FR2027429B1 - - Google Patents

Info

Publication number
FR2027429B1
FR2027429B1 FR6944145A FR6944145A FR2027429B1 FR 2027429 B1 FR2027429 B1 FR 2027429B1 FR 6944145 A FR6944145 A FR 6944145A FR 6944145 A FR6944145 A FR 6944145A FR 2027429 B1 FR2027429 B1 FR 2027429B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6944145A
Other versions
FR2027429A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2027429A1 publication Critical patent/FR2027429A1/fr
Application granted granted Critical
Publication of FR2027429B1 publication Critical patent/FR2027429B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Element Separation (AREA)
FR6944145A 1968-12-31 1969-12-19 Expired FR2027429B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78817768A 1968-12-31 1968-12-31

Publications (2)

Publication Number Publication Date
FR2027429A1 FR2027429A1 (fr) 1970-09-25
FR2027429B1 true FR2027429B1 (fr) 1973-08-10

Family

ID=25143680

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6944145A Expired FR2027429B1 (fr) 1968-12-31 1969-12-19

Country Status (4)

Country Link
DE (1) DE1965408C3 (fr)
FR (1) FR2027429B1 (fr)
GB (1) GB1288278A (fr)
NL (1) NL6918388A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
GB1439351A (en) * 1972-06-02 1976-06-16 Texas Instruments Inc Capacitor
US4238275A (en) * 1978-12-29 1980-12-09 International Business Machines Corporation Pyrocatechol-amine-water solution for the determination of defects
JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
JPH0775245B2 (ja) * 1990-11-16 1995-08-09 信越半導体株式会社 誘電体分離基板及びその製造方法
JPH0775244B2 (ja) * 1990-11-16 1995-08-09 信越半導体株式会社 誘電体分離基板及びその製造方法
RU2220449C1 (ru) 2002-12-19 2003-12-27 Акционерное общество закрытого типа "ЛИТЭКС" Способ маркирования изделий с помощью набора меток и метка для маркирования

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
NL144778B (nl) * 1966-12-20 1975-01-15 Western Electric Co Werkwijze voor het vervaardigen van een halfgeleiderinrichting door anisotroop etsen alsmede aldus vervaardigde inrichting.

Also Published As

Publication number Publication date
FR2027429A1 (fr) 1970-09-25
DE1965408B2 (de) 1978-02-16
DE1965408C3 (de) 1979-01-25
GB1288278A (fr) 1972-09-06
DE1965408A1 (de) 1970-07-16
NL6918388A (fr) 1970-07-02

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