GB1273181A - Capacitor charge transferring arragements and circuits - Google Patents

Capacitor charge transferring arragements and circuits

Info

Publication number
GB1273181A
GB1273181A GB20475/69A GB2047569A GB1273181A GB 1273181 A GB1273181 A GB 1273181A GB 20475/69 A GB20475/69 A GB 20475/69A GB 2047569 A GB2047569 A GB 2047569A GB 1273181 A GB1273181 A GB 1273181A
Authority
GB
United Kingdom
Prior art keywords
capacitor
charge
capacitors
source
transferred
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20475/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB59968/71A priority Critical patent/GB1273182A/en
Publication of GB1273181A publication Critical patent/GB1273181A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/476—Three-phase CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Networks Using Active Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB20475/69A 1968-04-23 1969-04-22 Capacitor charge transferring arragements and circuits Expired GB1273181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB59968/71A GB1273182A (en) 1968-04-23 1969-04-22 Improvements in and relating to charge transferring devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE6805705,A NL174503C (nl) 1968-04-23 1968-04-23 Inrichting voor het overhevelen van lading.

Publications (1)

Publication Number Publication Date
GB1273181A true GB1273181A (en) 1972-05-03

Family

ID=19803413

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20475/69A Expired GB1273181A (en) 1968-04-23 1969-04-22 Capacitor charge transferring arragements and circuits

Country Status (12)

Country Link
JP (2) JPS4817779B1 (enExample)
AT (1) AT301907B (enExample)
BE (1) BE731897A (enExample)
BR (1) BR6908247D0 (enExample)
CH (1) CH505506A (enExample)
DE (1) DE1920077C2 (enExample)
DK (1) DK135253B (enExample)
ES (2) ES366284A1 (enExample)
FR (1) FR2010994A1 (enExample)
GB (1) GB1273181A (enExample)
NL (2) NL174503C (enExample)
SE (2) SE429797B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2359720A1 (de) * 1972-12-01 1974-06-06 Philips Nv Halbleiteranordnung

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3789240A (en) * 1970-10-26 1974-01-29 Rca Corp Bucket brigade scanning of sensor array
US3825995A (en) * 1972-10-10 1974-07-30 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
US3790825A (en) * 1972-10-10 1974-02-05 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
US3784847A (en) * 1972-10-10 1974-01-08 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
US3825996A (en) * 1972-10-10 1974-07-30 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
JPS5936402U (ja) * 1982-08-31 1984-03-07 満企業株式会社 缶詰用加熱台
JPS5936401U (ja) * 1982-08-31 1984-03-07 満企業株式会社 コンロ付き缶詰
JPS5975602U (ja) * 1982-11-12 1984-05-22 井上　定夫 携帯用こん炉付容器
JPS60119333U (ja) * 1984-01-23 1985-08-12 株式会社　八木商店 コツヘル等の火台
DE3546745C2 (de) * 1984-05-30 1994-06-30 Toshiba Kawasaki Kk Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation
US4672407A (en) 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS61252433A (ja) * 1985-05-02 1986-11-10 Mitsutaka Uto 携帯簡易コンロ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3289010A (en) 1963-11-21 1966-11-29 Burroughs Corp Shift register
FR1430601A (fr) 1964-05-08 1966-03-04 Gen Micro Electronics Inc Dispositif de mémoire
DE1474510B2 (de) 1965-12-14 1971-11-25 Siemens AG, 1000 Berlin u. 8000 München Durch schiebeimpulse gesteuerte schieberegister insbesondere fuer zeitmultiplex systeme

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2359720A1 (de) * 1972-12-01 1974-06-06 Philips Nv Halbleiteranordnung

Also Published As

Publication number Publication date
AT301907B (de) 1972-09-25
SE7605172L (sv) 1976-05-06
ES386995A1 (es) 1973-04-16
NL164158C (nl) 1980-11-17
SE440420B (sv) 1985-07-29
JPS4830171B1 (enExample) 1973-09-18
NL174503B (nl) 1984-01-16
NL6805705A (enExample) 1969-10-27
NL164158B (nl) 1980-06-16
SE429797B (sv) 1983-09-26
DE1920077C2 (de) 1984-11-29
BR6908247D0 (pt) 1973-05-31
DE1920077A1 (de) 1969-11-06
FR2010994A1 (enExample) 1970-02-27
CH505506A (de) 1971-03-31
DK135253C (enExample) 1977-08-29
JPS4817779B1 (enExample) 1973-05-31
BE731897A (enExample) 1969-10-22
DK135253B (da) 1977-03-21
ES366284A1 (es) 1971-05-01
NL6904620A (enExample) 1969-10-27
NL174503C (nl) 1984-06-18

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]