NL6917906A - - Google Patents

Info

Publication number
NL6917906A
NL6917906A NL6917906A NL6917906A NL6917906A NL 6917906 A NL6917906 A NL 6917906A NL 6917906 A NL6917906 A NL 6917906A NL 6917906 A NL6917906 A NL 6917906A NL 6917906 A NL6917906 A NL 6917906A
Authority
NL
Netherlands
Application number
NL6917906A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6917906A publication Critical patent/NL6917906A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/026Deposition thru hole in mask
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
NL6917906A 1968-11-29 1969-11-28 NL6917906A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77986468A 1968-11-29 1968-11-29

Publications (1)

Publication Number Publication Date
NL6917906A true NL6917906A (https=) 1970-06-02

Family

ID=25117814

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6917906A NL6917906A (https=) 1968-11-29 1969-11-28

Country Status (7)

Country Link
US (1) US3548233A (https=)
JP (1) JPS4814609B1 (https=)
DE (1) DE1959889A1 (https=)
FR (1) FR2024514A1 (https=)
GB (1) GB1285049A (https=)
MY (1) MY7300435A (https=)
NL (1) NL6917906A (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6906939A (https=) * 1969-05-06 1970-11-10
JPS4944530B1 (https=) * 1970-01-23 1974-11-28
US3746908A (en) * 1970-08-03 1973-07-17 Gen Electric Solid state light sensitive storage array
US3786294A (en) * 1971-02-22 1974-01-15 Gen Electric Protective coating for diode array targets
US4012660A (en) * 1971-04-05 1977-03-15 Siemens Aktiengesellschaft Signal plate for an electric storage tube of high writing speed
US3765962A (en) * 1971-11-23 1973-10-16 Philips Corp Method of making a charge storage device
JPS4933518A (https=) * 1972-07-26 1974-03-28
US3879631A (en) * 1972-12-14 1975-04-22 Westinghouse Electric Corp Semiconductor target with region adjacent pn junction region shielded
US3786321A (en) * 1973-03-08 1974-01-15 Bell Telephone Labor Inc Color camera tube target having integral indexing structure
US3956662A (en) * 1973-04-30 1976-05-11 Tektronix, Inc. Cathode ray storage tube having a target dielectric provided with particulate segments of collector electrode extending therethrough
US3979629A (en) * 1973-06-01 1976-09-07 Raytheon Company Semiconductor with surface insulator having immobile charges
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
US4004954A (en) * 1976-02-25 1977-01-25 Rca Corporation Method of selective growth of microcrystalline silicon
NL7607095A (nl) * 1976-06-29 1978-01-02 Philips Nv Trefplaatmontage voor een opneembuis, en werkwijze voor de vervaardiging daarvan.
US4232245A (en) * 1977-10-03 1980-11-04 Rca Corporation Reduced blooming devices
US4389591A (en) * 1978-02-08 1983-06-21 Matsushita Electric Industrial Company, Limited Image storage target and image pick-up and storage tube
JPS5530083U (https=) * 1978-08-18 1980-02-27
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target
DE2909956A1 (de) * 1979-03-14 1980-09-18 Licentia Gmbh Halbleiter-glas-verbundwerkstoff
US4228446A (en) * 1979-05-10 1980-10-14 Rca Corporation Reduced blooming device having enhanced quantum efficiency
NL8003608A (nl) * 1980-06-23 1982-01-18 Philips Nv Kleurenbeeldbuis.
NL8003906A (nl) * 1980-07-07 1982-02-01 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
US4547957A (en) * 1982-06-11 1985-10-22 Rca Corporation Imaging device having improved high temperature performance
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3011089A (en) * 1958-04-16 1961-11-28 Bell Telephone Labor Inc Solid state light sensitive storage device
US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array
US3419746A (en) * 1967-05-25 1968-12-31 Bell Telephone Labor Inc Light sensitive storage device including diode array
US3440477A (en) * 1967-10-18 1969-04-22 Bell Telephone Labor Inc Multiple readout electron beam device

Also Published As

Publication number Publication date
DE1959889A1 (de) 1970-06-18
JPS4814609B1 (https=) 1973-05-09
GB1285049A (en) 1972-08-09
FR2024514A1 (https=) 1970-08-28
MY7300435A (en) 1973-12-31
US3548233A (en) 1970-12-15

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Legal Events

Date Code Title Description
BN A decision not to publish the application has become irrevocable