Publication date
US3637423A (en) 1972-01-25
FR2035224A5 (cg-RX-API-DMAC10.html) 1970-12-18

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee