GB1285049A - Charge storage target and device - Google Patents

Charge storage target and device

Info

Publication number
GB1285049A
GB1285049A GB58491/69A GB5849169A GB1285049A GB 1285049 A GB1285049 A GB 1285049A GB 58491/69 A GB58491/69 A GB 58491/69A GB 5849169 A GB5849169 A GB 5849169A GB 1285049 A GB1285049 A GB 1285049A
Authority
GB
United Kingdom
Prior art keywords
wafer
regions
type
target
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB58491/69A
Other languages
English (en)
Inventor
Eric Frederick Cave
Fred Carl Duigon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1285049A publication Critical patent/GB1285049A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
GB58491/69A 1968-11-29 1969-12-01 Charge storage target and device Expired GB1285049A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77986468A 1968-11-29 1968-11-29

Publications (1)

Publication Number Publication Date
GB1285049A true GB1285049A (en) 1972-08-09

Family

ID=25117814

Family Applications (1)

Application Number Title Priority Date Filing Date
GB58491/69A Expired GB1285049A (en) 1968-11-29 1969-12-01 Charge storage target and device

Country Status (7)

Country Link
US (1) US3548233A (https=)
JP (1) JPS4814609B1 (https=)
DE (1) DE1959889A1 (https=)
FR (1) FR2024514A1 (https=)
GB (1) GB1285049A (https=)
MY (1) MY7300435A (https=)
NL (1) NL6917906A (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6906939A (https=) * 1969-05-06 1970-11-10
JPS4944530B1 (https=) * 1970-01-23 1974-11-28
US3746908A (en) * 1970-08-03 1973-07-17 Gen Electric Solid state light sensitive storage array
US3786294A (en) * 1971-02-22 1974-01-15 Gen Electric Protective coating for diode array targets
US4012660A (en) * 1971-04-05 1977-03-15 Siemens Aktiengesellschaft Signal plate for an electric storage tube of high writing speed
US3765962A (en) * 1971-11-23 1973-10-16 Philips Corp Method of making a charge storage device
JPS4933518A (https=) * 1972-07-26 1974-03-28
US3879631A (en) * 1972-12-14 1975-04-22 Westinghouse Electric Corp Semiconductor target with region adjacent pn junction region shielded
US3786321A (en) * 1973-03-08 1974-01-15 Bell Telephone Labor Inc Color camera tube target having integral indexing structure
US3956662A (en) * 1973-04-30 1976-05-11 Tektronix, Inc. Cathode ray storage tube having a target dielectric provided with particulate segments of collector electrode extending therethrough
US3979629A (en) * 1973-06-01 1976-09-07 Raytheon Company Semiconductor with surface insulator having immobile charges
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
US4004954A (en) * 1976-02-25 1977-01-25 Rca Corporation Method of selective growth of microcrystalline silicon
NL7607095A (nl) * 1976-06-29 1978-01-02 Philips Nv Trefplaatmontage voor een opneembuis, en werkwijze voor de vervaardiging daarvan.
US4232245A (en) * 1977-10-03 1980-11-04 Rca Corporation Reduced blooming devices
US4389591A (en) * 1978-02-08 1983-06-21 Matsushita Electric Industrial Company, Limited Image storage target and image pick-up and storage tube
JPS5530083U (https=) * 1978-08-18 1980-02-27
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target
DE2909956A1 (de) * 1979-03-14 1980-09-18 Licentia Gmbh Halbleiter-glas-verbundwerkstoff
US4228446A (en) * 1979-05-10 1980-10-14 Rca Corporation Reduced blooming device having enhanced quantum efficiency
NL8003608A (nl) * 1980-06-23 1982-01-18 Philips Nv Kleurenbeeldbuis.
NL8003906A (nl) * 1980-07-07 1982-02-01 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
US4547957A (en) * 1982-06-11 1985-10-22 Rca Corporation Imaging device having improved high temperature performance
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3011089A (en) * 1958-04-16 1961-11-28 Bell Telephone Labor Inc Solid state light sensitive storage device
US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array
US3419746A (en) * 1967-05-25 1968-12-31 Bell Telephone Labor Inc Light sensitive storage device including diode array
US3440477A (en) * 1967-10-18 1969-04-22 Bell Telephone Labor Inc Multiple readout electron beam device

Also Published As

Publication number Publication date
NL6917906A (https=) 1970-06-02
DE1959889A1 (de) 1970-06-18
JPS4814609B1 (https=) 1973-05-09
FR2024514A1 (https=) 1970-08-28
MY7300435A (en) 1973-12-31
US3548233A (en) 1970-12-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee