GB1263009A - A method for manufacturing a semiconductor device and such device prepared thereby - Google Patents

A method for manufacturing a semiconductor device and such device prepared thereby

Info

Publication number
GB1263009A
GB1263009A GB05039/70A GB1503970A GB1263009A GB 1263009 A GB1263009 A GB 1263009A GB 05039/70 A GB05039/70 A GB 05039/70A GB 1503970 A GB1503970 A GB 1503970A GB 1263009 A GB1263009 A GB 1263009A
Authority
GB
United Kingdom
Prior art keywords
region
emitter
base
diffused
base contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB05039/70A
Other languages
English (en)
Inventor
Koichi Fujinuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1263009A publication Critical patent/GB1263009A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Bipolar Transistors (AREA)
GB05039/70A 1969-03-31 1970-03-31 A method for manufacturing a semiconductor device and such device prepared thereby Expired GB1263009A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2450069 1969-03-31

Publications (1)

Publication Number Publication Date
GB1263009A true GB1263009A (en) 1972-02-09

Family

ID=12139891

Family Applications (1)

Application Number Title Priority Date Filing Date
GB05039/70A Expired GB1263009A (en) 1969-03-31 1970-03-31 A method for manufacturing a semiconductor device and such device prepared thereby

Country Status (4)

Country Link
DE (1) DE2015333A1 (enrdf_load_stackoverflow)
FR (1) FR2059999B1 (enrdf_load_stackoverflow)
GB (1) GB1263009A (enrdf_load_stackoverflow)
NL (1) NL7004507A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE759667A (fr) * 1969-12-01 1971-06-01 Philips Nv Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514807B2 (de) * 1964-04-15 1971-09-02 Texas Instruments Inc., Dallas. Tex. (V.St.A.) Verfahren zum herstellen einer planaren halbleiteranordnung
FR1487974A (fr) * 1965-07-30 1967-07-07 Philips Nv Transistors
GB1228754A (enrdf_load_stackoverflow) * 1967-05-26 1971-04-21

Also Published As

Publication number Publication date
DE2015333A1 (enrdf_load_stackoverflow) 1970-10-08
FR2059999B1 (enrdf_load_stackoverflow) 1976-03-19
NL7004507A (enrdf_load_stackoverflow) 1970-10-02
FR2059999A1 (enrdf_load_stackoverflow) 1971-06-11

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