GB1285050A - Charge storage target and devices - Google Patents

Charge storage target and devices

Info

Publication number
GB1285050A
GB1285050A GB5849269A GB5849269A GB1285050A GB 1285050 A GB1285050 A GB 1285050A GB 5849269 A GB5849269 A GB 5849269A GB 5849269 A GB5849269 A GB 5849269A GB 1285050 A GB1285050 A GB 1285050A
Authority
GB
United Kingdom
Prior art keywords
regions
wafer
excess
ions
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5849269A
Inventor
Frederic Paul Heiman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1285050A publication Critical patent/GB1285050A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

1285050 Image pick up tubes; semi-conductor devices RCA CORPORATION 1 Dec 1969 [29 Nov 1968] 58492/69 Headings HID and H1K A charge storage target comprises a semiconductor wafer 20 of one conductivity, an array of discrete regions 22 in the wafer of a second conductivity and, covering the wafer surface between the regions, a layer of insulating material 24 containing an excess concentration of non-mobile ions. The ions counter-act the effects in the wafer of an electrostatic field resulting from charge formed on the insulating surface by reading means. A Si photodiode target for a vidicon tube comprises a monocrystalline P doped N-type bulk region 20, an array of B doped P-type regions 22 and an insulating layer 24 of SiO 2 having an excess of positive oxide ions 25 formed by baking the target in oxygen during the diffusion of B to form the regions 22. If used in the secondary emission mode an excess of negative non-mobile ions is provided. The layer 24 may be Al 2 O 3 or Si 3 N 4 but it is not continuous. Specification 1,285,049 is referred to.
GB5849269A 1968-11-29 1969-12-01 Charge storage target and devices Expired GB1285050A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78011668A 1968-11-29 1968-11-29
US78016668A 1968-11-29 1968-11-29

Publications (1)

Publication Number Publication Date
GB1285050A true GB1285050A (en) 1972-08-09

Family

ID=27119667

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5849269A Expired GB1285050A (en) 1968-11-29 1969-12-01 Charge storage target and devices

Country Status (4)

Country Link
DE (1) DE1959888A1 (en)
FR (1) FR2024513A1 (en)
GB (1) GB1285050A (en)
NL (1) NL162782C (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1025034A (en) * 1973-06-01 1978-01-24 Herman Statz Semiconductor devices with isolation between adjacent regions and method of manufacture

Also Published As

Publication number Publication date
NL162782B (en) 1980-01-15
DE1959888A1 (en) 1970-06-18
FR2024513A1 (en) 1970-08-28
NL6917929A (en) 1970-06-02
NL162782C (en) 1980-06-16

Similar Documents

Publication Publication Date Title
GB1285049A (en) Charge storage target and device
GB1050478A (en)
JPS6446980A (en) Semiconductor device
GB1241379A (en) Improvements in or relating to target structures for cathode ray tubes
JPS6489365A (en) Semiconductor device
US3676727A (en) Diode-array target including isolating low resistivity regions
US3919555A (en) Direct view infra-red to visible light converter
JPS6464355A (en) Solid-state image sensing device and its manufacture
JPS61252661A (en) Photoelectric conversion device
GB1298866A (en) Camera tube and target plate therefor
US4232245A (en) Reduced blooming devices
GB983266A (en) Semiconductor switching devices
GB1285050A (en) Charge storage target and devices
GB1153949A (en) Improvements in and relating to Image Transducing Tube
JPS5649554A (en) Manufacture of semiconductor memory
USRE28500E (en) Low noise field effect transistor with channel having subsurface portion of high conductivity
GB1277039A (en) Image storage apparatus
GB1239255A (en)
JPS5512754A (en) Semiconductor device manufacturing method
JPS55105367A (en) Semiconductor device
JPS5670675A (en) Manufacture of photoelectric converter
US3988758A (en) Semiconductor camera-tube target
GB1181345A (en) Thin Film Active Elements
JPS54111287A (en) Resin seal planar-structure semiconductor element
GB1413015A (en) Television camera tube target construction

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee