GB1286834A - Metallic contact for semi-conductor devices - Google Patents

Metallic contact for semi-conductor devices

Info

Publication number
GB1286834A
GB1286834A GB5184069A GB5184069A GB1286834A GB 1286834 A GB1286834 A GB 1286834A GB 5184069 A GB5184069 A GB 5184069A GB 5184069 A GB5184069 A GB 5184069A GB 1286834 A GB1286834 A GB 1286834A
Authority
GB
United Kingdom
Prior art keywords
layer
aluminium
gold
silver
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5184069A
Other languages
English (en)
Inventor
William Michael Triggs
Carl Joseph Byrns Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1286834A publication Critical patent/GB1286834A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
GB5184069A 1968-11-25 1969-10-22 Metallic contact for semi-conductor devices Expired GB1286834A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77864768A 1968-11-25 1968-11-25

Publications (1)

Publication Number Publication Date
GB1286834A true GB1286834A (en) 1972-08-23

Family

ID=25114010

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5184069A Expired GB1286834A (en) 1968-11-25 1969-10-22 Metallic contact for semi-conductor devices

Country Status (8)

Country Link
US (1) US3599060A (https=)
BE (1) BE740431A (https=)
DE (1) DE1958684A1 (https=)
FR (1) FR2024203A1 (https=)
GB (1) GB1286834A (https=)
IE (1) IE33343B1 (https=)
NL (1) NL6917686A (https=)
SE (1) SE363192B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3011660A1 (de) * 1980-03-26 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Mehrschichtiger ohmscher anschlusskontakt
GB2150754A (en) * 1983-11-30 1985-07-03 Mitsubishi Electric Corp Semiconductor device electrodes
GB2275822A (en) * 1993-03-02 1994-09-07 Samsung Electronics Co Ltd Semiconductor device contact structure

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE763522A (fr) * 1970-03-03 1971-07-16 Licentia Gmbh Serie de couches de contact pour des elements de construction semi-conducteurs
FR2394894A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Dispositif de prise de contact sur un element semiconducteur
US4486945A (en) * 1981-04-21 1984-12-11 Seiichiro Aigoo Method of manufacturing semiconductor device with plated bump
DE3781861T2 (de) * 1986-10-27 1993-04-01 Electric Power Res Inst Herstellung einer mehrschichtigen leistungshalbleiterschaltung mit mehrfachen parallelen kontaktfingern.
US5206186A (en) * 1990-10-26 1993-04-27 General Electric Company Method for forming semiconductor electrical contacts using metal foil and thermocompression bonding
US5184206A (en) * 1990-10-26 1993-02-02 General Electric Company Direct thermocompression bonding for thin electronic power chips
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US5989993A (en) * 1996-02-09 1999-11-23 Elke Zakel Method for galvanic forming of bonding pads
US6115281A (en) * 1997-06-09 2000-09-05 Telcordia Technologies, Inc. Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors
US6737353B2 (en) * 2001-06-19 2004-05-18 Advanced Semiconductor Engineering, Inc. Semiconductor device having bump electrodes
JP2003059860A (ja) * 2001-08-13 2003-02-28 Mitsubishi Electric Corp 半導体装置
US6586043B1 (en) * 2002-01-09 2003-07-01 Micron Technology, Inc. Methods of electroless deposition of nickel, methods of forming under bump metallurgy, and constructions comprising solder bumps
US6825564B2 (en) 2002-08-21 2004-11-30 Micron Technology, Inc. Nickel bonding cap over copper metalized bondpads
JP7075847B2 (ja) * 2018-08-28 2022-05-26 株式会社 日立パワーデバイス 半導体装置および電力変換装置
CN114335197B (zh) * 2022-03-11 2022-08-19 浙江爱旭太阳能科技有限公司 太阳能电池的导电接触结构、组件及发电系统
CN115084312B (zh) * 2022-03-11 2024-07-02 广东爱旭科技有限公司 太阳能电池的制备方法及太阳能电池组件、发电系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1011317A (fr) * 1949-01-17 1952-06-23 Westinghouse Freins & Signaux Perfectionnements aux procédés de fabrication des cellules photo-électriques à couche d'arrêt et produits industriels nouveaux obtenus
GB1053069A (https=) * 1963-06-28
BE670213A (https=) * 1964-09-30 1900-01-01
US3458925A (en) * 1966-01-20 1969-08-05 Ibm Method of forming solder mounds on substrates
US3465211A (en) * 1968-02-01 1969-09-02 Friden Inc Multilayer contact system for semiconductors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3011660A1 (de) * 1980-03-26 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Mehrschichtiger ohmscher anschlusskontakt
GB2150754A (en) * 1983-11-30 1985-07-03 Mitsubishi Electric Corp Semiconductor device electrodes
GB2275822A (en) * 1993-03-02 1994-09-07 Samsung Electronics Co Ltd Semiconductor device contact structure
GB2275822B (en) * 1993-03-02 1997-10-08 Samsung Electronics Co Ltd Semiconductor devices

Also Published As

Publication number Publication date
IE33343B1 (en) 1974-05-29
NL6917686A (https=) 1970-05-27
DE1958684A1 (de) 1970-06-18
IE33343L (en) 1970-05-25
US3599060A (en) 1971-08-10
BE740431A (https=) 1970-04-17
FR2024203A1 (https=) 1970-08-28
SE363192B (https=) 1974-01-07

Similar Documents

Publication Publication Date Title
GB1286834A (en) Metallic contact for semi-conductor devices
US3461357A (en) Multilevel terminal metallurgy for semiconductor devices
US3881884A (en) Method for the formation of corrosion resistant electronic interconnections
GB1290194A (https=)
GB1481015A (en) Bonding of a semiconductor device to an electrical conductor on a supporting substrate
IE33566L (en) Contact formation on semiconductor devices
US3290570A (en) Multilevel expanded metallic contacts for semiconductor devices
GB1457806A (en) Semiconductor device manufacture
GB1321034A (en) Method for making an intermetallic contact to a semiconductor device
GB1198257A (en) Improvements in Methods of Bonding Electrical Conductors
FR2382101A1 (fr) Dispositif a semi-conducteur, comportant des pattes metalliques isolees
GB1288564A (https=)
US3567506A (en) Method for providing a planar transistor with heat-dissipating top base and emitter contacts
GB1359780A (en) Beam-lead semiconductor components
GB1243247A (en) Ohmic contact and electrical interconnection system for electronic devices
GB1148276A (en) Improvements in passive circuit elements
US3669734A (en) Method of making electrical connections to a glass-encapsulated semiconductor device
GB1143506A (en) Method of producing semiconductor devices having connecting leads attached thereto
US3274460A (en) Controlled rectifier comprising a resistive plating interconnecting adjacent n and p layers
US3365628A (en) Metallic contacts for semiconductor devices
GB1269130A (en) Improvements relating to ohmic contacts for semiconductor devices
GB1246414A (en) Diffusion barrier for semiconductor contacts
GB1271121A (en) Method of producing contacts
JPS554904A (en) Semi-conductor device
JPS5645043A (en) Forming method for electrode lead

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee