GB1277039A - Image storage apparatus - Google Patents

Image storage apparatus

Info

Publication number
GB1277039A
GB1277039A GB34598/69A GB3459869A GB1277039A GB 1277039 A GB1277039 A GB 1277039A GB 34598/69 A GB34598/69 A GB 34598/69A GB 3459869 A GB3459869 A GB 3459869A GB 1277039 A GB1277039 A GB 1277039A
Authority
GB
United Kingdom
Prior art keywords
layer
target
sheet
depletion layers
persistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB34598/69A
Inventor
Samuel Ray Shortes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1277039A publication Critical patent/GB1277039A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00—Television systems
    • H04N7/01—Conversion of standards, e.g. involving analogue television standards or digital television standards processed at pixel level
    • H04N7/0105—Conversion of standards, e.g. involving analogue television standards or digital television standards processed at pixel level using a storage device with different write and read speed
    • H04N7/0107—Conversion of standards, e.g. involving analogue television standards or digital television standards processed at pixel level using a storage device with different write and read speed using beam gun storage
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G1/00—Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators; General aspects or details, e.g. selection emphasis on particular characters, dashed line or dotted line generation; Preprocessing of data
    • G09G1/06—Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators; General aspects or details, e.g. selection emphasis on particular characters, dashed line or dotted line generation; Preprocessing of data using single beam tubes, e.g. three-dimensional or perspective representation, rotation or translation of display pattern, hidden lines, shadows
    • G09G1/14—Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators; General aspects or details, e.g. selection emphasis on particular characters, dashed line or dotted line generation; Preprocessing of data using single beam tubes, e.g. three-dimensional or perspective representation, rotation or translation of display pattern, hidden lines, shadows the beam tracing a pattern independent of the information to be displayed, this latter determining the parts of the pattern rendered respectively visible and invisible
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/23—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/58—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output
    • H01J31/60—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output having means for deflecting, either selectively or sequentially, an electron ray on to separate surface elements of the screen
    • H01J31/62—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output having means for deflecting, either selectively or sequentially, an electron ray on to separate surface elements of the screen with separate reading and writing rays
    • H01J31/64—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output having means for deflecting, either selectively or sequentially, an electron ray on to separate surface elements of the screen with separate reading and writing rays on opposite sides of screen, e.g. for conversion of definition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Multimedia (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measurement Of Radiation (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

1277039 Cathode ray storage tubes; semiconductor targets TEXAS INSTRUMENTS Inc 9 July 1969 [9 Sept 1968] 34598/69 Headings H1D and H1K An image storage device, in particular a scan converter, has a target 22 comprising a sheet of semi-conductor material 34, e.g. N-type silicon, with a layer of insulating material 36, e.g. silicon oxide, on one surface having a number of discrete areas 38 of reduced thickness, such that when this insulating surface is scanned by an electron beam discrete depletion layers 46 are formed in the sheet 34 in correspondence to the reduced thickness portions 38. In a scan converter the target is disposed between the opposed write and read electron guns and the read gun is initially scanned to produce the uniform depletion layers 46. An intensity modulated electron beam from the write gun incident on the opposite face of sheet 34 produces electron-hole pairs which migrate to the depletion layers 46 to selectively alter the charge condition thereof. When scanned once more by the read beam 44 an alternating output signal detected by sensor 40 is produced by the target, where value is dependent on the amount of charge required to restore the depletion layers to their original state. A phosphor layer 50 may be provided on the write gun side of sheet 34 to increase the persistance of the image storage of the device. As shown in Fig. 8 in particular for radar screens in which a circular scan may be converted to a horizontal one, a low energy beam 52 is used to produce a persistant image, and a high energy beam 54 which penetrates the phosphor layer 50 produces a non-persistant image which can be used to tag the persistant images. The insulating layer 36 may be formed by growing a uniform oxide layer over a silicon wafer, etching holes in the oxide representing the discrete areas 38 and then growing a relatively thin second oxide layer to cover the bottom of the holes. A layer of metal film may in addition be formed over the areas 38 giving a device similar to an MOS device. Also the thicker regions of oxide layer 36 may be doped to prevent charging of areas below these regions. The thickness of the target 22 may be in the micron range.
GB34598/69A 1968-09-09 1969-07-09 Image storage apparatus Expired GB1277039A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75852668A 1968-09-09 1968-09-09

Publications (1)

Publication Number Publication Date
GB1277039A true GB1277039A (en) 1972-06-07

Family

ID=25052055

Family Applications (1)

Application Number Title Priority Date Filing Date
GB34598/69A Expired GB1277039A (en) 1968-09-09 1969-07-09 Image storage apparatus

Country Status (5)

Country Link
US (1) US3541384A (en)
DE (1) DE1945184A1 (en)
FR (1) FR2017609A1 (en)
GB (1) GB1277039A (en)
NL (1) NL6913699A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490643A (en) * 1969-01-08 1984-12-25 Rca Corporation Storage device having a semiconductor target
FR2086723A5 (en) * 1970-04-07 1971-12-31 Sescosem
US3748585A (en) * 1971-11-15 1973-07-24 Tektronix Inc Silicon diode array scan converter storage tube and method of operation
US3892454A (en) * 1972-06-28 1975-07-01 Raytheon Co Method of forming silicon storage target
DE4038171C1 (en) * 1990-11-30 1992-02-20 Rolf, Christa, 4834 Harsewinkel, De Pallets for handling cartons - have L=shaped cornea uprights slotted and bent to form support tangs

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array
US3440476A (en) * 1967-06-12 1969-04-22 Bell Telephone Labor Inc Electron beam storage device employing hole multiplication and diffusion
US3440477A (en) * 1967-10-18 1969-04-22 Bell Telephone Labor Inc Multiple readout electron beam device

Also Published As

Publication number Publication date
NL6913699A (en) 1970-03-11
DE1945184A1 (en) 1970-03-19
FR2017609A1 (en) 1970-05-22
US3541384A (en) 1970-11-17

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed