GB1288278A - - Google Patents

Info

Publication number
GB1288278A
GB1288278A GB5686169A GB5686169A GB1288278A GB 1288278 A GB1288278 A GB 1288278A GB 5686169 A GB5686169 A GB 5686169A GB 5686169 A GB5686169 A GB 5686169A GB 1288278 A GB1288278 A GB 1288278A
Authority
GB
United Kingdom
Prior art keywords
layer
oxide layer
semi
conductor
isolated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5686169A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1288278A publication Critical patent/GB1288278A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Element Separation (AREA)
GB5686169A 1968-12-31 1969-11-20 Expired GB1288278A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78817768A 1968-12-31 1968-12-31

Publications (1)

Publication Number Publication Date
GB1288278A true GB1288278A (fr) 1972-09-06

Family

ID=25143680

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5686169A Expired GB1288278A (fr) 1968-12-31 1969-11-20

Country Status (4)

Country Link
DE (1) DE1965408C3 (fr)
FR (1) FR2027429B1 (fr)
GB (1) GB1288278A (fr)
NL (1) NL6918388A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
GB1439351A (en) * 1972-06-02 1976-06-16 Texas Instruments Inc Capacitor
US4238275A (en) * 1978-12-29 1980-12-09 International Business Machines Corporation Pyrocatechol-amine-water solution for the determination of defects
JPH0775245B2 (ja) * 1990-11-16 1995-08-09 信越半導体株式会社 誘電体分離基板及びその製造方法
JPH0775244B2 (ja) * 1990-11-16 1995-08-09 信越半導体株式会社 誘電体分離基板及びその製造方法
RU2220449C1 (ru) 2002-12-19 2003-12-27 Акционерное общество закрытого типа "ЛИТЭКС" Способ маркирования изделий с помощью набора меток и метка для маркирования

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
NL144778B (nl) * 1966-12-20 1975-01-15 Western Electric Co Werkwijze voor het vervaardigen van een halfgeleiderinrichting door anisotroop etsen alsmede aldus vervaardigde inrichting.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate

Also Published As

Publication number Publication date
DE1965408C3 (de) 1979-01-25
FR2027429B1 (fr) 1973-08-10
NL6918388A (fr) 1970-07-02
FR2027429A1 (fr) 1970-09-25
DE1965408A1 (de) 1970-07-16
DE1965408B2 (de) 1978-02-16

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years