GB1222392A - Improvements in and relating to the deposition of silicon nitride films - Google Patents

Improvements in and relating to the deposition of silicon nitride films

Info

Publication number
GB1222392A
GB1222392A GB5330/68A GB533068A GB1222392A GB 1222392 A GB1222392 A GB 1222392A GB 5330/68 A GB5330/68 A GB 5330/68A GB 533068 A GB533068 A GB 533068A GB 1222392 A GB1222392 A GB 1222392A
Authority
GB
United Kingdom
Prior art keywords
silicon nitride
substrate
susceptor
silane
feb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5330/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1222392A publication Critical patent/GB1222392A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Abstract

1,222,392. Silicon nitride. INTERNATIONAL BUSINESS MACHINES CORP. 2 Feb., 1968 [8 Feb., 1967], No. 5330/68. Addition to 1,153,794. Heading C1A. Silicon nitride Si 3 N 4 is deposited on a substrate positioned in a reaction zone by introducing a gaseous mixture of silane and a nitrogen-containing compound, together with a carrier gas, except hydrogen, to retard the reaction rate, to a reaction zone and contacting the substrate at more than 500‹ C. with the gaseous mixture, to cause pyrolitic deposition of a pin-hole free film of Si 3 N 4 on the surface. The N-containing compound may be NH 3 . The substrate may be a semi-conductor or a susceptor, e.g. Si or graphite, and the carrier gas may be molecular N 2 . The volume ratio of silane to ammonia may be at least stoichiometric (i.e. 3: 4) and may be 1: 300 or more. The reaction chamber may be of quartz, and heating may be actuated by coupling a susceptor with a R.F. power source. The silicon nitride may be deposited over discrete areas of the coated surface by masking the remaining surface.
GB5330/68A 1965-10-11 1968-02-02 Improvements in and relating to the deposition of silicon nitride films Expired GB1222392A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49479065A 1965-10-11 1965-10-11
US62933867A 1967-02-08 1967-02-08

Publications (1)

Publication Number Publication Date
GB1222392A true GB1222392A (en) 1971-02-10

Family

ID=27051543

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5330/68A Expired GB1222392A (en) 1965-10-11 1968-02-02 Improvements in and relating to the deposition of silicon nitride films

Country Status (2)

Country Link
FR (1) FR93741E (en)
GB (1) GB1222392A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ305576B6 (en) * 2014-09-25 2015-12-16 Univerzita Karlova v Praze Matematicko- fyzikální fakulta Fyzikální ústav Process for preparing microporous layers of silicon nitride in quartz ampoules and apparatus for making the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ305576B6 (en) * 2014-09-25 2015-12-16 Univerzita Karlova v Praze Matematicko- fyzikální fakulta Fyzikální ústav Process for preparing microporous layers of silicon nitride in quartz ampoules and apparatus for making the same

Also Published As

Publication number Publication date
FR93741E (en) 1969-05-09

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